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Abstract: No abstract text available
Text: SMT PLANAR POWER INDUCTOR SERIES ! W E N Height: .290" Max Footprint: .78" x .75" Current Range: 9 A to 73 A Inductance Range: .45 µH to 6.2 µH Maximum Energy Storage: 2.4 mJ Low Power Loss Ratings: .16 to 2.25 W Frequency Range: 100 kHz to 2 MHz Electrical Specifications @ 25°C — Operating Temperature -40°C to +100°C
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Untitled
Abstract: No abstract text available
Text: SMT PLANAR POWER INDUCTOR SERIES ! W E N Height: .290" Max Footprint: .78" x .75" Current Range: 9 A to 73 A Inductance Range: .45 µH to 6.2 µH Maximum Energy Storage: 2.4 mJ Low Power Loss Ratings: .16 to 2.25 W Frequency Range: 100 kHz to 2 MHz Electrical Specifications @ 25°C — Operating Temperature -40°C to +100°C
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Untitled
Abstract: No abstract text available
Text: SMT PLANAR POWER INDUCTOR SERIES ! W E N Height: .290" Max Footprint: .78" x .75" Current Range: 9 A to 73 A Inductance Range: .45 µH to 6.2 µH Maximum Energy Storage: 2.4 mJ Low Power Loss Ratings: .16 to 2.25 W Frequency Range: 100 kHz to 2 MHz Electrical Specifications @ 25°C — Operating Temperature -40°C to +100°C
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Untitled
Abstract: No abstract text available
Text: HMC376LP3 / 376LP3E v01.0610 AMPLIFIERS - LOW NOISE - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters
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HMC376LP3
376LP3E
HMC376LP3E
HMC376LP3
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HMC617
Abstract: HMC376LP3 HMC376LP3E HMC617LP3 H376 112580
Text: HMC376LP3 / 376LP3E v01.0610 AMPLIFIERS - LOW NOISE - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters
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HMC376LP3
376LP3E
HMC376LP3E
HMC376LP3
HMC617
HMC617LP3
H376
112580
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HMC376LP3
Abstract: HMC376LP3E HMC382LP3
Text: HMC376LP3 / 376LP3E v00.1005 AMPLIFIERS - SMT 5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters
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HMC376LP3
376LP3E
HMC376LP3E
HMC376LP3
HMC382LP3
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Untitled
Abstract: No abstract text available
Text: HMC376LP3 / 376LP3E v00.1005 AMPLIFIERS - SMT 8 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters
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HMC376LP3
376LP3E
HMC376LP3E
HMC376LP3
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3g amplifier
Abstract: mobile rf power amplifier transistor HMC376LP3 HMC376LP3E HMC382LP3
Text: HMC376LP3 / 376LP3E v00.1005 LOW NOISE AMPLIFIERS - SMT 4 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters
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HMC376LP3
376LP3E
HMC376LP3E
HMC376LP3
3g amplifier
mobile rf power amplifier transistor
HMC382LP3
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Untitled
Abstract: No abstract text available
Text: Anam PA.25a Specification Part No. PA.25a Product Name Anam Hexa-Band Cellular SMD Antenna GSM / CDMA / DCS / PCS / WCDMA /UMTS /HSDPA / GPRS / EDGE 800 MHz to 2200 MHz Feature High Efficiency Multi-Band SMD Antenna 35*5*6mm RoHS Compliant SPE-11-8-061/G |
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SPE-11-8-061/G
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Untitled
Abstract: No abstract text available
Text: Anam PA.25a Speciication Part No. PA.25a Product Name Anam Hexa-Band Cellular SMD Antenna GSM / CDMA / DCS / PCS / WCDMA /UMTS /HSDPA / GPRS / EDGE 800 MHz to 2200 MHz Feature High Eficiency Multi-Band SMD Antenna 35*5*6mm RoHS Compliant SPE-11-8-061/G | page 1 of 21
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SPE-11-8-061/G
PA-25
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capacitor 10kpf
Abstract: Ft50-43 balun transformer 50ohm BN43-202 bn43202 10KPF 103M capacitor TOROIDAL transformer specification SR703 BN-43-202
Text: 17 TB-113 RF TEST DATA RECORD TEST SPECIFICATION - SR703 AMP REVISED VDS - 28 V UNIT # Fq MHz 1 2 3 4 5 6 7 8 9 10 11 100 110 120 130 140 150 160 170 180 190 200 IDQ - 4.0 A Pin (WATTS) INPUT RT LOSS (DB) Pout (WATTS) OPERATOR - KM ID (AMPS) -17 -19 -21
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TB-113
SR703
082uF
10KpF
10MFD
capacitor 10kpf
Ft50-43
balun transformer 50ohm
BN43-202
bn43202
10KPF
103M capacitor
TOROIDAL transformer specification
BN-43-202
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D400 transistor
Abstract: MS21 D400 transistor pin layout microwave antenna 1500 MHz Schaffer transistor d400 AN025 BAR63 BAR63-03W BAR65
Text: A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 2 5 1400 - 1600 MHz PIN-Diode Transmit-Receive Switch R F & P r o t e c ti o n D e v i c e s Edition 2006-10-20 Published by Infineon Technologies AG 81726 München, Germany
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16-OCT-96
\schaffer\proj96\pdc
D400 transistor
MS21
D400 transistor pin layout
microwave antenna 1500 MHz
Schaffer
transistor d400
AN025
BAR63
BAR63-03W
BAR65
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Untitled
Abstract: No abstract text available
Text: AWB512 AWB512 Data Sheet 5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB512, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and
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AWB512
AWB512
AWB512,
500MHz
AWB312
AWB317
AWB319
AWB517
AWB519
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2270MHz
Abstract: antenna CDMA GPRS gsm short whip 1160MHz 1610MHz PA25A
Text: Specification Model No. : PA.25 Anam Part No. : PA.25a Product Name : Features Hexa-Band Cellular SMD Antenna GSM / CDMA / DCS / PCS / WCDMA / UMTS /HSDPA / GPRS / EDGE 800 MHz to 2200 MHz : High Efficiency Multi-Band SMD Antenna 35*6*5mm RoHS Measurements on above 110*40mm ground plane EVB
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1700MHz)
286-3polyester
2270MHz
antenna CDMA GPRS
gsm short whip
1160MHz
1610MHz
PA25A
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Untitled
Abstract: No abstract text available
Text: IHLP-6767GZ-01 Vishay Dale Low Profile, High Current IHLP Inductor FEATURES • Shielded construction • Frequency range up to 2.0 MHz • Lowest DCR/µH, in this package size • Handles high transient current spikes without saturation • Saturation and
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IHLP-6767GZ-01
2002/95/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA
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AT-41532
OT-323
SC-70)
SC-70
OT-323)
AT-41532
5965-6167E
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IHLP-6767GZ-01
Abstract: No abstract text available
Text: IHLP-6767GZ-01 Vishay Dale Low Profile, High Current IHLP Inductor FEATURES • Shielded construction • Frequency range up to 2.0 MHz • Lowest DCR/µH, in this package size • Handles high transient current spikes without saturation • Saturation and
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IHLP-6767GZ-01
18-Jul-08
IHLP-6767GZ-01
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A01 MMIC
Abstract: siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm
Text: Application Note No. 054 Discrete & RF Semiconductors 869 - 894 MHz Receiver Front End Downconverting to 116 MHz Receiver Front End for 869 MHz to 894 MHz downconverting to 116 MHz including a Low Noise Amplifier with Gainstep and a Mixer with LO Buffer. The LNA stage, a BFP420, can be switched to high and low gain mode by changing the level
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BFP420,
CMY91
BFP183W
10dBm
A01 MMIC
siemens inductor
SIEMENS CAPACITOR C5
mmic a01
"Downconverting to 116 MHz"
Siemens capacitor 0402
CAPACITOR SIEMENS
BFP420
SIEMENS filter
resistor 470ohm
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PA25A
Abstract: antenna CDMA GPRS gsm short whip 1820MHz gsm module 1145MHz helix antenna PA-25
Text: Specification Model No. : PA.25 Anam Part No. : PA.25a Product Name : Features Hexa-Band Cellular SMD Antenna GSM / CDMA / DCS / PCS / WCDMA / UMTS /HSDPA / GPRS / EDGE 800 MHz to 2200 MHz : High Efficiency Multi-Band SMD Antenna 35*6*5mm RoHS Photo Version
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1700MHz)
Ennis40
286-3polyester
PA25A
antenna CDMA GPRS
gsm short whip
1820MHz
gsm module
1145MHz
helix antenna
PA-25
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DECT transmitter siemens
Abstract: pindiode switch L234N A03 SMD microwave transistor siemens BAR63 BAR63-03W BAR80 SIMID02 ms32 equivalent
Text: Application Note No. 007 Discrete & RF Semiconductors DECT 1.9 GHz Transmit - Receive PIN-Diode Switch DECT cordless telephones operate at frequencies between 1880 MHz and 1900 MHz. The TDMA system employed requires a non mechanical transmit-receive switch to connect the
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24dBm
3-10mA
DECT transmitter siemens
pindiode switch
L234N
A03 SMD
microwave transistor siemens
BAR63
BAR63-03W
BAR80
SIMID02
ms32 equivalent
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sod343
Abstract: diode V6 96 Lambda Semiconductors D400 transistor BAR63 BAR63-03W BAR80 BCR400 BCR400W D400
Text: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state
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1600MHz:
sod343
diode V6 96
Lambda Semiconductors
D400 transistor
BAR63
BAR63-03W
BAR80
BCR400
BCR400W
D400
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IC pt 2399 CIRCUIT DIAGRAM
Abstract: No abstract text available
Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB G A
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AT-41532
OT-323
SC-70)
SC-70
OT-323)
AT-41532
5965-6167E
IC pt 2399 CIRCUIT DIAGRAM
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Untitled
Abstract: No abstract text available
Text: TYPE Surface Mount Inductors D63LCB 73 TYPE D63LCB Frequency Range: 10kHz -1 MHz Inductance Range: 1 -1 50pH Recommended patterns: Features • • • • • Low profile 3.0mm max. Ideal for a variety of DC-DC converter inductor applications Magnetically shielded
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D63LCB
10kHz
TR6871
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PJ 0349
Abstract: PJ 2399 0709s
Text: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA
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AT-41532
SC-70
OT-323)
OT-323
SC-70)
1-800-Z35-031Z
5965-6167E
PJ 0349
PJ 2399
0709s
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