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Infineon Technologies AG IPB031NE7N3GATMA1 MOSFET N-CH 75V 100A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB031NE7N3GATMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	IPB031NE7N3GATMA1				1	1 $2.36 10 $2.04 100 $1.42 1000 $1.32 10000 $1.32	Get Quote

IPB031NE7N3 G Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IPB031NE7N3 G		Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); V_DS (max): 75.0 V; R_{DS (on)} (max) (@10V): 3.1 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 100.0 A;		Original	PDF
IPB031NE7N3GATMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 75V 100A TO263-3		Original	PDF

IPB031NE7N3 G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IPB031NE7N3 G Abstract: 031NE7N IEC61249-2-21 JESD22 2506v Text: IPB031NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters V DS 75 V R DS on ,max 3.1 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)	Original	PDF	IPB031NE7N3 IEC61249-2-21 PG-TO263-3 031NE7N IPB031NE7N3 G 031NE7N IEC61249-2-21 JESD22 2506v
031NE7N Abstract: JESD22 IPB031NE7N3 G Text: IPB031NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters V DS 75 V R DS on ,max 3.1 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)	Original	PDF	IPB031NE7N3 PG-TO263-3 031NE7N 031NE7N JESD22 IPB031NE7N3 G
Diode 9H Abstract: d5cd IPB031NE7N3 G Text: IPB031NE7N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q @D9=9J54 D53 8>? <? 7I 6? BCI>3 8B? >? EC B53 D9 6931D9 ?> Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 3 ? >F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y" I9 )( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &	Original	PDF	IPB031NE7N3 Diode 9H d5cd IPB031NE7N3 G
Untitled Abstract: No abstract text available Text: IPB031NE7N3 G TM 3 Power-Transistor Product Summary Features ?> Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀ ฀3?>F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y I9 ) 6 Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ (&	Original	PDF	IPB031NE7N3 B53D96931D9? CG9D389 381B75à D5CD54 D1B75Dà 931D9?
PX3544 Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly	Original	PDF	lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original	PDF
TLE4957C Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970 Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!	Original	PDF