IPP100N06S2L-05 Search Results
IPP100N06S2L-05 Price and Stock
Infineon Technologies AG IPP100N06S2L05AKSA2MOSFET N-CH 55V 100A TO220-3 |
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IPP100N06S2L05AKSA2 | Tube | 456 | 1 |
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IPP100N06S2L05AKSA2 | 416 |
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IPP100N06S2L05AKSA2 | 2,500 | 500 |
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IPP100N06S2L05AKSA2 | Bulk | 472 | 1 |
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IPP100N06S2L05AKSA2 | 340 | 1 |
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IPP100N06S2L05AKSA2 | Tube | 500 |
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IPP100N06S2L05AKSA2 | 1,000 | 13 Weeks | 500 |
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IPP100N06S2L05AKSA2 | 1,000 | 1 |
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Infineon Technologies AG IPP100N06S2L05AKSA1MOSFET N-CH 55V 100A TO220-3 |
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IPP100N06S2L05AKSA1 | Tube |
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Infineon Technologies AG IPP100N06S2L05AKSATrans MOSFET N-CH 55V 100A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP100N06S2L05AKSA) |
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IPP100N06S2L05AKSA | Tube | 12 Weeks | 500 |
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Infineon Technologies AG IPP100N06S2L05OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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IPP100N06S2L05 | 706 |
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IPP100N06S2L-05 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPP100N06S2L-05 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | |||
IPP100N06S2L05AKSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO220-3 | Original | |||
IPP100N06S2L05AKSA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO220-3 | Original |