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    FL80S05

    Abstract: No abstract text available
    Text: Internationa! I G R Rectifier Part Number V RRM IV Fast Recovery Diodes lf*V @ T c A) (C) •f SM VFI* @ 7 t X 50 H i 60H z ' f (AV) r JC (A) (A) (V) (°C/W) Fax on t„ („S) Notes Number Case Outline Key Discrete IOOO 40 75 400 420 1.95 0.6 500 3 4


    OCR Scan     		PDF FL10S02 FL40S02 FL80S05 IRD3899R 40HFLR105021 40FL10S02M) 60Apk. IOOA41S

    FS50VS-3

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE j FS50VS-3 OUTLINE DRAWING Dimensions in mm - 4-5 1 j 1.3 0.5 C i X Q -Ï Q C?; A ’ ö +i c\i T" ?) (3) •4) • 10V DRIVE • VDSS .150V


    OCR Scan     		PDF FS50VS-3 130ns O-220S FS50VS-3

    diode gen 52

    Abstract: 34AG
    Text: PD-9.1588A International IQ R Rectifier IRL3103D1S FETKY MOSFET & SCHOTTKY RECTIFIER • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Generation ¿Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal ForSynchronous Regulator Application


    OCR Scan     		PDF IRL3103D1S diode gen 52 34AG