INFINEON MOSFET PARAMETER TEST Search Results

Contextual Info: LH1485AT/AAB/AABTR Optically Coupled High Speed MOSFET Drivers FEATURES • • • • Package Dimensions in Inches mm Fast Turn On Fast Turn Off Low Input Current Isolation Test Voltage, 5300 VACRMS DIP 2 1 5 4 1 2 3 S 4 5 6 S' .256 (6.50) .248 (6.30)

2n2222 -331

Abstract: transistor 2N2222 SMD 6 PIN SMD IC FOR 15 W LED DRIVERS 2n2222 a 331 transistor 2N2222 SMD configuration 2n2222 smd SMD 6 PIN IC 2N2222 2n2222 331 photo diode array infineon MOSFET parameter test
Contextual Info: LH1485AT/AAB/AABTR Optically Coupled High Speed MOSFET Drivers FEATURES • • • • • Package Dimensions in Inches mm Fast Turn On Fast Turn Off Low Input Current Isolation Test Voltage, 5300 VACRMS Flammability; UL94,VØ DIP 2 1 5 4 1 2 3 S 4 5 6

6 PIN SMD IC FOR 15 W LED DRIVERS

Abstract: LH1485 6-pin smd zener 1485AT smd capa
Contextual Info: LH1485AT/A AB/A ABTR Optically Coupled High Speed MOSFET Drivers FEATURES Package Dimensions in Inches mm • Fast Turn On DIP • Fast Turn Off Pin One ID. • Low Input Current f3i [2i rii T • Isolation Test Voltage, 5300 VACRMS .256 (6.50) .248 (6.30)

Contextual Info: BSC0923NDI Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 5 2.8 mW VGS=4.5 V 7 3.7 40 40 VDS • Optimized for high performance Buck converter RDS on ,max • Logic level (4.5V rated) • 100% avalanche tested

Contextual Info: Datasheet,Version 2.1, April 21, 2011 ICE2QS03 Quasi-Resonant Controller PWM Power Management & Supply N e v e r s t o p t h i n k i n g . ICE2QS03 Revision History: April 21, 2011 Previous Version: 2.0 Page17 Datasheet test condition Iout changed from 20mA to 10mA

tda4864

Abstract: zero crossing detector mosfet MUR115 1N4937 ICE1PD165G IEC555 active harmonic filter infineon MOSFET parameter test
Contextual Info: Infineon Technologies preliminary ICE1PD165G Power Factor Controller + Cool- MOS: BoostSET IC for High Power Factor and low THD •=IC for sinusoidal line-current consumption •=Controller and CoolMOS within one package •=P-DSO-16-10 •=Power factor achieves nearly 1

zero crossing detector FOR 3 PHASE SUPPLY

Abstract: 1N4937 ICE1PD265G IEC555 MUR115 P-DSO-16-1 CoolMOS power ic active harmonic filter 500 coolmos
Contextual Info: Infineon Technologies preliminary ICE1PD265G Power Factor Controller + Cool- MOS: BoostSET IC for High Power Factor and low THD =IC for sinusoidal line-current consumption =Controller and CoolMOS within one package =P-DSO-16-10 =Power factor achieves nearly 1

4863g

Abstract: 4863g IC pin connection ic tda4863 4863G datasheet TDA 4863 infineon MOSFET parameter test E36/11 tda4863 equivalent rs-flip-flop block diagram TDA4863 application note
Contextual Info: Infineon Technologies preliminary Power Factor Controller TDA4863 Boost Controller IC for High Power Factor and low THD •=IC for sinusoidal line-current consumption •=Power factor achieves nearly 1 •=Controls boost converter as active harmonic filter for low THD

Contextual Info: BSC0923NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 30 30 V VGS=10 V 5 2.8 mW VGS=4.5 V 7 3.7 40 40 • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter VDS • Logic level 4.5V rated RDS(on),max • 100% avalanche tested

4863g

Abstract: TDA4863 4863g IC TDA 4863 220v ac to 9v dc converter 4863G datasheet zero crossing detector mosfet 220V ac to 12V dc 8 amps power supply circuit Q67040-S4451 zero crossing detector ic with 90v
Contextual Info: preliminary Power Factor Controller TDA4863 Boost Controller IC for High Power Factor and low THD • IC for sinusoidal line-current consumption · Power factor achieves nearly 1 · Controls boost converter as active harmonic filter for low THD · Start up with low current consumption

bjt transistor pnp

Abstract: MOSFET C65 l3 sot323-3 dvbt tuner FREF10 crystal generator 1GHz DVB-T nim infineon tuner IC SMD code l32 SMD FM IC tuner
Contextual Info: Wireless Components Application Note of DVB-T COFDM Tuner with Broadband Multimedia IC, TUA6034 Version 2 (Revised including DVB-T Field Test and Half NIM with TDA6192T) Applications of IC, TUA6034 : Specially Suitable for Digital Broadcasting Standards like DVB-T, DVB-C, ISDB-T, ATSC, etc.

65C6070

Abstract: infineon MOSFET parameter test diode marking SJ 65C6 ipw65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

4863g

Abstract: 4863g IC TDA4863G zero crossing detector mosfet tda4863-2 TDA4863 TDA48632
Contextual Info: preliminary Power Factor Controller TDA4863 Boost Controller IC for High Power Factor and low THD =IC for sinusoidal line-current consumption =Power factor achieves nearly 1 =Controls boost converter as active harmonic filter for low THD  Start up with low current consumption

Contextual Info: High -P erf or manc e Dr BL AD E 5 mm x 5 mm x 0.6 mm IQFN TD A21 310 Dat a She et Revision 2.1, 2013-09-05 Po wer Ma nage m ent and M ulti M ark e t Edition 2013-09-05 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG

cdma Booster schematic

Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
Contextual Info: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….

Contextual Info: 1EDI EiceDRIVER Compact Separate output variant for MOSFET Single Channel MOSFET Gate Driver IC 1EDI60N12AF Preliminary Data Sheet Rev. 1.00, 2013-11-20 Industrial Power Control Edition 2013-11-20 Published by Infineon Technologies AG 81726 Munich, Germany

PX3516ADDG-R4

Abstract: PX75XX VR12 intel VR12 PX3516ADDG Primarion Digital Power Management UG170
Contextual Info: Synchronous Rectified Buck MOSFET Driver IC PX3516 Synchronous Rectified Buck MOSFET Driver IC PX3516 March 16th - 2010 Published by Infineon Technologies AG http://www.infineon.com/DCDC Power Management 1of 12 PX3516 PX3516 Synchronous Rectified Buck MOSFET Driver IC

Contextual Info: BSC0925ND OptiMOSTM Power-MOSFET Product Summary Features • Dual N-channel OptiMOS MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS on ,max 5 mW ID 40 A QOSS 8.6 nC QG(0V.10V) 13 nC • Optimized for high performance Buck converter

DD15

Contextual Info: BSC0925ND OptiMOSTM Power-MOSFET Product Summary Features • Dual N-channel OptiMOS MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS on ,max 5 mW ID 40 A QOSS 8.6 nC QG(0V.10V) 13 nC • Optimized for high performance Buck converter

Contextual Info: BSC0925ND OptiMOSTM Power-MOSFET Product Summary Features • Dual N-channel OptiMOS MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS on ,max 5 mW ID 40 A QOSS 8.6 nC QG(0V.10V) 13 nC • Optimized for high performance Buck converter

transistor d30

Abstract: BSC0925ND DD15 0925ND
Contextual Info: BSC0925ND TM OptiMOS Power-MOSFET Product Summary Features • Dual N-channel OptiMOS MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS on ,max 4.5 mΩ ID 40 A QOSS 8.6 nC QG(0V.10V) 13 nC

6r3k3c6

Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

6r070c6

Abstract: 6R070C6 MOSFET TRANSISTOR
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description

6r070c6

Abstract: IPW60R070C6 IF-258 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description