INFRARED TEMPERATURE MEASURE DIODE Search Results

Contextual Info: PRESSURE AND INFRARED INSTRUMENTATION OS540 Infrared Thermometer Laser Sight Model Configurations Ideal Applications: Diesel and Fleet Maintenance, Electrical, Asphalt, Measure Ink and Dryer Temp. Screen Printing , HVAC/R Automotive, In-Process Temperature Measurement, Fire and

Contextual Info: INFRARED OS540 Infrared Thermometer OS540 Ideal Applications: Diesel and Fleet Maintenance, Electrical, Asphalt, Measure Ink and Dryer Temp. Screen Printing , HVAC/R Automotive, In-Process Temperature Measurement, Fire and Safety, Plastics Molding, Marine and RV, Food Safety

L8446

Abstract: L8446-04 L8446-06 LLD1010E01 CW laser diode
Contextual Info: INFRARED CW LASER DIODE L8446 SERIES Figure1 Radiant Output Power vs. Forward Current Typ. (Tc=25˚c) (Tc=25˚c) PRELIMINARY DATA 100 RELATIVE RADIANT OUTPUT POWER (%) 1.0 0.5 High optical power of 1W under CW operation 80 60 FEATURES High optical power : 1W

Contextual Info: OPTOELECTRONICS INTRODUCTION INFRARED-LIGHT-EMITTING DIODES Phototriacs The infrared—light—emitting diode emits radiation in the near infrared region when forward bias current Ip flows through the PN junction. The light output power (P0) is a function of the drive current (Ip) and is measured in milli­

Contextual Info: O r i Ü c L l C I R o H IC S INTRODUCTION INFRARED-LIGHT-EMITTING DIODES Phototriacs The infrared—light—emitting diode emits radiation in the near infrared region when forward bias current Ip flows through the PN junction. The light output power (Po) is a

BPW34 application note

Contextual Info: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°

lux meter chip

Abstract: IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g
Contextual Info: VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Peak wavelength: λp = 850 nm • High reliability

BPW41 circuit application

Abstract: OSRAM IR emitter
Contextual Info: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability

BPW34 osram

Abstract: wi41g BPW34 application note
Contextual Info: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm

OSRAM IR emitter

Abstract: BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter
Contextual Info: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability

Contextual Info: KTLP250 Series 8PIN IGBT GATE DRIVE PHOTOCOUPLER cosmo Description Schematic The KTLP250 series consists of an GaAlAs Light emitter diode and an integrated. This unit is 1 8 2 7 3 6 4 5 8-lead DIP package. KTLP250 series is suitable for gate driving circuit of IGBT or power

Contextual Info: O K I electronic components 0 LP226 Infrared LED with Collimator Lens GENERAL DESCRIPTION The OLD226 is a high-output GaAlAs infrared light emission micro-diode sealed with collimator lens in a TO-18 metal can package. High uniform ity of light distribusion and collimator lens enable

CLED291A

Abstract: CLED291B CLED291C
Contextual Info: 40E 3> FASCO INDS/ SENISYS SMTiTBâ 000131Ö t • I SENI ICEEESai CLED291 Series Aluminum Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. 880 nm wavelength T-13/< package wide radiation angla

1100C

Abstract: CLED166A CLED166B CLED166C CLED166D CLT506
Contextual Info: FASCO INDS/ SENISYS 4DE D 34=1=3730 0DG1314 E M SENI icHzzaaafl CLED166 Series T4UI Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • § • Storage to + 100“C

0ld222

Abstract: rotary potentiometer with led OPA2048CA
Contextual Info: E2P0020-27-: O K I electronic components OLD226 Infrared LED with Collimator Lens GENERAL DESCRIPTION The OLD226 is a high-output GaAlAs infrared light emitting diode sealed with a collimator lens in a T O l 8 metal can package. High uniformity of the light distribution and the collimator lens enable

Contextual Info: KTLP350 Series 8PIN IGBT GATE DRIVE PHOTOCOUPLER cosmo Description Schematic The KTLP350 series consists of an GaAlAs light emitter diode and an integrated. This unit is 1 8 2 7 3 6 4 5 8-lead DIP package. KTLP350 series is suitable for gate driving circuit of IGBT or power

Contextual Info: FASCO INDS/ SENISYS 40E 3> m 34T=i73a 0001316 T El SEN! CLED291 Series Aluminum Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage Temperature .to + 100°G

BPW34 smd

Abstract: smd resistor 8606 BPW34 application note
Contextual Info: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability

BPW34 application note

Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability

bpw 75

Abstract: near IR photodiodes with daylight filter BPW 23 nf ir headphone BPW34 application note
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability

quantum dot

Abstract: CLT400 CLED400 CLED400A CLED400B CLED400C
Contextual Info: FASCO INKS/ SE NI SY S 40E 34^730 D D G Q 1 3 2 Q fi S E N I i iiraym aii • CLED400 Series Gallium Arsenide Infrared Emitting Diodes 1 X 0 .0 8 5 C2.163 r 0 .0 7 6 C1.933 L DIMENSIONS ARE IN INCHES CHILLINETERSJ 0 .4 2 5 [1 0 ,8 0 ] 0 .3 2 5 C 8 .2 6 Í

c3781

Abstract: CLED191A CLED191B CLED191C CLT590 L004 2s43
Contextual Info: * FASCO INDS/ SE N I S Y S 34^730 40E D 000131b hr^SENI IEEEQI3B CLED191 Series m -U Gallium Arsenide Infrared Emitting Diodes Features Absolute M axim um Ratings Ta = 25°C unless otherwise stated. • • • • Storage Temperature. -40°C to +100°C

BPW34 application note

Abstract: APPLICATION NOTE BpW34 BPW41 remote control
Contextual Info: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability

Contextual Info: 0.O PT EK Infrared Emitting Diodes Optek remains unchallenged as the industry’s most complete high quality source for infrared emitters. The latest state-of-the-art solution grown epitaxial techniques are used to produce the high quality G aAs and GaAIAs diode material required to make Optek infrared emitting