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    INFINEON MARKING CODE L2 Search Results

    INFINEON MARKING CODE L2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    74LVCH16501APF8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APV Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation

    INFINEON MARKING CODE L2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ADM6993

    Abstract: ADM6992 Tx/Fx Media Converter fibre to ethernet converter TS-1000 TS1000 Tx/Fx ethernet switch 100M 4 port
    Text: Product Brief ADM6993 Fiber-to-Fast Ethernet Converters The ADM6993 consists of Fiber to Fast Ethernet converters on a single chip, integrating two 10/100 Mbps MDIX TX/FX transceivers with a two-port 10/100M Ethernet L2 switch controller. Features include an OAM engine for


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    ADM6993 ADM6993 10/100M TS1000 10Base-T/100Base-TX 100Baion B000-H0000-X-X-7600 ADM6992 Tx/Fx Media Converter fibre to ethernet converter TS-1000 Tx/Fx ethernet switch 100M 4 port PDF

    infineon marking L2s

    Abstract: BCR402U 402U BCW66H SC74
    Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications


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    BCR402U infineon marking L2s BCR402U 402U BCW66H SC74 PDF

    CSC74

    Abstract: No abstract text available
    Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications


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    BCR402U CSC74 PDF

    infineon marking L2s

    Abstract: CSC74
    Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications


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    BCR402U infineon marking L2s CSC74 PDF

    BCR402UE6182

    Abstract: infineon marking L2s infineon marking code L2s
    Text: BCR402UE6182 LED Driver Preliminary data • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications,


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    BCR402UE6182 BCR402UE6182 infineon marking L2s infineon marking code L2s PDF

    infineon marking L2s

    Abstract: infineon marking code L2s CSC74
    Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications


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    BCR402U infineon marking L2s infineon marking code L2s CSC74 PDF

    marking FC

    Abstract: No abstract text available
    Text: BFR380L3 NPN Silicon RF Transistor Preliminary data  High current capability and low figure for 3 wide dynamic range application  Low voltage operation  Ideal for low phase noise oscillators up to 3.5 GHz 1 2  Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    BFR380L3 marking FC PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain amplifiers up to 2 GHz 3  For linear broadband amplifiers  fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


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    BFR193L3 PDF

    marking FA

    Abstract: No abstract text available
    Text: BFR340L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  Transition frequency of 14 GHz  High insertion gain 1  Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    BFR340L3 marking FA PDF

    SMD MARKING CODE f2

    Abstract: No abstract text available
    Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BGA231N7 SMD MARKING CODE f2 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BGA231N7 PDF

    marking FA

    Abstract: BFR340T
    Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


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    BFR340T marking FA BFR340T PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


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    BFR181T PDF

    TRANSISTOR MARKING NK

    Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


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    BFR949T TRANSISTOR MARKING NK BCR108T BFR949T SC75 SC79 SCD80 BFR94 PDF

    infineon Marking L1

    Abstract: No abstract text available
    Text: BFR380T NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 2 3 1 • Low voltage operation • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description


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    BFR380T infineon Marking L1 PDF

    ua 722 fc

    Abstract: BCR847BF MARKING rks BFR94
    Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA  fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


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    BFR949F ua 722 fc BCR847BF MARKING rks BFR94 PDF

    marking FB

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


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    BFR360T marking FB PDF

    BCR402U

    Abstract: infineon marking L2s bcr402 402U AN077 AN101 BC817SU BCX68-25 SC74 adjustable current source LED
    Text: BCR402U LED Driver Features • LED drive current of 20mA • Output current adjustable up to 65mA with external resistor 4 3 5 • Supply voltage up to 40V 2 6 • Easy paralleling of drivers to increase current 1 • Low voltage overhead of 1.4V • High current accuracy at supply voltage variation


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    BCR402U 750mW SC-74 BCR402U infineon marking L2s bcr402 402U AN077 AN101 BC817SU BCX68-25 SC74 adjustable current source LED PDF

    Germanium power

    Abstract: No abstract text available
    Text: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München


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    BGA615L7 D-81541 BGA615L7 BGA619 Germanium power PDF

    infineon marking L2

    Abstract: BFR193L3
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


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    BFR193L3 infineon marking L2 BFR193L3 PDF

    BFR193L3

    Abstract: BFR380L3 marking FC
    Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description


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    BFR380L3 BFR193L3 BFR380L3 marking FC PDF

    BFR949T

    Abstract: MA457 MARKING C6 BFR94
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking


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    BFR949T BFR949T MA457 MARKING C6 BFR94 PDF

    BFR360T

    Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    BFR360T VPS05996 BFR360T BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325 PDF