IPD12 Search Results

IPD12 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TIPD128		Texas Instruments	Capacitive Load Drive Verified Reference Design Using an Isolation Resistor

IPD12 Price and Stock

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Infineon Technologies AG IPD122N10N3GATMA1 MOSFET N-CH 100V 59A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD122N10N3GATMA1	Cut Tape	43,108		1	1 $2.16 10 $1.381 100 $2.16 1000 $0.6877 10000 $0.6877	Buy Now
	IPD122N10N3GATMA1	Digi-Reel	43,108		1	1 $2.16 10 $1.381 100 $2.16 1000 $0.6877 10000 $0.6877	Buy Now
	IPD122N10N3GATMA1	Reel	40,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.60712	Buy Now
Avnet Americas	IPD122N10N3GATMA1	Reel	15,000	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD122N10N3GATMA1		34,096			1 $1.37 10 $0.987 100 $0.787 1000 $0.621 10000 $0.593	Buy Now
Verical	IPD122N10N3GATMA1		5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.5968	Buy Now
Arrow Electronics	IPD122N10N3GATMA1		5,000	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.59	Buy Now
	IPD122N10N3GATMA1	Cut Strips	1,946	16 Weeks	1	1 $0.8396 10 $0.7169 100 $0.6262 1000 $0.5189 10000 $0.5189	Buy Now

Newark	IPD122N10N3GATMA1	Cut Tape	15,275		1	1 $1.34 10 $1.06 100 $0.931 1000 $0.706 10000 $0.706	Buy Now
	IPD122N10N3GATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.631	Buy Now
Bristol Electronics	IPD122N10N3GATMA1		99			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IPD122N10N3GATMA1				1	1 $0.6746 10 $0.6746 100 $0.6341 1000 $0.5734 10000 $0.5734	Buy Now
Chip1Stop	IPD122N10N3GATMA1	Cut Tape	1,996			1 $0.747 10 $0.644 100 $0.567 1000 $0.468 10000 $0.468	Buy Now
EBV Elektronik	IPD122N10N3GATMA1			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc IPD1-20-D-K CONN RCPT HSG 40POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD1-20-D-K	Bulk	7,152		1	1 $0.9 10 $0.735 100 $0.5991 1000 $0.53868 10000 $0.53868	Buy Now
Avnet Americas	IPD1-20-D-K	Bulk	55	11 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD1-20-D-K		2,347			1 $0.92 10 $0.92 100 $0.92 1000 $0.902 10000 $0.53	Buy Now
Verical	IPD1-20-D-K		1,075		50	1 - 10 - 100 $1.3647 1000 $1.1706 10000 $1.1706	Buy Now
	IPD1-20-D-K		612		12	1 - 10 - 100 $0.9861 1000 $0.6437 10000 $0.5287	Buy Now
Arrow Electronics	IPD1-20-D-K		612	14 Weeks	1	1 $0.9861 10 $0.9861 100 $0.9861 1000 $0.6437 10000 $0.5287	Buy Now

Newark	IPD1-20-D-K	Bulk	51		1	1 $1.64 10 $1.48 100 $1.26 1000 $0.906 10000 $0.788	Buy Now
Infineon Technologies AG IPD12CN10NGATMA1 MOSFET N-CH 100V 67A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD12CN10NGATMA1	Cut Tape	7,127		1	1 $2.33 10 $1.496 100 $2.33 1000 $0.75215 10000 $0.75215	Buy Now
	IPD12CN10NGATMA1	Digi-Reel	7,127		1	1 $2.33 10 $1.496 100 $2.33 1000 $0.75215 10000 $0.75215	Buy Now
	IPD12CN10NGATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.67512	Buy Now
Mouser Electronics	IPD12CN10NGATMA1		1,273			1 $1.73 10 $1.23 100 $0.902 1000 $0.705 10000 $0.665	Buy Now
Verical	IPD12CN10NGATMA1		37,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.6242	Buy Now
	IPD12CN10NGATMA1		12,500		426	1 - 10 - 100 - 1000 $0.797 10000 $0.797	Buy Now
	IPD12CN10NGATMA1		2,485		25	1 - 10 - 100 $1.2625 1000 $1.2625 10000 $1.2625	Buy Now
	IPD12CN10NGATMA1		305		11	1 - 10 - 100 $0.6966 1000 $0.638 10000 $0.638	Buy Now
Arrow Electronics	IPD12CN10NGATMA1		37,500	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.6242	Buy Now
	IPD12CN10NGATMA1	Cut Strips	305	16 Weeks	1	1 $0.9604 10 $0.8335 100 $0.6966 1000 $0.638 10000 $0.638	Buy Now
Newark	IPD12CN10NGATMA1	Cut Tape	4,308		1	1 $1.59 10 $1.33 100 $1.08 1000 $0.795 10000 $0.795	Buy Now

Rochester Electronics	IPD12CN10NGATMA1		12,500		1	1 $0.7501 10 $0.7501 100 $0.7051 1000 $0.6376 10000 $0.6376	Buy Now
TME	IPD12CN10NGATMA1		1,988		1	1 $1.47 10 $1.26 100 $0.99 1000 $0.9 10000 $0.9	Buy Now
Chip1Stop	IPD12CN10NGATMA1	Cut Tape	2,485			1 $1.01 10 $1.01 100 $1 1000 $1 10000 $1	Buy Now
EBV Elektronik	IPD12CN10NGATMA1			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc IPD1-20-D CONN RCPT HSG 40POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD1-20-D	Bulk	482		1	1 $1.86 10 $1.512 100 $1.2322 1000 $1.00466 10000 $0.9288	Buy Now
Avnet Americas	IPD1-20-D	Bulk	119	10 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD1-20-D		368			1 $2.56 10 $2.08 100 $1.8 1000 $1.34 10000 $1.25	Buy Now
Verical	IPD1-20-D		1,375		25	1 - 10 - 100 $2.775 1000 $1.8179 10000 $1.8179	Buy Now
Newark	IPD1-20-D	Bulk			1	1 $1.64 10 $1.48 100 $1.26 1000 $0.906 10000 $0.788	Buy Now
Samtec Inc IPD1-25-D-K-M CONN RCPT HSG 50POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD1-25-D-K-M	Tube	355		1	1 $5.78 10 $5.78 100 $3.08 1000 $2.6 10000 $2.35	Buy Now
Mouser Electronics	IPD1-25-D-K-M		59			1 $3.76 10 $3.76 100 $3.31 1000 $2.14 10000 $2.14	Buy Now
Verical	IPD1-25-D-K-M		40		2	1 - 10 $5.78 100 $5.78 1000 $5.78 10000 $5.78	Buy Now
Newark	IPD1-25-D-K-M	Bulk			1	1 $4.49 10 $4.29 100 $3.6 1000 $2.58 10000 $2.33	Buy Now

Find more IPD12 price and stock on Findchips.com

IPD12 Datasheets (48)

Part	Manufacturer	Description	Datasheet Type	PDF
IPD12000	Net to Net Technologies	DSLAM Stackable DC 14 slot	Original	PDF
IPD1-20-D	Samtec	Rectangular Connectors - Housings, Connectors, Interconnects, CONN RECEPT .100" 40POS	Original	PDF
IPD1-20-D-K	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONN	Original	PDF
IPD1-20-D-K-M	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONNECTOR	Original	PDF
IPD1-20-D-K-R	Samtec	CONN RCPT HSG 40POS 2.54MM	Original	PDF
IPD1-20-D-R	Samtec	CONN RCPT HSG 40POS 2.54MM	Original	PDF
IPD1-20-S-K	Samtec	CONN RCPT HSG 20POS 2.54MM	Original	PDF
IPD1-20-S-K-R	Samtec	CONN RCPT HSG 20POS 2.54MM	Original	PDF
IPD1-20-S-R	Samtec	CONN RCPT HSG 20POS 2.54MM	Original	PDF
IPD122N10N3 G	Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); V_DS (max): 100.0 V; R_{DS (on)} (max) (@10V): 12.2 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 59.0 A;	Original	PDF
IPD122N10N3GATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 59A	Original	PDF
IPD122N10N3GBTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 59A TO252-3	Original	PDF
IPD1-25-D	Samtec	Rectangular Connectors - Housings, Connectors, Interconnects, CONN HOUSING 50 POS 2.54MM ST	Original	PDF
IPD1-25-D-K	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONN	Original	PDF

IPD1-25-D-K-M	Samtec	CONN RCPT HSG 50POS 2.54MM	Original	PDF
IPD1-25-D-K-R	Samtec	CONN RCPT HSG 50POS 2.54MM	Original	PDF
IPD1-25-D-R	Samtec	CONN RCPT HSG 50POS 2.54MM	Original	PDF
IPD1-25-S-K	Samtec	CONN RCPT HSG 25POS 2.54MM	Original	PDF
IPD1-25-S-K-R	Samtec	CONN RCPT HSG 25POS 2.54MM	Original	PDF
IPD1-25-S-R	Samtec	CONN RCPT HSG 25POS 2.54MM	Original	PDF

IPD12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10 Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10
12N03L Abstract: No abstract text available Text: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	PDF	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L
C15N Abstract: No abstract text available Text: IPAG - Innovative Processing AG Product Overview Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com Series IPD12 PIN Diode The Series IPD12 The series IPD12 PINs are applicable for building high bit rate (10 Gbit/s NRZ and	Original	PDF	D-47057 ipag35 IPD12 IPD12 PO-IPD12-0004 C15N
12N03L Abstract: 12N03 Text: IPD12N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) ID V m 10.4 30 A P-TO252 Superior thermal resistance	Original	PDF	IPD12N03L P-TO252 IPD12N03L P-TO252 Q67040-S4342 12N03L 20ents 12N03L 12N03
12CN10N Abstract: No abstract text available Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N
marking EB5 Abstract: diode marking eb5 marking G9 Text: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H )& Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D	Original	PDF	IPD122N10N3 7865AE5 marking EB5 diode marking eb5 marking G9
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 diode d335 12CN10 Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 diode d335 12CN10
12CN10N Abstract: IPP12CN10N IPI12CN10N PG-TO220-3 d67a Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Features Product Summary • N-channel, normal level V DS 100 V R DS on ,max (TO252) 12.4 mΩ • Excellent gate charge x R DS(on) product (FOM) ID • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 d67a
12N03L Abstract: IPD12N03L IPU12N03L 12n03 ANPS071E P- TO252 -3-11 Text: IPD12N03L IPU12N03L OptiMOS Buck converter series Product Summary Feature VDS •N-Channel 30 •Logic Level RDS on •Low On-Resistance RDS(on) ID •Excellent Gate Charge x R DS(on) product (FOM) V 10.4 mΩ 30 P- TO251 -3-1 A P- TO252 -3-11 •Superior thermal resistance	Original	PDF	IPD12N03L IPU12N03L Q67040-S4342 12N03L Q67042-S4043 12N03L IPD12N03L IPU12N03L 12n03 ANPS071E P- TO252 -3-11
ip dslam Abstract: IPD12000 DSLAM configuration Text: IP DSL Access Multiplexer 12000 IPD12000 IPD12000 Native IP DSLAM The IP DSLAM for large scale Central Office or MDU/Campus deployments Overview Features Utilizes Net to Net’s IPacket A rc h i t e c t u re Net to Net Technologies’ IP DSL Access Multiplexer is the indus	Original	PDF	IPD12000 UL1950 -200ft 500ft) ip dslam IPD12000 DSLAM configuration
122N10N Abstract: No abstract text available Text: IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12.2 mW ID 59 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant	Original	PDF	IPD122N10N3 IEC61249-2-21 PG-TO252-3 122N10N 122N10N
Untitled Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3
122N10N Abstract: IPD122N10N3 G JESD22 Text: IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.2 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPD122N10N3 PG-TO252-3 122N10N 122N10N IPD122N10N3 G JESD22
Untitled Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 12CNE8N

Untitled Abstract: No abstract text available Text: IPD122N10N3 G TM 3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ )& Y I ฀ -1 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5	Original	PDF	IPD122N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à
127n06l Abstract: IPD127N06L Text: IPD127N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level 60 R DS on ,max 12.7 ID 50 V mΩ A • 175 °C operating temperature • Avalanche rated	Original	PDF	IPD127N06L PG-TO252-3 127N06L 127n06l
12N03L Abstract: 12n03lb 12n03 IPD12N03LB PG-TO252-3-11 Text: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	PDF	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L 12n03lb 12n03 PG-TO252-3-11
infineon marking TO-252 Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IEC61249-2-21 PG-TO263-3 infineon marking TO-252 IEC61249-2-21 PG-TO220-3 12CNE8N
12CN10N Abstract: 12CN10 diode d335 d67a IPP12CN10N D-335 IPD12CN10NG IPB12CN10N G Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N 12CN10 diode d335 d67a D-335 IPD12CN10NG IPB12CN10N G
12CN10N Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 12.4 m: • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N
12N03L Abstract: 12N03LB IPD12N03LB PG-TO252-3-11 12n03 Text: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	PDF	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L 12N03LB PG-TO252-3-11 12n03
10 GHz pin diode Abstract: diode all 4606 C10B C10N Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD12_C10Z: 10 GHz PIN Diode Chip Applications The series IPD12 PINs are applicable for building high bit rate, 10 Gbit/s opto-electronic receivers for	Original	PDF	D-47057 ipag35 IPD12 Responsiv75 DS-IPD12 C10Z-0004 10 GHz pin diode diode all 4606 C10B C10N
12CNE8N Abstract: IPD12CNE8N IPP12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IPB12CN10N PG-TO263-3 PG-TO252-3 12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff
12N03L Abstract: IPU12N03L TO252 thermal character IPD12N03L P-TO252 12n03 Text: IPD12N03L IPU12N03L Preliminary data OptiMOS Power-Transistor Product Summary Feature • N-Channel · Logic Level · Low on-resistance R DS on · Excellent Gate Charge x RDS(on) product (FOM) · Superior thermal resistance · 175°C operating temperature	Original	PDF	IPD12N03L IPU12N03L P-TO251 P-TO252 Q67040-S4342 12N03L Q67042-S4043 12N03L IPU12N03L TO252 thermal character IPD12N03L P-TO252 12n03

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IPD12 Search Results

IPD12 Result Highlights (1)

IPD12 Price and Stock

Infineon Technologies AG IPD122N10N3GATMA1

Samtec Inc IPD1-20-D-K

Infineon Technologies AG IPD12CN10NGATMA1

Samtec Inc IPD1-20-D

Samtec Inc IPD1-25-D-K-M

IPD12 Datasheets (48)

IPD12 Datasheets Context Search

12CN10N

12N03L

C15N

12N03L

12CN10N

marking EB5

12CN10N

12CN10N

12N03L

ip dslam

122N10N

Untitled

122N10N

Untitled

Untitled

127n06l

12N03L

infineon marking TO-252

12CN10N

12CN10N

12N03L

10 GHz pin diode

12CNE8N

12N03L