INGAAS EPITAXX LINEAR Search Results

epitaxx

Contextual Info: EPITAXX INC 33b04Qb S 4E D EPITAXX DOODGT? M ETX 30 & 100MLA 64,128 & 256 T-m - ss InGaAs Multiplexed Linear Photodiode Arrays Description: EPITAXX ETX 30MLA 64,128 and 256 and ETX 100MLA 64 and 128 are linear arrays of 64,128 and 256 elements. The pixel cross-section of the ETX 30 MLA is 30x30 microns;

InGaAs Epitaxx linear

Abstract: D000G1 EPITAXX silicon photodiode array linear array photodiode element photodiode 256 elements silicon
Contextual Info: EP I T A X X INC 3 3 b 0 4 Qb OO OO CH ? 54E D EPITAXX M ETX30 & 100MLA 64,128 & 256 T M I-s s InGaAs Multiplexed Linear Photodiode Arrays Description: EPITAXX ETX 30MLA 64,128 and 256 and ETX 100MLA 64 and 128 are linear arrays of 64,128 and 256 elements. The pixel cross-section of the ETX 30 MLA is 30x30 microns;

Contextual Info: E P I T A X X INC SME 33bG40b QOGGGTS 0 D ÉEPITAXX ETX 30LA 8,16 & 32 InGaAs Linear Photodiode Arrays " T ^ l-S S Description: EPITAXX ETX 30LA 8 ,1 6 and 32 are linear arrays of 8,1 6 and 32 InGaAs photodiodes. The individual elements are 30 micrometer square and can be individually addressed. The

InGaAs Epitaxx

Abstract: InGaAs Epitaxx linear Photodiode-Array EPITAXX 16 Photodiode-Array linear array photodiode element Photodiode Array 32 element 30LA ETX30LA8 Photodiode Array linear
Contextual Info: EP I T A X X INC EME D 33bQ4Db OOQOGTS □ jI e p it a x x ETX 30 LA 8 , 1 6 & 3 2 InGaAs Linear Photodiode Arrays Description: EPITAXX ETX 30LA 8,16 and 32 are linear arrays of 8,16 and 32 InGaAs photodiodes. The individual elements are 30 micrometer square and can be individually addressed. The

ETX2000T5

Abstract: ETX3000T5 ETX500T EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity noise diode LARGE SURFACE AREA PHOTODIODE photodiode high responsivity high shunt resistance 1550 epitaxx InGaAs Epitaxx
Contextual Info: E TX 500T, ET X 100 0 T ERi iMAA ETX 2 0 0 0 T 5 , ET X 300 0 T5 m m « Large Area InGaAs Photodiodes Features • Hiqh responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical

EPITAXX

Abstract: EPITAXX ETX 300 ETX500T ETX3000T5 InGaAs Epitaxx linear 3000T5 ETX2000T5 InGaAs 1550 photodiode transimpedance amplifier EPITAXX ETX 75 inGaAs photodiode 1550
Contextual Info: =ss ETX 5001V ETX 1000T ETX 2000T5, ETX 3000T5 ERl iAAA Large Area InGaAs Photodiodes Features • High responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical

EPITAXX

Abstract: ETX505Q large area quadrant photodiode ETX100TL-ST ingaas LED epitaxx quadrant ETX1000T InGaAs Epitaxx linear T05 Package ETX300
Contextual Info: EPITAXX INC EHE D 33bG40b QGGGQbB =1 r -^ - o i Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,

EPITAXX

Abstract: 745 diode dual ingaas photodiode InGaAs Epitaxx EPM schema EPM-745
Contextual Info: Forward Path CATV EPM 745 Low Distortion, Low Capacitance InGaAs PIN Photodiode for 860 MHz AM CATV Features • • • • • Low Intermodulation distortion High responsivity Low capacitance Low back reflection Linear with high input optical power to +5 dBm

epitaxx

Abstract: large area quadrant photodiode ETX1300RST ETX75FJ
Contextual Info: 24E D • 33bG40b GGGGObB =1 Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,

ingaas LED

Abstract: EPITAXX ETX1000T InGaAs quadrant large area quadrant photodiode satellite l300 T05 Package ETX25B InGaAs Epitaxx ETX505Q
Contextual Info: EPITAXX INC 5QE D • 33b04Qb OGQOlBb T H E P X 7^//^// Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,

InGaAs photodiode

Abstract: LA512 linear array 50 pitch
Contextual Info: ETX 100MLA256 ETX 500MLA256 ETX 100MLA512 EFiTÂXX ETX“ °"“ 2“ Multiplexed Linear InGaAs Photodiode Array Features • Linear 256 and 512 elements on 50 |im pitch ■ 30 im x 100 |jm or 25 |im x 500 jam pixels ■ Near Infrared response from 800 to ! 700 nm

Photodiode Array linear

Abstract: photodiode linear array Photodiode-Array photodiode 256 elements linear array photodiode element 16 Photodiode-Array InGaAs photodiode InGaAs Epitaxx linear photodiode 512 elements
Contextual Info: EPI I M ETX 10 0 M L A 2 5 6 ETX 5 0 0 M L A 2 5 6 ETX 100IM LA512 Ü Ü : Multiplexed Linear InGaAs Photodiode Array Features • Linear 256 and 5 12 elements on 50 jam pitch ■ 30 im x 100 |jm or 25 (am x 500 jam pixels ■ Near Infrared response from 800 to ! 700 nm

epitaxx

Abstract: DDG0277 ETX 40 EPITAXX ETX 75
Contextual Info: ETX-GR Series N ear-Infrared Room Tem p erature In G aA s P h o to d e te cto rs fo r 1 .0 - 2 .6 |im O p e ra tio n Features • Photovoltaic ■ Low noise for room temp, operation ■ Optimized for three specific wavelengths 'vT ■ High quantum efficiency

EPITAXX

Abstract: EPITAXX ETX 75 EPITAXX ETX 100T GR 2.2 UUU0277 InGaAs Epitaxx ETX 40
Contextual Info: EPI ETX-GR Series Near-Infrared Room Tem perature InGaAs P h otod etectors fo r 1.0 - 2 .6 jxm O p e ra tio n Featu res • Photovoltaic ■ Low noise for room temp, operation ■ Optimized for three specific wavelengths 'vT ■ High quantum efficiency V.

EPITAXX

Abstract: Ir photodiodes ETX75FJ-SLR 0491 ETX75FC InGaAs Epitaxx
Contextual Info: 54E D EPITAXX INC „ 90-24A tF Release Date: îMMEDïATE Contact: Karen Kinsman • 33bG4Q a QODGiab ? ■ EPX Press Release EPITAXX ANNOUNCES AVAILABILITY OF LOW BACK REFLECTION PHOTODIODES FOR ANALOG VIDEO AND INSTRUMENTATION -x ~ ‘~ EPITAXX offers a modified version of its standard

DIODE T5

Abstract: ETX10LIN24-T5 ETX20LIN22-T5 ETX 40 epitaxx 20LIN22-T5
Contextual Info: E T X 10L IN 24-T 5 E T X 20L IN 22-T 5 Large A rea InGaAs PIN P h otod iod es L in e a r a b o v e 2 0 dB m I n p u t P o w e r Features • Chip centered to ±125 um relative to header Electro-Optical ■ InGaAs PIN Photodiode w ith high responsivity at 1300 and 1550 nm

epitaxx

Abstract: InGaAs Epitaxx linear ETX1300RST ETX1300FC
Contextual Info: EP I T A X X INC 50E D • 33b040b DGGGIBb T H E P X 7=VAy/ Telecommunications: The Local Loop E P IT A X X has been a p io n eer in developing packaging w hich supports high volum e production while reducing com ponent costs. E P IT A X X receptacled photodiodes, laser diodes, a n d L E D s offer high reliability,

EPITAXX ETX 75

Abstract: EPITAXX EPITAXX ETX 300 InGaAs Epitaxx linear EPITAXX ETX 75 F J S LR EDL1300RST ETX100TL-ST ETX1300RST
Contextual Info: EPITAXX INC 24E i> m 33^040^ Qoaaiaa □ • epx EPÏTAXtf INTRODUCES 1300 NM LASERS, ELEDs, AND PHOTODIODES IN STTM ACTIVE DEVICE MOUNTS T -H I-O* # 90-34 Release Date: Contact: IMMEDIATE Karen Kinsman Sales Manager Press Release EPITAXX has expanded its active receptacled devices to

InGaAs Epitaxx APD

Abstract: avalanche photodiodes InGaas APD detector, 1550 sensitivity epitaxx APD photovoltaic receiver 1550 InGaAs apd photodiode Si apd photodiode 10 gb APD receiver apd 1550 rise time, dark, capacitance EPITAXX erm 577
Contextual Info: Erik Jonsson School of Engineering & Computer Science The University of Texas at Dallas OPTICAL DETECTORS AND RECEIVERS Notes prepared for EE 6310 by Professor Cyrus D. Cantrell August–December 2003 c C. D. Cantrell 06/2003 The University of Texas at Dallas

PIN Photodiode For CATV Receiver

Contextual Info: ERM723FJ-S High Linearity 860 MHz AM CATV Optical Receiver Module Preliminary Information Features • High linearity InGaAs PIN photodiode ■ Low distortion, low noise GaAs 1C amplifier ■ -65 dBcCSO, -70 CTB at +3 dBm ■ 7 pWA H2 noise equivalent power

InGaAs Epitaxx APD

Abstract: InGaAs apd photodiode Photodiode apd high sensitivity InGaas PIN photodiode, 1550 sensitivity APD bias gain avalanche photodiode receiver InGaAs Epitaxx linear APD, applications, bias supply receiver avalanche 1550 fiber 2.5 10 gb APD receiver
Contextual Info: Product Bulletin ERM 537/547 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω All specifications without connector. Parameter Responsivity APD PIN Dark Current

InGaAs Epitaxx EPM

Abstract: JDS Uniphase photodiode epm 605 606L EPM605LL JDS Uniphase photodiode epm EPITAXX 605 EPITAXX PIN Photodiode 4 Ghz 1550 nm pin photodiode 1550 sensitivity EPITAXX EPM
Contextual Info: Product Bulletin EPM 6xx Series C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes 605 606 613 650 Preliminary Specifications C-Band Monitor L-Band Monitor Pass Band Monitor General Purpose Monitor Conditions unless noted : Temperature = 25°C, VR = 5V