70GHz HEMT Amplifier
Abstract: inp hemt power amplifier vamp InP transistor HEMT
Text: NS 2P N221 1 Oct. 2004 CI0401 Preliminary 43 Gb/s Data Limiting Amplifier Features Data bit rate : DC - 43 Gb/s Saturated output voltage amplitude : 0.9Vpp Small signal gain : 20dB General Description The CI0401 is an ultra-fast InP HEMT Limiting Amplifier operating at rates up to 43
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CI0401
CI0401
70GHz HEMT Amplifier
inp hemt power amplifier
vamp
InP transistor HEMT
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inp hemt power amplifier
Abstract: NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier CI0402 N218
Text: NS 2P N218 CI0402 17 Aug. 2004 Preliminary 78 GHz – 100 GHz High - Power Amplifier Features Wideband operation: 78 GHz – 100 GHz Pout = 17 dBm typ, Pin = 5 dBm P(-1dB) = 11 dBm (typ) Linear Gain: 14 – 23 dB Linear Gain Control Range: 10 dB WR-10 Waveguide Interface
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CI0402
WR-10
CI0402
inp hemt power amplifier
NS 2P N218
94GHz
100ghz MMIC POWER AMPLIFIER hemt
94GHz amplifier
N218
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inp hemt power amplifier
Abstract: 100ghz MMIC POWER AMPLIFIER hemt 94GHz
Text: EL07-292-601-008 CI0621 May 2007 Preliminary 88 GHz – 105 GHz High - Power Amplifier Features Wideband operation: 88 GHz – 105 GHz Pout = 18 dBm typ, Pin = 5 dBm P(-1dB) = 12 dBm (typ) Linear Gain: 17 – 20 dB Linear Gain Control Range: 8 dB WR-10 Waveguide Interface
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EL07-292-601-008
CI0621
WR-10
CI0621
inp hemt power amplifier
100ghz MMIC POWER AMPLIFIER hemt
94GHz
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SBB-3089Z
Abstract: SBB3089
Text: SBB3089Z SBB3089Z 50MHz to 6000MHz InGaP HBT Active Bias Gain Block 50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK Package: SOT-89 Product Description Features RFMD’s SBB3089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active
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SBB3089Z
50MHz
6000MHz
SBB3089Z
OT-89
1950MHz
SBB-3089Z
SBB3089
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Untitled
Abstract: No abstract text available
Text: Design & Manufacturing Excellence Military & Space Solutions Custom Integrated Circuits • Semiconductor device to system level knowledge • Validated device models • Extensive library of proven Analog, Digital & Mixed-Signal ICs and MMICs • Specialty products include: Synthesizers,
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AS9100
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InP transistor HEMT
Abstract: Class E amplifier GaN amplifier inp hemt power amplifier pHEMT transistor visitor Gan hemt transistor varian NONLINEAR MODEL LDMOS
Text: 2130 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 10, OCTOBER 2007 A GaN HEMT Class F Amplifier at 2 GHz With 80% PAE David Schmelzer, Student Member, IEEE, and Stephen I. Long, Senior Member, IEEE Abstract—A Class F amplifier has been designed, fabricated, and
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GaAs HEMTs X band
Abstract: X-band Gan Hemt 0.18um AlGaN/GaN HEMTs x-band mmic lna alcon X-band diode gp 421 LNA x-band
Text: High Linearity, Robust, AlGaN-GaN HEMTs for LNA & Receiver ICs P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, Cree Lighting Company, 340 Storke Road, Goleta, CA 93117. R. Neidhard, L. Kehias, T. Jenkins, Air Force Research Laboratory, Sensors Directorate, WPAFB, OH 45433.
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SFT-9100
Abstract: InP transistor HEMT sft 43 Sft9100 SFT-9200B 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise
Text: SFT-9200B SFT-9200B 50GHz Transimpedance Amplifier 50GHZ TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9200B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9200B
50GHz
SFT-9200B
43Gb/s
40GbE,
100GbE
SFT-9100
InP transistor HEMT
sft 43
Sft9100
9200B
InP HEMT transistor at 50ghz
inp hemt low noise amplifier
InP HBT transistor
mesfet low noise
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N220
Abstract: No abstract text available
Text: NS 2P N220 CI0403 31 Aug. 2004 Preliminary 30 GHz Clock Distributor Features Wideband operation: 5 GHz – 30 GHz Single-ended clock input 2 differential outputs Output Amplitude: 0.9 Vpp Typ. General Description The CI0403 is an ultra-fast 1:2 Clock Distributor operating at rates up to 30 GHz. The
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CI0403
CI0403
N220
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60GHz transistor
Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
Text: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9400B
60GHz
SFT-9400B
43Gb/s
40GbE,
100GbE
50GHz
60GHz transistor
InP transistor HEMT
SFT9400B
OC-768
98T2
InP HBT transistor low noise
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Untitled
Abstract: No abstract text available
Text: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal
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SBF5089Z
SBF5089ZDC
500MHz,
OT-89
SBF5089Z
DS111011
SBF5089ZSQ
SBF5089ZSR
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RFVC1800
Abstract: RFVC-1800
Text: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The
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RFVC1800
RFVC1800
DS100527
RFVC1800PCK-410
RFVC1800S2
10pcs
RFVC-1800
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Untitled
Abstract: No abstract text available
Text: R0605300 R0605300 Low Current 5MHz to 65 MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605300 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The
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R0605300
OT-115J
R0605300
65MHz
DS090303
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Untitled
Abstract: No abstract text available
Text: R0605250 R0605250 5MHz to 65MHz Si Reverse Hybrid 5MHz to 65MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605250 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The
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R0605250
65MHz
OT-115J
R0605250
DS090303
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InP transistor HEMT
Abstract: Gan on silicon transistor AlGaN/GaN HEMTs GaN TRANSISTOR MMIC POWER AMPLIFIER hemt Fermi level inp hemt power amplifier
Text: TECHNOLOGY T RANSISTORS High-power GaN HEMTs battle for vacuum-tube territory US NAVY The vacuum tubes used in today’s millimeter-wave transmitters face an increasing threat from GaN HEMTs. Cree’s Yifeng Wu and Primit Parikh are leading the GaN charge with designs that
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RFVC1800
Abstract: RFVC-1800
Text: RFVC1800 RFVC1800 Preliminary WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The
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RFVC1800
RFVC1800
DS090609
RFVC-1800
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reverse hybrid
Abstract: No abstract text available
Text: R0605250 R0605250 5MHz to 65MHz Si Reverse Hybrid 5MHz to 65MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605250 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The
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R0605250
65MHz
OT-115J
65MHz
200mA
24VDC
R0605250
reverse hybrid
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RFVC1800
Abstract: RFVC-1800 DS100112
Text: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The
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RFVC1800
RFVC1800
DS100112
RFVC1800SB
RFVC1800PCK-410
10pcs
RFVC-1800
DS100112
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Untitled
Abstract: No abstract text available
Text: R0605300 R0605300 Low Current 5MHz to 65 MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605300 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The
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R0605300
OT-115J
R0605300
65MHz
65MHz
200mA
24VDC
DS090303
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DIN45004B
Abstract: R2005300L
Text: R2005300L R2005300L Low Current 5MHz to 200MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R2005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.
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R2005300L
200MHz
OT-115J
R2005300L
DS101025
DIN45004B
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BF5Z
Abstract: SBF-5089 hemt Ee marking ee hemt SBF 5089 SBF5089 SBF-5089Z SBF50 sbf5089z marking code 827 sot89
Text: SBF-5089 Z SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar
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SBF-5089
500MHz,
OT-89
EDS-103413
SBF5089"
SBF5089Z"
BF5Z
hemt Ee
marking ee hemt
SBF 5089
SBF5089
SBF-5089Z
SBF50
sbf5089z
marking code 827 sot89
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Untitled
Abstract: No abstract text available
Text: SBF-5089 Z SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar
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SBF-5089
500MHz,
OT-89
EDS-103413
SBF5089â
SBF5089Zâ
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SUF-8533SR
Abstract: pHEMT operating junction temperature DS110718
Text: SUF-8533 SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier
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SUF-8533DC
SUF-8533
16-Pin,
SUF-8533
DS110718
SUF-8533SB
SUF-8533SQ
SUF-8533SR
SUF-8533TR7
pHEMT operating junction temperature
DS110718
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SUF-5033
Abstract: suf 5033
Text: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5 V supply. It
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SUF-5033
SUF-5033Low
16-Pin,
SUF-5033
DS090605
16-Pin
SUF-5033PCBA-410
suf 5033
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