INFINEON DEVICES MARKING FORMAT Search Results

electrolytic capacitor 2200 uf

Contextual Info: PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt LDMOS integrated circuits intended for base station applications. They can be used for all typical modulation formats

Contextual Info: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package

infineon AN077

Abstract: AN077 BFR193L3 BFR380L3
Contextual Info: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package

Contextual Info: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package

infineon x-gold

Abstract: PG-TSSLP-2-17 ESD0P2RF-02LRH X-GOLD 116 xgold
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD0P2RF Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD0P2RF-02LS ESD0P2RF-02LRH Data Sheet Revision 1.0, 2011-05-19 Final Industrial and Multi-Market Edition 2011-05-19 Published by

Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD3V3XU1U Series Uni-directional Ultra Low Capacitance ESD / Transient Protection Diode ESD3V3XU1US ESD3V3XU1UL Data Sheet Revision 1.0, 2011-04-20 Preliminary Industrial and Multi-Market Edition 2011-04-20 Published by

Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD24VL1B Series Low Capacitance Bi-directional ESD / Transient Protection Diode ESD24VL1B-02LS ESD24VL1B-02LRH Data Sheet Revision 1.1, 2012-05-04 Final Power Management & Multimarket Edition 2012-05-04 Published by

microwave satellite antenna

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD0P2RF Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD0P2RF-02LS ESD0P2RF-02LRH Data Sheet Revision 1.0, 2011-08-01 Final Industrial and Multi-Market Edition 2011-08-01 Published by

ESD3V3S1B-02LRH

Abstract: X-GOLD 613 keyboard and touchpad schematic ESD3V3S1B-02LS Infineon X-GOLD 613 halogen free speaker cable infineon x-gold Infineon X-GOLD 1010
Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD3V3S1B Series Ultra Low Clamping Bi-directional ESD / Transient Protection Diode ESD3V3S1B-02LRH ESD3V3S1B-02LS Data Sheet Revision 1.1, 2011-11-28 Final Industrial and Multi-Market Edition 2011-11-28 Published by

Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD3V3S1B Series Ultra Low Clamping Bi-directional ESD / Transient Protection Diode ESD3V3S1B-02LRH ESD3V3S1B-02LS Data Sheet Revision 1.1, 2011-11-28 Final Industrial and Multi-Market Edition 2011-11-28 Published by

Infineon X-GOLD 110

Abstract: X-GOLD 110 nfc antenna ESD24VL1B02L murata nfc antenna ESD24VL1B-02LRH xgold ESD24VL1B-02LS
Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD24VL1B Series Low Capacitance Bi-directional ESD / Transient Protection Diode ESD24VL1B-02LS ESD24VL1B-02LRH Data Sheet Revision 1.1, 2012-05-04 Final Power Management & Multimarket Edition 2012-05-04 Published by

Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD5V3S1B-02LS Bi-directional Symmetrical Medium Capacitance ESD / Transient Protection Diode ESD5V3S1B-02LS Data Sheet Revision 1.0, 2011-04-08 Final Industrial and Multi-Market Edition 2011-04-08 Published by

Infineon X-GOLD 110

Abstract: X-GOLD 110 ESD5V3L1B-02LS PG-TSLP-2-17 all resistance ratings ebook x-gold Infineon X-GOLD 102 marking code ebook X-GOLD 102
Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD5V3L1B Series Bi-directional Low Capacitance ESD / Transient Protection Diode ESD5V3L1B-02LRH ESD5V3L1B-02LS Data Sheet Revision 1, 2011-08-04 Final Industrial and Multi-Market Edition 2011-08-04 Published by

label infineon lot number

Abstract: zestron washing machine verilog code Infineon code date marking format INFINEON LOT NUMBER code label washing machine panasonic schematic INFINEON trace code label samsung bluetooth KP12x matlab washing machine
Contextual Info: KP12x Barometric Air Pressure Sensors Freq uent ly Asked Quest i ons App lication No te Rev. 1.1, 2009-06-01 Sense & Control Edition 2009-06-01 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.

Infineon code date marking format

Abstract: BFP460 infineon AN077 AN077 BGA420 Infineon DEVICES marking format
Contextual Info: BFP460 NPN Silicon RF Transistor • General purpose low noise amplifier 3 for low voltage, low current applications 2 4 • High ESD robustness, typical 1500V HBM 1 • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point

Infineon code date marking format

Abstract: lna 2.5 GHZ s parameter ads design
Contextual Info: BFP520 NPN Silicon RF Transistor • High gain and low noise at high frequencies 3 due to high transit frequency f T = 45 GHz 2 4 • Designed for low voltage applications, 1 ideal for 1.2 V or 1.8 V V CC • Ideal as IF amplifier from 950 - 2150 MHz or LNA in C-Band LNB 3.4 - 4.2 GHz

Contextual Info: BFP460 NPN Silicon RF Transistor • General purpose low noise amplifier 3 for low voltage, low current applications 2 4 • High ESD robustness, typical 1500V HBM 1 • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point

BFR340F

Abstract: AN077 BFR340F TSFP-3
Contextual Info: BFR340F NPN Silicon RF Transistor • General purpose Low Noise Amplifier • Ideal for low current operation 2 3 1 • High breakdown voltage enables operation in automotive applications • Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz • Small package 1,2 x 1,2 mm 2 with visible leads

IP3AE

Contextual Info: BFP460 NPN Silicon RF Transistor • General purpose low noise amplifier 3 for low voltage, low current applications 2 4 • High ESD robustness, typical 1500V HBM 1 • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point

Class D RF amplifer

Abstract: PTMA080302M
Contextual Info: Preliminary PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 30 W, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation

Contextual Info: n-Channel Power MOSFET OptiMOS BSB280N15NZ3 G Data Sheet 2.5, 2011-09-16 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB012NE2LX 1 Description OptiMOS™150V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

max2155

Abstract: BSB280N15NZ3G
Contextual Info: n-Channel Power MOSFET OptiMOS BSB280N15NZ3 G Data Sheet 2.5, 2011-09-16 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB280N15NZ3 G 1 Description OptiMOS™150V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

Contextual Info: n-Channel Power MOSFET OptiMOS BSB280N15NZ3 G Data Sheet 2.5, 2011-09-16 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB280N15NZ3 G 1 Description OptiMOS™150V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

Motorola transistor smd marking codes

Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Contextual Info: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,