ADM6993
Abstract: ADM6992 Tx/Fx Media Converter fibre to ethernet converter TS-1000 TS1000 Tx/Fx ethernet switch 100M 4 port
Text: Product Brief ADM6993 Fiber-to-Fast Ethernet Converters The ADM6993 consists of Fiber to Fast Ethernet converters on a single chip, integrating two 10/100 Mbps MDIX TX/FX transceivers with a two-port 10/100M Ethernet L2 switch controller. Features include an OAM engine for
|
Original
|
ADM6993
ADM6993
10/100M
TS1000
10Base-T/100Base-TX
100Baion
B000-H0000-X-X-7600
ADM6992
Tx/Fx Media Converter
fibre to ethernet converter
TS-1000
Tx/Fx
ethernet switch 100M 4 port
|
PDF
|
infineon marking L2s
Abstract: BCR402U 402U BCW66H SC74
Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications
|
Original
|
BCR402U
infineon marking L2s
BCR402U
402U
BCW66H
SC74
|
PDF
|
CSC74
Abstract: No abstract text available
Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications
|
Original
|
BCR402U
CSC74
|
PDF
|
infineon marking L2s
Abstract: CSC74
Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications
|
Original
|
BCR402U
infineon marking L2s
CSC74
|
PDF
|
BCR402UE6182
Abstract: infineon marking L2s infineon marking code L2s
Text: BCR402UE6182 LED Driver Preliminary data • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications,
|
Original
|
BCR402UE6182
BCR402UE6182
infineon marking L2s
infineon marking code L2s
|
PDF
|
infineon marking L2s
Abstract: infineon marking code L2s CSC74
Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications
|
Original
|
BCR402U
infineon marking L2s
infineon marking code L2s
CSC74
|
PDF
|
marking FC
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BFR380L3
marking FC
|
PDF
|
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFR193L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
|
Original
|
BFR193L3
|
PDF
|
marking FA
Abstract: No abstract text available
Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BFR340L3
marking FA
|
PDF
|
SMD MARKING CODE f2
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
|
Original
|
BGA231N7
SMD MARKING CODE f2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
|
Original
|
BGA231N7
|
PDF
|
marking FA
Abstract: BFR340T
Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BFR340T
marking FA
BFR340T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BFR181T
|
PDF
|
|
TRANSISTOR MARKING NK
Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!
|
Original
|
BFR949T
TRANSISTOR MARKING NK
BCR108T
BFR949T
SC75
SC79
SCD80
BFR94
|
PDF
|
infineon Marking L1
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 2 3 1 • Low voltage operation • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description
|
Original
|
BFR380T
infineon Marking L1
|
PDF
|
ua 722 fc
Abstract: BCR847BF MARKING rks BFR94
Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
|
Original
|
BFR949F
ua 722 fc
BCR847BF
MARKING rks
BFR94
|
PDF
|
marking FB
Abstract: No abstract text available
Text: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BFR360T
marking FB
|
PDF
|
BCR402U
Abstract: infineon marking L2s bcr402 402U AN077 AN101 BC817SU BCX68-25 SC74 adjustable current source LED
Text: BCR402U LED Driver Features • LED drive current of 20mA • Output current adjustable up to 65mA with external resistor 4 3 5 • Supply voltage up to 40V 2 6 • Easy paralleling of drivers to increase current 1 • Low voltage overhead of 1.4V • High current accuracy at supply voltage variation
|
Original
|
BCR402U
750mW
SC-74
BCR402U
infineon marking L2s
bcr402
402U
AN077
AN101
BC817SU
BCX68-25
SC74
adjustable current source LED
|
PDF
|
Germanium power
Abstract: No abstract text available
Text: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
|
Original
|
BGA615L7
D-81541
BGA615L7
BGA619
Germanium power
|
PDF
|
infineon marking L2
Abstract: BFR193L3
Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BFR193L3
infineon marking L2
BFR193L3
|
PDF
|
BFR193L3
Abstract: BFR380L3 marking FC
Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description
|
Original
|
BFR380L3
BFR193L3
BFR380L3
marking FC
|
PDF
|
BFR949T
Abstract: MA457 MARKING C6 BFR94
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking
|
Original
|
BFR949T
BFR949T
MA457
MARKING C6
BFR94
|
PDF
|
BFR360T
Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BFR360T
VPS05996
BFR360T
BCR108T
E6327
SC75
TRANSISTOR MARKING NK
infineon marking code L2
fbs MARKING TRANSISTOR
transistor marking code 325
|
PDF
|