laser diode 905nm
Abstract: No abstract text available
Text: LASER DIODE LC-50S-905D LC-50S-905D is 905nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-905D is a CW single mode injection semiconductor laser
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LC-50S-905D
LC-50S-905D
905nm
laser diode 905nm
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1064nm photodiode
Abstract: TO56 package laser diode to56 lcf106410s5n
Text: LASER DIODE LCF106410S5N LCF106410S5N is 1064nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LCF106410S5N is a CW single transverse mode injection
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LCF106410S5N
LCF106410S5N
1064nm
1064nm photodiode
TO56 package
laser diode to56
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1060 nm GaAs Laser Diode
Abstract: LC100-S
Text: LASER DIODE LC-100S-1060D LC-100S-1060D is AIGaAs/GaAS MQW structure fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-100S-1060D is a CW single mode injection semiconductor laser with built-in monitor photodiode to
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LC-100S-1060D
LC-100S-1060D
100s-1060d
1060 nm GaAs Laser Diode
LC100-S
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Untitled
Abstract: No abstract text available
Text: LASER DIODE LC-30S-750C LC-30S-750C is 750nm AIGaAs/GaAS MQW structure fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-30S-750C is a CW single mode injection semiconductor laser with built-in monitor photodiode to
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LC-30S-750C
LC-30S-750C
750nm
OT-148)
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Untitled
Abstract: No abstract text available
Text: LASER DIODE LC-50S-850C LC-50S-850C is 850nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-850C is a CW single transverse mode injection semiconductor laser with built-in monitor
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LC-50S-850C
LC-50S-850C
850nm
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injection laser diode
Abstract: laser diode 905nm
Text: LASER DIODE LC-10S-905D LC-10S-905D is 905nm AIGaAs/GaAS single quantum well structure fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-10S-905D light source is a CW single mode injection semiconductor laser with built-in monitor
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LC-10S-905D
LC-10S-905D
905nm
DifferentiaLC-10S-905D
injection laser diode
laser diode 905nm
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SM 850nm laser
Abstract: No abstract text available
Text: LASER DIODE LC850D6S-N/P LC850D6S-N/P is 850nm AIGaAs/GaAS MQW fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC850D6S-N/P is a CW single mode injection semiconductor
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LC850D6S-N/P
LC850D6S-N/P
850nm
850d6s
SM 850nm laser
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DVD laser head
Abstract: "dvd pickup"
Text: LASER DIODE LC-50S-660C/D-60X LC-50S-660C/D-60X is 660nm AlGaInP quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-660C/D-60X is a CW single mode injection
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LC-50S-660C/D-60X
LC-50S-660C/D-60X
660nm
DVD laser head
"dvd pickup"
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EYP-TPA-0780-01000-3006-CMT03-0000
Abstract: dbr laser
Text: Versiom 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0780-01000-3006-CMT03-0000 General Product Information Product Application 780 nm Tapered Amplifier
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EYP-TPA-0780-01000-3006-CMT03-0000
EYP-TPA-0780-01000-3006-CMT03-0000
dbr laser
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injection laser diode
Abstract: TAPERED
Text: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0735-00500-3006-CMT03-0000 General Product Information Product Application 735 nm Tapered Amplifier
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EYP-TPA-0735-00500-3006-CMT03-0000
injection laser diode
TAPERED
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"Laser Measurement"
Abstract: No abstract text available
Text: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0765-01500-3006-CMT03-0000 General Product Information Product Application 765 nm Tapered Amplifier
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EYP-TPA-0765-01500-3006-CMT03-0000
"Laser Measurement"
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Untitled
Abstract: No abstract text available
Text: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0915-01500-3006-CMT03-0000 General Product Information Product Application 915 nm Tapered Amplifier
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EYP-TPA-0915-01500-3006-CMT03-0000
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1060 nm GaAs Laser Diode
Abstract: 1060 nm semiconductor laser injection laser diode
Text: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-1060-00500-3006-CMT03-0000 General Product Information Product Application 1060 nm Tapered Amplifier
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EYP-TPA-1060-00500-3006-CMT03-0000
1060 nm GaAs Laser Diode
1060 nm
semiconductor laser
injection laser diode
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EYP-TPA-0795
Abstract: EYP-TPA-0795-00500-3006-CMT03-0000 0795 795nm laser diode lifetime
Text: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0795-00500-3006-CMT03-0000 General Product Information Product Application 795 nm Tapered Amplifier
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EYP-TPA-0795-00500-3006-CMT03-0000
EYP-TPA-0795
EYP-TPA-0795-00500-3006-CMT03-0000
0795
795nm
laser diode lifetime
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injection laser diode
Abstract: EYP-TPA-0830-01000-4006-CMT04-0000 830nm
Text: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0830-01000-4006-CMT04-0000 General Product Information Product Application 830 nm Tapered Amplifier
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EYP-TPA-0830-01000-4006-CMT04-0000
injection laser diode
EYP-TPA-0830-01000-4006-CMT04-0000
830nm
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EYP-TPA-0850-00500-3006-CMT03-0000
Abstract: 840 nm GaAs
Text: DATA SHEET EYP-TPA-0850-00500-3006-CMT03-0000 Version 0.90 2009-06-24 page 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL BAL General Product Information Product Application 850 nm Tapered Amplifier Spectroscopy C-Mount Package
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EYP-TPA-0850-00500-3006-CMT03-0000
EYP-TPA-0850-00500-3006-CMT03-0000
840 nm GaAs
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Untitled
Abstract: No abstract text available
Text: LASER DIODE INC 15E D I 5345=145 OODOHE1! 1 I LCW-10 LASER DIODE. LCW-1 OF r - Ÿ i - 0 5 - 830nm Multi-Mode CW Injection Laser FEATURES ► CW Operation ► Low Threshold Current
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LCW-10
830nm
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK itc /i 10 ]> tiectrouptics and Devices 3030bl0 0D00GSD MT1 H C A N A Laser Developmental Type Low Threshold CW-Operated Gallium Aluminum Arsenide Injection Laser • Typical Threshold Current — 75 mA ■ Continuous or Pulsed Operation at Room Temperature
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3030bl0
0D00GSD
OP-12
C86000E
C86000E
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2N3818
Abstract: laser rca 2l688 C86000E rca laser eg and g laser diode RCA Solid State S20 rca OP-12 laser diode module 820 nm
Text: G & G/CANADA/OPTOELEK IG ì> 3030blQ GDGDDSG 4T1 • CAN A Laser t ie c t r o u p t ic s i t c j i and Devices Developmental Type Low Threshold CW-Operated Gallium Aluminum Arsenide Injection Laser ■ Typical Threshold Current — 75 mA ■ Continuous or Pulsed Operation at Room Temperature
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3030blQ
OP-12
C86000E
2N3818
laser rca
2l688
rca laser
eg and g laser diode
RCA Solid State
S20 rca
laser diode module 820 nm
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dc powersupply
Abstract: transistor mesfet
Text: A T & T MELEC I C 5SE D • QDSDD2b DQDSS3D 1 ■ ^^9 Preliminary Data Sheet T -5 2 -/ 3 -0 7 LG1095A Laser Driver DESCRIPTION The LG1095A is a gallium-arsenide (GaAs) integrated circuit that provides an output current suitable tor modulating a laser diode in lightwave applications. The output pulse magnitude is controlled by direct current injection in the output stage current
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LG1095A
DS89-10GAS-RD
005005b
LC1135B
dc powersupply
transistor mesfet
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transistor D889
Abstract: D889 LG1095A ds89
Text: A T & T MELEC I C 5SE D • QDSDD2b DQDSS3D 1 ■ A T fiT Preliminary Data Sheet T -52-13-01 LG1095A Laser Driver DESCRIPTION The LG1095A is a gallium-arsenide (GaAs) integrated circuit that provides an output current suitable tor modulating a laser diode in lightwave applications. The output pulse magnitude is controlled by direct current injection in the output stage current
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Q05DQ5L
0002S30
LG1095A
enhancement/depletio53-2448
DS89-10GAS-RD
005005b
LC1135B
transistor D889
D889
ds89
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optical input to rca 5.1 output circuit
Abstract: rca ca3130 CA3130 peak detector GB41P2 fenwal ca3130 equivalent CLASS II LASER laser rca melcor PULSED LASER DIODE DRIVER
Text: E G & G/CANADA/OPTOELEK I f n • IDE D ■ 3030L.10 □□□0031 R Hi CANA i l fp11^state 7"" Solid State Emitters Electro Optics ■ * ■- r Developmental Type r C86046E 820 nm CW-Operated GaAIAs Injection Laser With Integral Optical Feedback Photodiode
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3030bl0
C86046E
-13x2
C86046E
optical input to rca 5.1 output circuit
rca ca3130
CA3130 peak detector
GB41P2
fenwal
ca3130 equivalent
CLASS II LASER
laser rca
melcor
PULSED LASER DIODE DRIVER
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Untitled
Abstract: No abstract text available
Text: E G & 6/ CANADA/O PTOE LEK n n lOE D • 3Q30bl0 D0DQQ31 R ■ CANA i l Solid state 7"" V/"i>7 Solid State Emitters Elec,ro ° P “CS Developmental Type C86046E 820 nm CW-Operated GaAIAs Injection Laser With Integral Optical Feedback Photodiode ■ Typical Threshold Current - 100 mA
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3Q30bl0
D0DQQ31
C86046E
L-1093
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LG1095AXA
Abstract: No abstract text available
Text: A T & T MELEC ESE D I C • 0 0 5 0 02b 000SS2M h ■ I j l AT& T Preliminary Data Sheet T - 5 Z - 1 3 -0 1 L G 1 0 9 5 A X A L a s e r D r iv e r DESCRIPTION The LG1095AXA is a gallium-arsenide (GaAs) integrated circuit used to modulate a laser diode in Gb/s lightwave applications.
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LG1095AXA
28-lead,
51AL230230,
DS89-09GAS-RD
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