Untitled
Abstract: No abstract text available
Text: QBED8160 5mm IR Lamp - QT-Brightek Lamp Series 5mm IR Lamp LED Part No.: QBED8160 Product: QBED8160 Date: March 27, 2014 Version# 1.0
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QBED8160
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Untitled
Abstract: No abstract text available
Text: QBED8340 5mm IR Lamp - QT-Brightek Lamp Series 5mm IR Lamp LED Part No.: QBED8340 Product: QBED8340 Date: March 27, 2014 Version# 1.0
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QBED8340
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5mm ir receiver
Abstract: IR 5MM receiver
Text: QBED8120 5mm IR Lamp - QT-Brightek Lamp Series 5mm IR Lamp LED Part No.: QBED8120 Product: QBED8120 Date: March 27, 2014 Version# 1.1
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QBED8120
5mm ir receiver
IR 5MM receiver
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silicon carbide
Abstract: gallium nitride nitride led 5mm 2000mcd ultraviolet led 5mm silicon carbide LED IR941 3000mcd
Text: Color Chart 44 Color Name Intensity Fwd Voltage Vf @ 20mA 5mm LEDs Viewing Angle LED Dye Material 941 IR IR941 940 Infrared 1.5 16mW @ 50mA 15° 881 IR IR881 880 Infrared 1.7 18mW @ 50mA 15° 851 IR IR851 850 Infrared 1.7 26mW @ 50mA 15° 0UR R3KF 660 Ultra Red
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IR941
IR881
IR851
PG350
AG10K
UB500
UV405
UV395
UV750
4500K
silicon carbide
gallium nitride
nitride
led 5mm 2000mcd
ultraviolet led 5mm
silicon carbide LED
3000mcd
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3MM LED
Abstract: IR detector transistor 551 IR LED array nj TRANSISTOR green LED 3mm low 3mm "ir led" diode led ir 3mm photo diode LED 3mm 2ma
Text: Selector Guide: 3mm IR and L E D Products DESCRIPTION DATA SHEET PAGE s 3mm IR Detector Infra Red Emitter 551-7110 4-7 3mm IR Detector Photo Transistor 551-7610 4-8 3mm IR Detector Photo Diode 551-7710 4-9 551-XX01 4-10 & 4-11 551-XX02 4-12 3mm LED CBI (DIN 41494 compatible)
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551-XX01
551-XX02
551-xx03
3MM LED
IR detector
transistor 551
IR LED array
nj TRANSISTOR
green LED 3mm low
3mm "ir led"
diode led ir
3mm photo diode
LED 3mm 2ma
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Untitled
Abstract: No abstract text available
Text: Infrared LED Product No: M T51060-IR Peak Emission Wavelength: 1060nm The MT51060-IR is an infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed packaged with the lens optimized to produce a narrow viewing angle.
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T51060-IR
1060nm
MT51060-IR
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Untitled
Abstract: No abstract text available
Text: Infrared LED Product No: MT5880-IR Peak Emission Wavelength: 880nm The MT5880-IR is an infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed packaged with the lens optimized to produce a narrow viewing angle. FEATURES
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MT5880-IR
880nm
MT5880-IR
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Untitled
Abstract: No abstract text available
Text: Infrared LED Product No: M T51720-IR Peak Emission Wavelength: 1720nm The MT51720-IR is an infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed packaged with the lens optimized to produce a narrow viewing angle.
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T51720-IR
1720nm
MT51720-IR
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Untitled
Abstract: No abstract text available
Text: Infrared LED Product No: M T51550-IR Peak Emission Wavelength: 1550nm The MT51550-IR is an infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed packaged with the lens optimized to produce a narrow viewing angle.
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T51550-IR
1550nm
MT51550-IR
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Untitled
Abstract: No abstract text available
Text: Infrared LED Product No: M T51300-IR Peak Emission Wavelength: 1300nm The MT51300-IR is an infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed packaged with the lens optimized to produce a narrow viewing angle.
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T51300-IR
1300nm
MT51300-IR
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Untitled
Abstract: No abstract text available
Text: Infrared LED Product No: MT5850-IR Peak Emission Wavelength: 850nm The MT5850-IR is an infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed packaged with the lens optimized to produce a narrow viewing angle. FEATURES
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MT5850-IR
850nm
MT5850-IR
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Untitled
Abstract: No abstract text available
Text: Infrared LED Product No: MT5900-IR Peak Emission Wavelength: 900nm The MT5900-IR is an infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed packaged with the lens optimized to produce a narrow viewing angle. FEATURES
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MT5900-IR
900nm
MT5900-IR
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Untitled
Abstract: No abstract text available
Text: Infrared LED Product No: M T51020-IR Peak Emission Wavelength: 1020nm The MT51020-IR is an infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed packaged with the lens optimized to produce a narrow viewing angle.
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T51020-IR
1020nm
MT51020-IR
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Untitled
Abstract: No abstract text available
Text: Near Infrared LED Product No: MT5720-IR Peak Emission Wavelength: 720nm The MT5720-IR is a near infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed with the lens optimized to produce a narrow beam angle. FEATURES
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MT5720-IR
720nm
MT5720-IR
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Bulgin
Abstract: No abstract text available
Text: T e rm in a l Strips R IR Compact, M iniature terminal strips with terminal spacings on 3.5mm or 7mm pitch. Styles available include vertical, horizontal and 45° mounting types in 2 to 16 ways. R IR Standard terminal strips offering a wide selection of 5mm, 5.08mm, 7.5mm, 10mm
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-IR-Lumineszenzdioden, hergestellt im Schmelzepitaxieverfahren • Gute Linearität /e = /[/p ] bei hohen Strömen • Sehr hoher Wirkungsgrad
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fl235b05
0DS7717
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sj 76a
Abstract: 377D IRFF430 IRFF431 IRFF432 IRFF433 IRF 250V 100A g385 125CV
Text: HE D | 4055452 0GGc14Qb 3 | Data Sheet No. PD-9.377D I«R INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER T-39-09 HEXFET TRA N SISTO RS IR FF4 3 0 IRFF431 N-CHANNEL POWER MOSFETs TO-39 P A C K A G E IR FF4 3 2 IR FF4 3 3 500 Volt, 1.5 Ohm HEXFET
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T-39-09
G-388
sj 76a
377D
IRFF430
IRFF431
IRFF432
IRFF433
IRF 250V 100A
g385
125CV
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalten/ M l tights reset red 3 2 1 4 5 _ ^ LO A 12 <T> mi n .9 b 4 itwi X mmmm. i- 6 w ^ _ » =£=§=L LO - - 3-6mm LO 6 - 9 ,5mm Recommended Ethernet connection P in p a ir 2 p a ir J 1 2 3 L 10BASE-T
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10BASE-T
100BASE-TX
D-32339
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Q62703-Q1031
Abstract: Q62703-Q1819 Q62703-Q1820
Text: LD 274 LD 274 fex06260 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Sehr enger Abstrahlwinkel ● GaAs-IR-LED, hergestellt im Schmelzepitaxieverfahren
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fex06260
Q62703-Q1031
Q62703-Q1819
Q62703-Q1820
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sfh 517
Abstract: Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 TA521 SFH415
Text: SFH 415 SFH 416 SFH 415 SFH 416 fex06630 fexf6626 GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● GaAs-IR-Lumineszenzdioden, hergestellt
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fex06630
fexf6626
415-T
415-U
416-R
sfh 517
Q62702-P1136
Q62702-P1137
Q62702-P1139
Q62702-P296
TA521
SFH415
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Sehr enger Abstrahlwinkel • GaAs-IR-LED, hergestellt im Schmelzepitaxieverfahren
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OHR01041
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Q62703-Q516
Abstract: diode SR 315
Text: SFH 485 P SFH 485 P fex06306 GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren
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fex06306
Q62703-Q516
diode SR 315
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LD275 led
Abstract: MARKING 73 LD275 A235L SFH 567 siemens LD LD274
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 LD 275 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Sehr enger Abstrahlwinkel LD 274 • GaAs-IR-LED, hergestellt im Schmelzepitaxieverfahren
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LD274
LD275
A23SbG5
DGS777L
2741re!
235b05
D0S7777
LD275 led
MARKING 73
LD275
A235L
SFH 567
siemens LD
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LD274
Abstract: Q62703-Q1031 Q62703-Q1819 Q62703-Q1820
Text: LD 274 LD 274 fex06260 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Sehr enger Abstrahlwinkel ● GaAs-IR-LED, hergestellt im ● Extremely narrow half angle
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fex06260
LD274
Q62703-Q1031
Q62703-Q1819
Q62703-Q1820
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