IPB80N06S2L-06 Search Results
IPB80N06S2L-06 Price and Stock
Infineon Technologies AG IPB80N06S2L06ATMA2MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S2L06ATMA2 | Cut Tape | 991 | 1 |
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IPB80N06S2L06ATMA2 | Reel | 12 Weeks | 1,000 |
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IPB80N06S2L06ATMA2 | 990 |
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IPB80N06S2L06ATMA2 | 1,000 | 14 |
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IPB80N06S2L06ATMA2 | Cut Tape | 981 | 1 |
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IPB80N06S2L06ATMA2 | 944 | 1 |
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IPB80N06S2L06ATMA2 | Cut Tape | 1,000 |
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Infineon Technologies AG IPB80N06S2L06ATMA1MOSFET N-CH 55V 80A TO263-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S2L06ATMA1 | Reel |
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Infineon Technologies AG IPB80N06S2L-06POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 55V, 0.0084OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S2L-06 | 450 |
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IPB80N06S2L-06 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB80N06S2L-06 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 6.0 mOhm; ID (max): 80.0 A; RthJC (max): 0.6 K/W; | Original | |||
IPB80N06S2L06ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 | Original | |||
IPB80N06S2L06ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 | Original |