IPD30N06S2L-13 Search Results
IPD30N06S2L-13 Price and Stock
Infineon Technologies AG IPD30N06S2L13ATMA4MOSFET N-CH 55V 30A TO252-31 |
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IPD30N06S2L13ATMA4 | Digi-Reel | 17,946 | 1 |
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IPD30N06S2L13ATMA4 | Ammo Pack | 16 Weeks, 4 Days | 1 |
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IPD30N06S2L13ATMA4 | 2,658 |
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IPD30N06S2L13ATMA4 | 1,145,000 | 2,500 |
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IPD30N06S2L13ATMA4 | Cut Tape | 14,632 | 1 |
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IPD30N06S2L13ATMA4 | 514 |
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IPD30N06S2L13ATMA4 | 300,002 | 1 |
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IPD30N06S2L13ATMA4 | Cut Tape | 2,495 |
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IPD30N06S2L13ATMA4 | 13 Weeks | 2,500 |
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Infineon Technologies AG IPD30N06S2L-13MOSFET N-CH 55V 30A TO252-3 |
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IPD30N06S2L-13 | Cut Tape |
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IPD30N06S2L-13 | 2,562 |
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IPD30N06S2L-13 | 17,980 |
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Infineon Technologies AG IPD30N06S2L13ATMA1IPD30N06 - 55V-60V N-Channel Automotive MOSFET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD30N06S2L13ATMA1 | 333 | 1 |
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IPD30N06S2L-13 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPD30N06S2L-13 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 13.0 mOhm; ID (max): 30.0 A; RthJC (max): 1.1 K/W; | Original | |||
IPD30N06S2L13ATMA4 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 30A TO252-3 | Original |