INFRARED LED CHIP Search Results

GaAs 850 nm Infrared Emitting Diode

Abstract: TLN217
Contextual Info: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.

TLN217

Contextual Info: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.

TLN217

Contextual Info: TLN217 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN217(F) Lead Free Product Infrared Light-Emitting Diode for Still Camera Unit: mm Light Source for Auto Focus The TLN217(F) is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.

silicon carbide LED

Abstract: silicon carbide led green Gallium phosphide arsenic
Contextual Info:  LED Color Chart LEDtronics LED Chip Wavelength Code Code nm Color Name Fwd Voltage Intensity Vf @ 20mA 5mm LEDs Viewing Angle LED Dye Material 941 IR941 940 Infrared 1.5 16mW @ 50mA 15º 881 IR881 880 Infrared 1.7 18mW @ 50mA 15º 851 IR851 850 Infrared

led green Gallium phosphide

Abstract: ir941 IR851 silicon carbide AG10K silicon carbide LED Gallium phosphide
Contextual Info: LED Color Chart LEDtronics LED Chip Wavelength Code Code nm Color Name Fwd Voltage Intensity Vf @ 20mA 5mm LEDs Viewing Angle LED Dye Material 941 IR941 940 Infrared 1.5 16mW @ 50mA 15º 881 IR881 880 Infrared 1.7 18mW @ 50mA 15º 851 IR851 850 Infrared 1.7

ELM-910-927

Abstract: power led heat sink ELM Technology D-12555
Contextual Info: LED Module ELM-910-927 Preliminary 6/22/2007 Wavelength Type Technology Case Infrared LED Array Module DDH FR4/Cu-plated Description 24 20,6 Infrared LED-Array consisting of five high power LED connected in series. Chipassembly covered with plastic lenses.

ELJ-950-228B

Contextual Info: Infrared LED - Module ELJ-950-228B Radiation Type Technology Case Infrared 20 degrees AlGaAs/GaAs plastic lens, metal case Description Outline: H=13,7 mm ± 0,5 13 High-power infrared-LED module, double-hetero AlGaAs/GaAs structure, six chips are soldered

TLN212

Contextual Info: TLN212 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera Unit: mm Light Source For Auto Focus • Optical radiation of current confining LED chip is condensed by a resin lens. •

ELJ-810-228B

Abstract: IR LED 810 nm
Contextual Info: Infrared LED - Module ELJ-810-228B Radiation Type Technology Case Infrared 20 degrees AlGaAs/AlGaAs plastic lens, metal case Description Outline: H=13 mm ± 0,5 4 13 High-power infrared-LED module, double-hetero AlGaAs structure, six chips are soldered on metal header, fast

ELJ-810-228B

Contextual Info: Infrared LED - Module ELJ-810-228B Radiation Type Technology Case Infrared 20 degrees AlGaAs/AlGaAs plastic lens, metal case Description Outline: H=13 mm ± 0,5 13 High-power infrared-LED module, double-hetero AlGaAs structure, six chips are soldered on metal header, fast

ELJ-810-248B

Abstract: H118 IR LED 810 nm ELJ-810-248
Contextual Info: Infrared LED - Module ELJ-810-248B Radiation Type Technology Case Infrared 40 degrees AlGaAs/AlGaAs plastic lens, metal case Description Outline: H=11.8 mm ± 0,5 13 High-power infrared-LED module, double-hetero AlGaAs structure, six chips are soldered on metal header, fast

TLN210

Contextual Info: TLN210 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN210(F) Lead Free Product Infrared Light-emission Diode For Still Camera Light Source For Auto Focus Unit: mm • Optical radiation of current confining LED chip is condensed by a resin lens. • High output

IR LED 810 nm

Abstract: "Infrared LED" k 2545 ELJ-810-248B datasheet LED infrared str 450 a ccd lens H118 infrared transistor data sheet IR LED infrared led
Contextual Info: Infrared LED - Module ELJ-810-248B Radiation Type Technology Case Infrared 40 degrees AlGaAs/AlGaAs plastic lens, metal case Description Outline: H=11,8 mm ± 0,5 11 2,0 11 High-power infrared-LED module, double-hetero AlGaAs structure, six chips are soldered on metal header, fast

Contextual Info: ELJ-920-228B Infrared LED - M odule Radiation Type Technology Case Infrared 2 0 degrees A IG aAs/AIG aAs p lastic lens, m etal case Description High-power infrared-LED module, double-hetero AIGaAs structure, six chips are soldered on metal header, fast switching time

Contextual Info: Infrarot-LED mit hoher Ausgangsleistung High Power Infrared LED SFH 4255 SFH 4255 preliminary data / vorläufige Daten Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung • Emissionswellenlänge typ. 850nm • High Power Infrared LED

ELJ-950-228B

Contextual Info: Infrared LED – Module Preliminary data ELJ-950-228B Radiation Type Technology Case Infrared 20 degrees AlGaAs/GaAs/GaAs plastic lens, metal case Description Outline: H=13.7± 0.5 mm 4 11 High-power infrared-LED module, double-hetero AlGaAs/GaAs/GaAs structure, six chips are soldered on

L2656

Abstract: L9337
Contextual Info: LED Infrared LED L9337 High power LED for optical switches L9337 is an infrared LED developed for optical switches. Because a high-power LED chip is mounted, L9337 provides higher radiant output power than previous devices, yet is available at a low cost due to the improved manufacturing process. L9337 also achieves a directivity that

L2656

Abstract: L9337
Contextual Info: LED Infrared LED L9337 High power LED for optical switches L9337 is an infrared LED developed for optical switches. Because a high-power LED chip is mounted, L9337 provides higher radiant output power than previous devices, yet is available at a low cost due to the improved manufacturing process. L9337 also achieves a directivity that

"Infrared LED"

Abstract: ingaas LED L8245
Contextual Info: LED Infrared LED L8245 Peak emission wavelength: 1.65 µm L8245 is a long-wavelength infrared LED using an InGaAs chip. The peak emission occurs at a wavelength near the methane gas absorption band, making L8245 ideal for a light source for methane gas detection.

L8245

Contextual Info: LED Infrared LED L8245 Peak emission wavelength: 1.65 µm L8245 is a long-wavelength infrared LED using an InGaAs chip. The peak emission occurs at a wavelength near the methane gas absorption band, making L8245 ideal for a light source for methane gas detection.

ingaas LED

Abstract: methane L8245 SE-171 LED infrared
Contextual Info: LED Infrared LED L8245 Peak emission wavelength: 1.65 µm L8245 is a long-wavelength infrared LED using an InGaAs chip. The peak emission occurs at a wavelength near the methane gas absorption band, making L8245 ideal for a light source for methane gas detection.

L8245

Abstract: SE-171
Contextual Info: LED Infrared LED L8245 Peak emission wavelength: 1.65 µm L8245 is a long-wavelength infrared LED using an InGaAs chip. The peak emission occurs at a wavelength near the methane gas absorption band, making L8245 ideal for a light source for methane gas detection.

Contextual Info: epitex LED CHIP ＬＥＤ C910-35 Opto-Device & Custom LED SPECIFICATION OF INFRARED LED CHIP C910-35 [INFRARED] 1 Commodity Type and Physical Characteristics. 1. Material GaAlAs 2. Electrode Top Side N cathode )side ：Au Alloy Bottom Side P ( anode )side ：Au Alloy

L8506

Abstract: SE-171 LED infrared
Contextual Info: LED Infrared LED L8506 LED emitting collimated light When an LED is used for optical encoders, it must emit a uniform, small spot light. L8506 is an infrared LED that emits such a light beam collimated by the combination of an aspheric lens. L8506 uses a non-confined structure chip that does not show an abrupt deterioration often