IPI110N20N3 G Search Results
IPI110N20N3 G Price and Stock
Infineon Technologies AG IPI110N20N3GAKSA1MOSFET N-CH 200V 88A TO262-3 |
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IPI110N20N3GAKSA1 | Tube |
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IPI110N20N3GAKSA1 | 552 |
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Infineon Technologies AG IPI110N20N3GPOWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.011OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-262AA |
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IPI110N20N3G | 13 |
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IPI110N20N3 G Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPI110N20N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 200.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 88.0 A; | Original | |||
IPI110N20N3GAKSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 88A TO262-3 | Original |