INFRARED RADIATION PROTOCOL Search Results
INFRARED RADIATION PROTOCOL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation. |
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BPW96 BPW96 2002/95/EC 2002/96/EC BPW96B BPW96C 08-Apr-05 | |
Contextual Info: BPV10 Vishay Semiconductors Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T-1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features |
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BPV10 BPV10 2002/95/EC 2002/96/EC 08-Apr-05 | |
BPV10Contextual Info: BPV10 Vishay Semiconductors Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T-1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features |
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BPV10 BPV10 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: TEMD5010 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5010 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area, detecting visible and near infrared radiation. |
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TEMD5010 TEMD5010 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: BPV10 Vishay Semiconductors Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T-1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features |
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BPV10 BPV10 2002/95/EC 2002/96/EC 18-Jul-08 | |
Contextual Info: TEMD5010 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5010 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area, detecting visible and near infrared radiation. |
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TEMD5010 TEMD5010 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05 | |
TEMT2100
Abstract: 8309 BR 8550 8239 br 8550 c Telefunken Phototransistor transistor 8550 smd
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TEMT2100 TEMT2100 D-74025 15-Jul-96 8309 BR 8550 8239 br 8550 c Telefunken Phototransistor transistor 8550 smd | |
Contextual Info: TEMD5020 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5020 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 5.7 mm2 sensitive area, detecting visible and near infrared radiation. |
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TEMD5020 TEMD5020 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
TEMD5010
Abstract: TEMD5110
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TEMD5010 TEMD5010 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC D-74025 13-Jan-05 TEMD5110 | |
TEMD5020
Abstract: TEMD5110 LIFE 8423
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TEMD5020 TEMD5020 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC D-74025 20-Jan-05 TEMD5110 LIFE 8423 | |
BPV10Contextual Info: BPV10 Vishay Semiconductors Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T-1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features |
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BPV10 BPV10 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
Contextual Info: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation. |
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BPW96 BPW96 2002/95/EC 2002/96/EC BPW96B BPW96C 18-Jul-08 | |
Contextual Info: TEMD5020 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5020 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area, detecting visible and near infrared radiation. |
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TEMD5020 TEMD5020 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: TEMD5020 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5020 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area, detecting visible and near infrared radiation. |
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TEMD5020 TEMD5020 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05 | |
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8309
Abstract: br 8550 NPN Transistor 8239 BR 8550
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TEMT2200 TEMT2200 D-74025 15-Jul-96 8309 br 8550 NPN Transistor 8239 BR 8550 | |
Contextual Info: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815 |
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BPW85 BPW85 2002/95/EC 2002/96/EC BPW85A BPW85B BPW85C | |
TEMD5010
Abstract: TEMD5110
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TEMD5010 TEMD5010 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC D-74025 08-Mar-05 TEMD5110 | |
ic 8253
Abstract: BPV11
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BPV11 BPV11 D-74025 16-Oct-96 ic 8253 | |
sn 8406Contextual Info: TEMD5020 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5020 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area, detecting visible and near infrared radiation. |
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TEMD5020 TEMD5020 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC D-74025 12-Aug-05 sn 8406 | |
450 nm
Abstract: 8436 8439 BPV10
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BPV10 BPV10 78mm2 D-74025 20-May-99 450 nm 8436 8439 | |
phototransistor S351P
Abstract: 8239 8582
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S351P S351P D-74025 15-Jul-96 phototransistor S351P 8239 8582 | |
Vishay Telefunken Phototransistor
Abstract: BPV11
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BPV11 BPV11 D-74025 20-May-99 Vishay Telefunken Phototransistor | |
8464
Abstract: S153P
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S153P S153P 18-Jul-08 8464 | |
BPV11Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. |
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BPV11 BPV11 2002/95/EC 2002/96/EC 08-Apr-05 |