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Text: IPP114N12N3 G OptiMOSTM3 Power-Transistor Features Product Summary • N-channel, normal level VDS 120 V RDS on max 11.4 mΩ • Excellent gate charge x R DS(on) product (FOM) 75 ID • Very low on-resistance R DS(on) A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free