QEB363
Abstract: No abstract text available
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
|
Original
|
QSB363
QSB363
QEB363
QEB373
|
PDF
|
Infrared Phototransistor
Abstract: c 5802 7402 ic configuration QSB363 QEB363 QEB373 IC 7402
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
|
Original
|
QSB363
QSB363
QEB363
QEB373
Infrared Phototransistor
c 5802
7402 ic configuration
QEB373
IC 7402
|
PDF
|
QEB363
Abstract: QEB373 QSB363 QSB363C Infrared Phototransistor
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
|
Original
|
QSB363C
QSB363
QEB363
QEB373
QSB363C
QEB373
Infrared Phototransistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
|
Original
|
QSB363C
QSB363
QEB363
QEB373
QSB363C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QSB363 / QSB363GR / QSB363YR / QSB363ZR Subminiature Plastic Silicon Infrared Phototransistor Features Description • • • • • • • • The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. NPN Silicon Phototransistor
|
Original
|
QSB363
QSB363GR
QSB363YR
QSB363ZR
QEB363
QEB373
QSB363
QSB363GR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3.5x2.8mm PHOTOTRANSISTOR Part Number: AA3528P3S Description Features z Mechanically and spectrally matched to the infrared emitting Made with NPN silicon phototransistor chips. LED lamp. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
|
Original
|
AA3528P3S
2000pcs
DSAL0864
SEP/01/2012
SAL0864
|
PDF
|
QSB363
Abstract: QEB363 QEB373 "infrared phototransistor"
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor • Daylight Filter ■ Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package
|
Original
|
QSB363
QEB363
QEB373
QSB363
QEB373
"infrared phototransistor"
|
PDF
|
7402 ic configuration
Abstract: QSB363
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor • Daylight Filter ■ Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package
|
Original
|
QSB363
QEB363
QEB373
7402 ic configuration
|
PDF
|
QEB363
Abstract: QEB373 QSB363C Infrared Phototransistor 01060
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°
|
Original
|
QSB363C
QEB363
QEB373
QSB363C
QEB373
Infrared Phototransistor
01060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KT1600 Series 4PIN LSOP PHOTOTRANSISTOR PHOTOCOUPLER cosmo Description Schematic 4 1 The KT1600 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a 3 2 phototransistor detector. They are packaged in a 4 pin
|
Original
|
KT1600
5000Vrms
69P10002
|
PDF
|
QEB363
Abstract: No abstract text available
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°
|
Original
|
QSB363C
QEB363
QEB373
QSB363
|
PDF
|
AA3528F3S
Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.
|
Original
|
AA3528F3S
1500pcs
DSAL0863
APR/09/2011
AA3528F3S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.
|
Original
|
AA3528F3S
1500pcs
DSAL0863
APR/09/2011
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
|
Original
|
AA3528F3S
2000pcs
DSAL0863
MAR/02/2013
|
PDF
|
|
|
AA3528F3S
Abstract: smd diode f3
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.
|
Original
|
AA3528F3S
1500pcs
DSAL0863
SEP/06/2010
W2010
AA3528F3S
smd diode f3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
|
Original
|
AA3528F3S
2000pcs
DSAL0863
SEP/01/20120863
SEP/01/2012
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815
|
Original
|
BPW85
BPW85
2002/95/EC
2002/96/EC
BPW85A
BPW85B
BPW85C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRARED EMITTING DIODE PRELIMINARY SPEC L-1544SF7C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO THE PHOTOTRANSISTOR. SF7 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. WATER CLEAR LENS AVAILABLE HIGH POWER OUTPUT.
|
Original
|
L-1544SF7C
DSA2914
OCT/10/2003
L-1544SF7C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815
|
Original
|
BPW85
BPW85
2002/95/EC
2002/96/EC
BPW85A
BPW85B
BPW85C
|
PDF
|
WP7113SF4C
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRARED EMITTING DIODE Part Number: WP7113SF4C Features Description z Mechanically and spectrally matched to the phototransistor. SF4 Made with Gallium Aluminum Arsenide Infrared Emit- z RoHS compliant. ting diodes. Package Dimensions Notes:
|
Original
|
WP7113SF4C
DSAF2423
APR/09/2011
WP7113SF4C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLP813 TO SH IBA TOSHIBA PHOTO-INTERRUPTER INFRARED LED + PHOTOTRANSISTOR TLP81 3 IMAGE SCANNERS, HANDHELD COPIERS COPIERS, FAX MACHINES PHOTO-ELECTRIC COUNTERS FOR DETECTING VARIOUS OBJECTS The TLP813 photo-interrupter combines a GaAs infrared LED with an Si phototransistor, and is
|
OCR Scan
|
TLP813
TLP81
TLP813
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Sidelooker Phototransistor TECHNOLOGIES QSE112/113/114 DESCRIPTION The QSE11X family is a silicon phototransistor encapsulated in a wide angle, infrared transparent, dark blue, plastic sidelooker shell package. FEATURES * Tight production distribution with 3:1
|
OCR Scan
|
QSE112/113/114
QSE11X
EE113
QEE123
|
PDF
|
Untitled
Abstract: No abstract text available
Text: . u PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT2E DESCRIPTION PACKAGE DIMENSIONS The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared em itting diode. FEATURES & APPLICATIONS JSir\ 1.9 TYP — 4.06 3ÜT 4_
|
OCR Scan
|
E90700
ST1603A
C207S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
|
OCR Scan
|
74tibfiSl
Q003541
MCT274
MCT274
C2090
C2079
MCT9001
|
PDF
|
