indalloy 100
Abstract: SN63 RFP-200-100RK
Text: 200 Watts, 100 Ω Flangeless Resistors Model RFP-200-100RK Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications
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RFP-200-100RK
MIL-E-5400.
indalloy 100
SN63
RFP-200-100RK
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RFP-40-100RPP
Abstract: SN63
Text: 40 Watts, 100 Ω Flangeless Resistors Model RFP-40-100RPP Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications
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RFP-40-100RPP
MIL-E-5400.
RFP-40-100RPP
SN63
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Sn63
Abstract: RFP-30-100R
Text: 30 Watts, 100 Ω Flangeless Resistors Model RFP-30-100R Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications
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RFP-30-100R
MIL-E-5400.
Sn63
RFP-30-100R
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Sn63
Abstract: RFP-300-100RN 300100r
Text: 300 Watts, 100 Ω Flangeless Resistors Model RFP-300-100RN Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications
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RFP-300-100RN
MIL-E-5400.
Sn63
RFP-300-100RN
300100r
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RFP-125-100RF
Abstract: Sn63
Text: 125 Watts, 100 Ω Flangeless Resistors Model RFP-125-100RF Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications
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RFP-125-100RF
MIL-E-5400.
RFP-125-100RF
Sn63
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RFP-150-100RCGN
Abstract: Sn63
Text: 150 Watts, 100 Ω Flangeless Resistors Model RFP-150-100RCGN Flangeless Resistors General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications
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RFP-150-100RCGN
MIL-E-5400.
RFP-150-100RCGN
Sn63
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44In42Sn14Cd
Abstract: ASM800 heat exchanger heat sink heat sink for power diode CW laser diode 808 nm CW Laser laser diode array indalloy 8
Text: 20W CW Laser Diode Array Submodule 806rm SILVER BULLET • Packaged Laser Diode Bar • Easily Soldered To A Heat Exchanger \ PARAMETER CW Pow er O utput Operatinq Current Threshold C urrent Slope Efficiency Efficiency N um ber of Em itters121 Em itter S ize121
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a06rm
Emitters121
Size121
Pitch12'
Tolerance01
44In42Sn14Cd
ASM800
heat exchanger
heat sink
heat sink for power diode
CW laser diode 808 nm
CW Laser
laser diode array
indalloy 8
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RFP-40-2APPZ
Abstract: RFP-40-1APPZ RFP-40-3APPZ RFP-40-4APPZ RFP-40-5APPZ RFP-40-6APPZ RFP-40-9APPZ SN63
Text: 40 Watts General Specifications Resistive Element: Substrate: Cover: Lead s : Flangeless Attenuators Model RFP-40-XXAPPZ Flangeless Attenuators Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications Features
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RFP-40-XXAPPZ
MIL-E-5400.
RFP-40-2APPZ
RFP-40-1APPZ
RFP-40-3APPZ
RFP-40-4APPZ
RFP-40-5APPZ
RFP-40-6APPZ
RFP-40-9APPZ
SN63
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RFP-50-1AF
Abstract: RFP-50-2AF RFP-50-3AF RFP-50-4AF RFP-50-5AF RFP-50-6AF RFP-50-9AF 503AF
Text: 50 Watts General Specifications Resistive Element: Substrate: Cover: Lead s : Flangeless Attenuators Model RFP-50-XXAF Flangeless Attenuators Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications Features
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RFP-50-XXAF
MIL-E-5400.
RFP-50-1AF
RFP-50-2AF
RFP-50-3AF
RFP-50-4AF
RFP-50-5AF
RFP-50-6AF
RFP-50-9AF
503AF
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RFP-40-5APP
Abstract: RFP-40-6APP RFP-40-9APP RFP-40-1APP RFP-40-2APP RFP-40-3APP RFP-40-4APP
Text: 40 Watts General Specifications Resistive Element: Substrate: Cover: Lead s : Flangeless Attenuators Model RFP-40-XXAPP Flangeless Attenuators Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications Features
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RFP-40-XXAPP
MIL-E-5400.
RFP-40-5APP
RFP-40-6APP
RFP-40-9APP
RFP-40-1APP
RFP-40-2APP
RFP-40-3APP
RFP-40-4APP
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RFP 75-50
Abstract: 10030a RFP-100-1AF RFP-100-2AF RFP-100-3AF RFP-100-4AF RFP-100-5AF RFP-100-6AF RFP-100-9AF 1002AF
Text: 100 Watts General Specifications Resistive Element: Substrate: Cover: Lead s : Flangeless Attenuators Model RFP-100-XXAF Flangeless Attenuators Thick film Beryllium oxide ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications Features
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RFP-100-XXAF
MIL-E-5400.
RFP 75-50
10030a
RFP-100-1AF
RFP-100-2AF
RFP-100-3AF
RFP-100-4AF
RFP-100-5AF
RFP-100-6AF
RFP-100-9AF
1002AF
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varactor diode parameter
Abstract: ODS-1203 MA46H120
Text: GaAs Constant Gamma Flip-Chip Varactor Diode MA46H120 MA46H120 GaAs Constant Gamma FlipChip Varactor Diode Features • • • • • • Chip Layout Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection
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MA46H120
MA46H120
varactor diode parameter
ODS-1203
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varactor flip chip
Abstract: ma46h120 gold embrittlement ODS-1203
Text: Silicon Bipolar XXXXXXX Headline Part Number MA46H120 GaAs Constant Gamma FlipChip Varactor Diode Features • • • • • • Chip Layout TOP VIEW Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection
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MA46H120
MA46H120
varactor flip chip
gold embrittlement
ODS-1203
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LGA voiding
Abstract: NC-SMQ230 Indalloy 181 Solder Paste, Indium, Type 3 AN2920 7313 28 pin freescale ltcc BGA cte hcte ipc 610D
Text: Freescale Semiconductor Application Note Document Number: AN2920 Rev. 2, 12/2008 Manufacturing with the Land Grid Array Package by Networking & Multimedia Group Freescale Semiconductor, Inc. Austin, TX Freescale has introduced the High Coefficient of Thermal
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AN2920
LGA voiding
NC-SMQ230
Indalloy 181
Solder Paste, Indium, Type 3
AN2920
7313 28 pin
freescale ltcc
BGA cte
hcte
ipc 610D
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ASM06C020
Abstract: ASM808-20 australia heat sink ASM12C040 ASM14C060 ASM808-40 808N laser diode 980nm ASM01C020
Text: Industrial Microphotonics Company 808nm CW Laser Diode Array Submodules SILVER BULLET TM • Packaged 1, 2, 3 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm PRODUCT CHARACTERISTICS The Silver BulletTM is a fundamental building block for constructing high-power diode
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808nm
785-1064nm
laser2000
B-09/01
ASM06C020
ASM808-20
australia heat sink
ASM12C040
ASM14C060
ASM808-40
808N
laser diode 980nm
ASM01C020
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LGA rework
Abstract: AN2920 cte table flip chip substrate Solder Paste, Indium reflow process control LGA voiding AN1902 AN3241 BGA cte reflow profile FOR LGA COMPONENTS ceramic rework
Text: Freescale Semiconductor Application Note Document Number: AN3241 Rev. 1.0, 10/2009 Land Grid Array LGA Package Rework 1 Introduction This application note describes rework considerations for the Land Grid Array (LGA) style package. Freescale has introduced radio frequency (RF) modules
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AN3241
MC1320x
MC1321x
LGA rework
AN2920
cte table flip chip substrate
Solder Paste, Indium reflow process control
LGA voiding
AN1902
AN3241
BGA cte
reflow profile FOR LGA COMPONENTS
ceramic rework
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ASM06C020
Abstract: ASM12C040 ASM14C060 ASM808-20 ASM808-40 ASM06C040 Thorlabs heat sink thorlabs laser 808
Text: Industrial Microphotonics Company 808nm CW Laser Diode Array Submodules SILVER BULLET TM • Packaged 1, 2, 3 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm PRODUCT CHARACTERISTICS The Silver BulletTM is a fundamental building block for constructing high-power diode
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808nm
785-1064nm
laser2000
C-10/01
ASM06C020
ASM12C040
ASM14C060
ASM808-20
ASM808-40
ASM06C040
Thorlabs
heat sink
thorlabs laser 808
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MA4AGFCP910
Abstract: MA4AGCP910 MADP-000910-13050T
Text: AlGaAs Flip-Chip PIN Diode MA4AGFCP910 Rev 2.0 100MHz to 50GHz Features • • • • • • • Top View Shown Is With Diode Junction Up Lower Series Resistance, 5.2Ω Ultra Low Capacitance, 18 f F High Switching Cutoff Frequency, 50 GHz 3 Nanosecond Switching Speed
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MA4AGFCP910
100MHz
50GHz
MA4AGFCP910
Au/20
MA4AGCP910
MADP-000910-13050T
MA4AGCP910
MADP-000910-13050T
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ODS-186
Abstract: silver epoxy MA4FCP200 HP4291A ODS-1264
Text: MA4FCP200 Silicon Flip Chip PIN Diode Features • • • • • • • • Case Style ODS-12641, 2, 3 Low Series Resistance Low Capacitance High Cut-off Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion
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MA4FCP200
ODS-12641,
MA4FCP200
100mA
HP4291A
ODS-186
silver epoxy
ODS-1264
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ASM940-40
Abstract: australia heat sink ASM01C020 ASM02C040 ASM05C055 ASM940-20 CW laser diode
Text: Industrial Microphotonics Company 940nm CW Laser Diode Array Submodules SILVER BULLET TM • Packaged 1, 2, 3 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm PRODUCT CHARACTERISTICS The Silver BulletTM is a fundamental building block for constructing high-power diode
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940nm
785-1064nm
laser2000
ASM940-40
australia heat sink
ASM01C020
ASM02C040
ASM05C055
ASM940-20
CW laser diode
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ODS-186
Abstract: HP4291A MA4FCP305 MA4FCP305-T MA4FCP305-W ODS-186 outline
Text: MA4FCP305 Silicon Flip Chip PIN Diode 1269 Outline Drawing Features n n n n n n n V 3.00 Low Series Resistance : 1.7 Ω Low Capacitance : 50 fF Fast Switching Speed : 20 nS Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion
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MA4FCP305
MA4FCP305-T
MA4FCP305-W
ODS-186
HP4291A
MA4FCP305
MA4FCP305-T
MA4FCP305-W
ODS-186 outline
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Untitled
Abstract: No abstract text available
Text: MA4GP907 GaAs Flip-Chip PIN Diodes Features n n n n n n n V 5.00 Package Outline Low Series Resistance, 4 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed Can be Driven by Buffered TTL Silicon Nitride Passivation
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MA4GP907
MA4GP907
MA4GP907-T
MA4GP907-W
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HUGHES mcw 550
Abstract: hughes welder welder hughes mcw 550 ECCOBOND 56c SN62PRMAB3 relative permittivity beryllium copper ferrite welder ECCOBOND 300 kester Re SOLDER PASTE mcw-550
Text: Ferrodisc and Drop-In* Devices Overview Ferrodisc and Drop-In circulators and isolators manufactured by M/A-COM are ex tremely well suited for all types of microwave integrated circuits MIC’s . The rapidly growing awareness and utilization of these devices in microwave systems of all
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Untitled
Abstract: No abstract text available
Text: MA4GP907 GaAs Flip-Chip PIN Diodes Features n n n n n n n V 4.00 Package Outline Low Series Resistance, 4 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed Can be Driven by Buffered TTL Silicon Nitride Passivation
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MA4GP907
MA4GP907
MA4GP907-T
MA4GP907-W
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