IPB054N08N3 G Search Results
IPB054N08N3 G Price and Stock
Infineon Technologies AG IPB054N08N3GATMA1MOSFET N-CH 80V 80A D2PAK |
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IPB054N08N3GATMA1 | Digi-Reel | 3,633 | 1 |
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IPB054N08N3GATMA1 | 3,102 |
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IPB054N08N3GATMA1 | 11,000 | 1,000 |
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IPB054N08N3GATMA1 | Cut Strips | 106 | 16 Weeks | 1 |
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IPB054N08N3GATMA1 | Cut Tape | 1 |
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IPB054N08N3GATMA1 | 5,000 | 1 |
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IPB054N08N3GATMA1 | 1 |
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IPB054N08N3GATMA1 | Cut Tape | 949 |
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IPB054N08N3GATMA1 | 14,000 | 17 Weeks | 1,000 |
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IPB054N08N3GATMA1 | 5,000 |
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IPB054N08N3GATMA1 | 11,000 | 1 |
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Infineon Technologies AG IPB054N08N3GXTTrans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB054N08N3GATMA1) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB054N08N3GXT | Reel | 16 Weeks | 1,000 |
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Infineon Technologies AG IPB054N08N3 GMOSFETs N-Ch 80V 80A D2PAK-2 OptiMOS 3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB054N08N3 G | 898 |
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Infineon Technologies AG IPB054N08N3GOPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB054N08N3G | 482 |
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IPB054N08N3G | 10,600 |
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IPB054N08N3 G Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB054N08N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A; | Original | |||
IPB054N08N3GATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 80A TO263-3 | Original |
IPB054N08N3 G Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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057N08N
Abstract: 054N08N ipp06cn08n IEC61249-2-21 PG-TO220-3 IPB054N08N3 G
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IPP057N08N3 IPI057N08N3 IPB054N08N3 IPP06CN08N IEC61249-2-21 PG-TO220-3 PG-TO262-3 057N08N 054N08N ipp06cn08n IEC61249-2-21 PG-TO220-3 IPB054N08N3 G | |
057N08N
Abstract: 054n08n DSV80 IPB054N08N3-G ipp06cn08n PG-TO220-3 IPP057N08N3 G IPP057N08N3
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IPP057N08N3 IPI057N08N3 IPB054N08N3 IPP06CN08N PG-TO220-3 PG-TO262-3 PG-TO263-3 057N08N 054n08n DSV80 IPB054N08N3-G ipp06cn08n PG-TO220-3 IPP057N08N3 G | |
marking EB diode
Abstract: Q451 ee 19 8b qg
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IPP057N08N3 IPI057N08N3 IPB054N08N3 marking EB diode Q451 ee 19 8b qg | |
Untitled
Abstract: No abstract text available
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IPP057N08N3 IPI057N08N3 IPB054N08N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? | |
3bs02
Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
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Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J | |
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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600V igbt dc to dc buck converter
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
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B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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