SMR 4000
Abstract: Q62702-P1825 20MS Q62702-P5000 Q62702-P331
Text: IR-LUMINESZENZDIODEN INFRARED EMITTERS 1. Emitter in SMT Package 1. Emitters in SMT λpeak ϕ deg. Ie VF tr nm mW/Sr V ns SFH 4000 950 ± 80 > 1.6 typ. 3.5 at IF = 100 mA 1.5 tP = 20 ms (≤ 1.8) 10 Q62702-P5524 SFH 4010 950 ± 80 > 1.0 (typ. 2.5) at IF = 100 mA
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Q62702-P5524
Q62702-P5525
Q62702-Package
Q62702-P5319
Q62702-P5320
SMR 4000
Q62702-P1825
20MS
Q62702-P5000
Q62702-P331
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QS18VN6LV
Abstract: Infrared Receiver 3000 nm QS18VP6CV45 QS18VP6F infrared led receiver QS18VP6LAF250 QS18VP6laf QS18VN6LP QS18VN6 QS18VN6D
Text: 1507-2012:QuarkCatalogTempNew 9/10/12 10:15 AM Page 1507 17 Photoelectric Sensors TEST & MEASUREMENT 18 mm Universal Photoelectric Sensors — QS18 Series Applications: ᭤ Package Handling ᭤ Pallet Detection ᭤ Conveyor Jam ᭤ Baggage Handling ᭤ Bottle Conveying
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QS18WE
Q20NR
Q20PR
Q20NLV
Q20PLV
Q20NLP
Q20PLP
Q20ND
Q20PD
Q20NDL
QS18VN6LV
Infrared Receiver 3000 nm
QS18VP6CV45
QS18VP6F
infrared led receiver
QS18VP6LAF250
QS18VP6laf
QS18VN6LP
QS18VN6
QS18VN6D
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TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS SELECTOR GUIDE w w w. v i s h a y. c o m INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS Vishay Semiconductors Infrared Emitters
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VMN-SG2123-1010
TSUS3400
VCNL4000
VISHAY VSLB3940 DATASHEET
smartphone proximity sensor
TEMT6200FX01
BPW41N
infrared emitters and detectors
TCND5000
TCRT1010
TEMD6010FX01
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors
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VCNL4010
VCNL4020
VCNL3020
VMN-SG2123-1404
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors Reflective Sensors – Analog Tr a n s m i s s i v e S e n s o r s – A n a l o g
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VCNL4020X01
VCNL3020
AEC-Q101
VCNL4010
VCNL4020
VMN-SG2123-1502
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APPLICATION CIRCUIT OF TSAL4400
Abstract: smd 0306 package TSKS5400S TSMF3700 TSAL5100 "Photo Interrupter" Application Note TSAL4400 TSHA4400 TSKS5400 TSML3710
Text: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AGING OF INFRARED EMITTER COMPONENTS TECHNICAL INFORMATION w w w. v i s h a y. c o m Aging of Infrared Emitter Components INTRODUCTION TYPICAL DEGRADATION OF RADIANT POWER AFTER 4000 h OPERATION DEVICE AGING AND DEVICE
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VHN-TI2302-0306
APPLICATION CIRCUIT OF TSAL4400
smd 0306 package
TSKS5400S
TSMF3700
TSAL5100
"Photo Interrupter" Application Note
TSAL4400
TSHA4400
TSKS5400
TSML3710
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tsta7500
Abstract: No abstract text available
Text: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AGING OF INFRARED EMITTER COMPONENTS TECHNICAL INFORMATION w w w. v i s h a y. c o m Aging of Infrared Emitter Components INTRODUCTION TYPICAL DEGRADATION OF RADIANT POWER AFTER 4000 h OPERATION DEVICE AGING AND DEVICE
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VHN-TI2302-0306
tsta7500
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Untitled
Abstract: No abstract text available
Text: 2012-08-17 GaAlAs Infrared Emitter 880 nm and green GaP-LED (565 nm) GaAlAs Infrarot Sender (880 nm) und grüne GaP-LED (565 nm) Version 1.0 (not for new design) SFH 7222 Features: Besondere Merkmale: • SMT package with IR emitter (880 nm) and green emitter (565 nm)
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D-93055
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BPW85C
Abstract: 416 npn phototransistor 8277 bpw 104 BPW85 BPW85A BPW85B Silicon NPN Phototransistor
Text: BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW85A,
BPW85B,
BPW85C
2002/95/EC
2002/96/EC
BPW85
18-Jul-08
BPW85C
416 npn phototransistor
8277
bpw 104
BPW85A
BPW85B
Silicon NPN Phototransistor
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Infrared emitter
Abstract: "Photo Interrupter" TSAL4400 "Photo Interrupter" Application Note APPLICATION CIRCUIT OF TSAL4400 smd diode DH TSHA4400 TSKS5400 TSMF3700 TSML3710
Text: VISHAY Vishay Semiconductors Aging of Infrared Emitter Components Typical degradation of radiant power after 4000 h operation Relative Radiant Power Introduction Over its lifetime, an infrared emitter gradually loses its radiant power. This type of aging or degradation has
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22-Apr-04
Infrared emitter
"Photo Interrupter"
TSAL4400
"Photo Interrupter" Application Note
APPLICATION CIRCUIT OF TSAL4400
smd diode DH
TSHA4400
TSKS5400
TSMF3700
TSML3710
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Untitled
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und grüne GaP-LED (565 nm) GaAlAs-Infrared-Emitter (880 nm) and green GaP-LED (565 nm) SFH 7222 Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und grünem Sender (565 nm) • Geeignet für SMT-Bestückung
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GPLY6025
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4557 Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung • Kurze Schaltzeiten • High Power Infrared LED
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OHF00580
Abstract: IR LED infrared led 690 GPL06025
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und grüne GaP-LED (565 nm) GaAlAs-Infrared-Emitter (880 nm) and green GaP-LED (565 nm) SFH 7222 Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und grünem Sender (565 nm) • Geeignet für SMT-Bestückung
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OHF00581
OHF00582
GPL06025
OHF00580
IR LED infrared led 690
GPL06025
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 This data sheet is under PCN-revision (OS-PCN-2009-021-A2). Not to be used for design-in. PCN data sheet can be provided on request.
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OS-PCN-2009-021-A2)
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4252 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4547 Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung • Kurze Schaltzeiten • High Power Infrared LED
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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GPLY6880
Abstract: OHLA0687
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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OSRAM IR emitter
Abstract: infrared temperature measure datasheet LED infrared high power infrared LEd infrared LED 850 nm LED ir led IR LED infrared led 60825-1 IEC 62471 osram
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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npn phototransistor
Abstract: BPW17N BPW17 BPW17N application note 8239
Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW17N
2002/95/EC
2002/96/EC
BPW17N
18-Jul-08
npn phototransistor
BPW17
BPW17N application note
8239
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GPLY6724
Abstract: OHLA0687
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4252 Nicht für Neuentwicklungen / Not for new designs Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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Q65110A2467
Abstract: GPLY6880
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung • Kurze Schaltzeiten • High Power Infrared LED
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PP506-1
Abstract: pp-506-1 DN304 "Co Sensor" CN106 PP506 PP701 BN202 CN501 KR311
Text: •SU PER INTENSITY VISIBLE LED I INFRARED LED I PHOTO DETECTOR ■ Stanley super-intensity visible and infrared LEDs 660 nm to 925 nm are suitable as light sources for optical comm unications, bar-code readers and sensors. The package of the [ID -311, CD-511 and □□-1011 series used for light sourcing and reception can be easily combined with
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DD-S11
FH1011
DN511
FH511
BN511
NR312
NR403AF
NR513
PP506-1
pp-506-1
DN304
"Co Sensor"
CN106
PP506
PP701
BN202
CN501
KR311
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SFH421P
Abstract: TP20 SFH421-P
Text: SIEMENS FEATURES • Surface Mountable Package PL-CC-2 • Very High Efficiency GaAIAs IR IRED • Good Lineality [le = f IF ] • Radiation in Near Infrared Range, 880 nm • High Reliability • Long Term Stability • Fast Switching Time • High Pulse Handling Capability
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SFH421
SFH320
SFH420
SFH421
SFH421P
TP20
SFH421-P
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