IPP80N06S2L-11, Search Results
IPP80N06S2L-11, Price and Stock
Infineon Technologies AG IPP80N06S2L11AKSA1MOSFET N-CH 55V 80A TO220-3 |
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IPP80N06S2L11AKSA1 | Tube |
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Rochester Electronics LLC IPP80N06S2L11AKSA2MOSFET N-CH 55V 80A TO220-3-1 |
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IPP80N06S2L11AKSA2 | Bulk | 321 |
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Infineon Technologies AG IPP80N06S2L11AKSA2MOSFET N-CH 55V 80A TO220-3 |
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IPP80N06S2L11AKSA2 | Tube |
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IPP80N06S2L11AKSA2 | 13,451 | 355 |
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IPP80N06S2L11AKSA2 | 21,652 | 1 |
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IPP80N06S2L11AKSA2 | 143 Weeks | 50 |
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Infineon Technologies AG IPP80N06S2L11OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ; ECCN: EAR99 |
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IPP80N06S2L11 | 305 |
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IPP80N06S2L-11, Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPP80N06S2L-11 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 11.0 mOhm; ID (max): 80.0 A; RthJC (max): 0.95 K/W; | Original | |||
IPP80N06S2L11AKSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO220-3 | Original | |||
IPP80N06S2L11AKSA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO220-3 | Original |