IPD600N25N3 G Search Results
IPD600N25N3 G Price and Stock
Infineon Technologies AG IPD600N25N3GATMA1MOSFET N-CH 250V 25A TO252-3 |
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IPD600N25N3GATMA1 | Cut Tape | 5,569 | 1 |
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IPD600N25N3GATMA1 | Reel | 7,500 | 16 Weeks | 2,500 |
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IPD600N25N3GATMA1 | 2,165 |
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IPD600N25N3GATMA1 | 15,000 | 2,500 |
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IPD600N25N3GATMA1 | 15,000 | 16 Weeks | 2,500 |
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IPD600N25N3GATMA1 | Bulk | 3,349 | 1 |
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IPD600N25N3GATMA1 | 1 |
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IPD600N25N3GATMA1 | Cut Tape | 2,350 |
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IPD600N25N3GATMA1 | 17 Weeks | 2,500 |
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IPD600N25N3GATMA1 | 9,160 |
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Infineon Technologies AG IPD600N25N3GBTMA1MOSFET N-CH 250V 25A TO252-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD600N25N3GBTMA1 | Reel |
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Infineon Technologies AG IPD600N25N3 GTrans MOSFET N-CH 250V 25A 3-Pin(2+Tab) DPAK T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD600N25N3 G | 2,500 | 32 |
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Infineon Technologies AG IPD600N25N3GPOWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD600N25N3G | 2,168 |
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IPD600N25N3G | 2,380 |
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IPD600N25N3G | 2,705 |
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IPD600N25N3G | 9,080 |
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IPD600N25N3 G Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPD600N25N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 250.0 V; RDS (on) (max) (@10V): 60.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 25.0 A; | Original | |||
IPD600N25N3GATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 250V 25A | Original | |||
IPD600N25N3GBTMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 250V 25A TO252-3 | Original |