SD-43879-021
Abstract: la 4620 ic 43879-0023 43879-0051
Text: 10 ±0.50 l.83±0.08 .072± .003 CKT DIA 4 FINISHED HOLE DIA I.984 ±0.03 A .07 8 I ±.00 I DRILLED HOLE DIA 6 8 r S W E IS IE T i S ä B ö e ö IO /ilS ïïs ! 0.05± 0.03 0 .0 0 7 6 .002± .00 I COPPER THICKNESS C IR C U IT •LAST C IR C U IT 'C IR C U IT
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SD-4-3879-021
SD-43879-021
la 4620 ic
43879-0023
43879-0051
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LT015
Abstract: LT023MC IR3C01 lt023 IR2C02 sharp lt024 sharp lt015 lt024 ir3c02a LT015 LASER
Text: Driver 1C Laser Diodes Driver 1C Sharp manufactures a series of driver ICs IR3C01/R3C01/R3C01N, IR 3C 02A/IR 2C02AN for use as laser diode APC circuits. Using these ICs, the power ou tp u t of the laser is easily adjusted by means of an external resistance.
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IR3C01/R3C01/R3C01N,
IR3C02A/IR2C02AN)
IR3C01
/IR3C01N,
IR3C02A/IR3C02AN
/IR3C01N
IR3C02A/IR3C02AN
0014MG1
01flD7cifl
LT015
LT023MC
lt023
IR2C02
sharp lt024
sharp lt015
lt024
ir3c02a
LT015 LASER
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444-284
Abstract: 1606a SD-4303
Text: 44 4 2 8 C IR C U IT S IZE LAST 04 .512 13.00 06 .630 16.00 236 .748 19.00 .354 9.00 . 184 4.68 .866 22.00 .472 12.00 7.68 .984 2 5 .0 0 .590 15.00 .420 10.68 .539 NA 3 .0 0 CIRCUIT T E R M IN A L P O S I T IO N I N G STRIP C IR C U IT CIRCUIT «2 14.43 3.0O
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UL94V-0
SD-44428-0
444-284
1606a
SD-4303
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Untitled
Abstract: No abstract text available
Text: Housing Model Nc. C ir c uits Q -•/1 hag D menstons mm<n. Standard type Retainer mountable 2 XAP-Q2Y-1 XARP-02V 3 XAP-Q3Y-1 XARP-03V 5.0 .197] 4 XAP-04V-1 X ARP-04V 7.5{ .295] 5 XAP-05V-1 XARP-05V 6 XAP-06V-1 XARP-06V 7 XAP-07V-1 XARP-07V F=sr=r S'j'd ir:
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08BNO
Abstract: 44428-0601 44428-1206
Text: 10 12 13 C IR C U IT S IZ E 04 LAST T E R M IN A L CIRCUIT P O S IT IO N IN G - S T R IP 06 10 C IR C U IT 13.00 3 .0 0 .6 3 0 .236 16.00 6 .0 0 NA NA .748 .354 .184 19.00 9 .0 0 4.6 8 .8 6 6 .472 .3 0 2 2 2 .0 0 12.00 7.68 .984 .5 9 0 .4 2 0 2 5 .0 0 15.00
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UC94V-0
SD-44428-001
08BNO
44428-0601
44428-1206
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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PDF
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Untitled
Abstract: No abstract text available
Text: 13 12 10 44432 CIRCUIT SIZE “A* 04 06 L A S T CIRCUIT .118 3 .0 0 08 10 J> I- i t •A■ .4 6 9 11.90 12 .118 3 .0 0 14 16 18 -C IR C U IT t*1 ill -C IR C U IT « 2 20 22 24 .457 C "A' 'B" .512 .118 .472 13.00 3 .0 0 12.00 .6 3 0 .236 .5 9 0 16.00 6 .0 0
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SD-44432-001
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Xa2 TRANSISTOR
Abstract: No abstract text available
Text: ü iff« m l C l T * w * * / S w -ir», t n t - * . * 6 f l l I xòyTictv *x>k*$? * 140 Commerce Drive Wlontgomeryviiie, PA 18936-1013 Tei; 215 631-9840 2N5944 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS CLASS C TRANSISTOR FREQUENCY
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2N5944
450-512MHz
470MHz
470MHÃ
Xa2 TRANSISTOR
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660 880 940 led
Abstract: KED541H
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi-wavelength LED KED541H Features •Red and IR emitters in a single package •Sharp directivity with a glass lens •Highly reliable hermetic seal •Direct modulation Dimensions (unit: mm)
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2002/95/EC)
KED541H
0905/KED541H)
660 880 940 led
KED541H
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Untitled
Abstract: No abstract text available
Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs Open Mode Design, X7R Dielectric, 16VDC-200VDC (Commercial & Automotive Grade) Overview KEMET’s Ceramic Open Mode capacitor in X7R dielectric is designed to significantly minimize the probability of a low IR or
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16VDC-200VDC
littl279-757201
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23AT29-S
Abstract: No abstract text available
Text: MICRO SWITCH FREEPORT IL L IN O IS . U S A A D IV IS IO N OF HO NEYW ELL PCD. H r « . COOK CATALOG 2 3A T29-S ASSEMBLYTO G GLE SWITCH -N .C .T O C .C IR C U IT S MADE LISTING A L L SW ITC H ES (M A IN T A IN E D PO SITIO N ) -N .O . TO C. C IR C U ITS M ADE (A L L S W IT C H E S )( M A IN T A IN E D P O S IT IO N )
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23AT29-S
INRUSH--------24
23AT29-S
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iec384-142 ul-1414
Abstract: No abstract text available
Text: I 158X Series — Type X2 Suppressor Capacitors MallorY Metallized Polyester / Radial Leads . . • Insulation Resistance IR (@ 500 VDC and 20°C) Terminal to Terminal: 50.33/uF 15,000 MO min >0.47/xF 5,000 MO x /xF min Both Terminals to Body:
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33/uF
47/xF
275VAC
100kHz
Company/7545
46214-3073/Phone:
273-0090/Fax:
273-2400/www
UL-1414
UL94V-0
iec384-142 ul-1414
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MALLORY polyester capacitors
Abstract: 132400 EI 1614 158X225 MALLORY 150 M CAPACITORS IEC384-14 II
Text: 158X Series — Type X2 Suppressor Capacitors Metallized Polyester / Radial Leads GENERAL . SPECIFICATIONS Insulation Resistance IR (@ 500 VDC and 20gC) Terminal to Terminal: ͨ0.33ȐF 15,000 M⏲ min ͧ0.47ȐF 5,000 M⏲ x ȐF min Both Terminals to Body:
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UL94V0
-40gC
100gC
275VAC
CDE/6325
46278/Phone:
275-2285/Fax:
275-2293/www
MALLORY polyester capacitors
132400
EI 1614
158X225
MALLORY 150 M CAPACITORS
IEC384-14 II
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CAP SMD 0.47uF 50V 10 CERAMIC X7R 0805
Abstract: No abstract text available
Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs Open Mode Design, X7R Dielectric, 16VDC-200VDC (Commercial & Automotive Grade) Overview KEMET’s Ceramic Open Mode capacitor in X7R dielectric is designed to significantly minimize the probability of a low IR or
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16VDC-200VDC
littl4-1279-757201
C1012-2
CAP SMD 0.47uF 50V 10 CERAMIC X7R 0805
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E280
Abstract: wt 24 ir 2000 E480 F280
Text: WT 260 Long Highlights Proximity/Diffuse Sensors-Energetic • Rugged plastic housing IR DC • Terminal chamber for connection flexibility • Adjustable sensitivity • Easy mounting with included bracket • Test input 0.4.82.7 in 70.2100 mm R sensing range
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L080TR4B
Abstract: L080CWR3K L080TG4B L080CWAG3K L080CWE3K L080CWG5B L080CWO3K L080CWPB1K L080CWPG5B L080CWR5B
Text: 2mm Axial SurfLED SMT LEDs Features Applications • Small Size and Low Profile • Compatible With Automatic Placement Equipment • Ideal for High Density Mounting • Compatible With IR and Vapor Phase • Industry Standard Footprint Reflow Solder Processes
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L080CWR3K
L080CWL080CWG5B-012
L080TR4B
L080CWR3K
L080TG4B
L080CWAG3K
L080CWE3K
L080CWG5B
L080CWO3K
L080CWPB1K
L080CWPG5B
L080CWR5B
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0201 land pattern
Abstract: EC Z 22uf RH 16V
Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs Open Mode Design (FO-CAP), X7R Dielectric, 16VDC-200VDC (Commercial & Automotive Grade) Overview KEMET’s Ceramic Open Mode capacitor in X7R dielectric is designed to significantly minimize the probability of a low IR or
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16VDC-200VDC
0201 land pattern
EC Z 22uf RH 16V
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EK 02
Abstract: smd marking gb
Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs Open Mode Design (FO-CAP), X7R Dielectric, 16VDC-200VDC (Commercial & Automotive Grade) Overview KEMET’s Ceramic Open Mode capacitor in X7R dielectric is designed to significantly minimize the probability of a low IR or
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16VDC-200VDC
EK 02
smd marking gb
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2N5590
Abstract: 2N5591 2N5581 2N5589
Text: ^ jg m R ^ PmdMts M ìc r o 140 C o m m e rc e Drive s e m i Ptofttsta-sîSs-wkhkîijy T5e£ijrwte>j¥ M o n tg o m eryvilie , PA 18936. Tei: 215 631-9840 /« » ir - r - # * .« 2 N5590/2N55Ô1 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS
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N5590/2N55
230MHz
175MHz
TG25W
SD1212
SD1214-12
2N5589
2N5590
2N5581
8D121ß
2N5590
2N5591
2N5581
2N5589
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ,- LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. COPYRIGHT - REVISIONS DIST D LTR DESCRIPTION A RELEASED DATE DWN APVD 01 MAR07 HH WK 0.15 + 0.15 o •0.15 NO. C IR CUIT 1 SIDE 7o - +o 0.10
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MAR07
MAR2007
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diode MARKING 30J
Abstract: IRFP264 IRFP264E A1W diode
Text: PD-9.756 International irâRi Rectifier IRFP264 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 250V ^DS on _ 0 .0 7 5 Q
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IRFP264
O-247
T0-220
O-218
diode MARKING 30J
IRFP264
IRFP264E
A1W diode
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PDF
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IRFP60A
Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
Text: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes
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O-220
Q101-Compliant
IRFP60A
40A 45V to-220 Schottky
IRF7210
ir*c30ud
IRFB9N65
2CWQ03FN
IR 200V P-Channel fets
IRFIB7N50A CONVERTER
IRG4IBC10UD
876-1413
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PDF
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Untitled
Abstract: No abstract text available
Text: 5.0" 5 x 8 Dot M a trix Display FEATURES • 5.0" 5x8 dot matrix ■ Choice of four colors/materials OPTO-ELECTRICAL CHARACTERISTICS Ta = 25°C PART NO. EMITTED COLOR (nm ) MAXIMUM RATINGS OPTO-ELECTRICAL CHARACTERISTICS IR(pA) vm SURFACE COLOR EPOXY COLOR
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MTAN4146-AO
TAN4146-AHR
98-4LEDS
MTAN2146-AG
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