IN1190A diode
Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Text: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1N1183
IN1190
1N1183A
IN1190A
1N1199A
1N1206A
1N2054
1N2068
1N3085
-1N3092
IN1190A diode
an 80771
hfa30pa60
SCR gate drive circuit
A6F diode
HFA120FA60
HF50A060
DT93-1
HFA16PB120
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SCR gate drive circuit
Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
Text: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1N1183
IN1190
1N1183A
IN1190A
1N1199A
1N1206A
1N2054
1N2068
1N3085
-1N3092
SCR gate drive circuit
an 80771
IN1190A diode
20509
Diode 31DQ
HFA25TB60
SD400N
IR 31DQ 03
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OCX1601
Abstract: in107 OCX160 OCX256 IN118 rca 645 iN92 tms 1601
Text: OCX Register Programming Manual Revision 2.1 February 2003 Revision History Revision 1.0, March 2001—Preliminary Release. Revision 2.0, May 2002—Fairchild Semiconductor Preliminary Release. Revision 2.1, February 2003—Corrected references to OCX160.
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2001--Preliminary
2002--Fairchild
2003--Corrected
OCX160.
OCX1601
in107
OCX160
OCX256
IN118
rca 645
iN92
tms 1601
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N38 transistor
Abstract: w38 transistor AR33 crosspoint 256 x 256 ocx 256 E23 transistor AB-39
Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports
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OCX256
85Gb/s
all2593,
MKT-OCX256-DS
N38 transistor
w38 transistor
AR33
crosspoint 256 x 256 ocx 256
E23 transistor
AB-39
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Untitled
Abstract: No abstract text available
Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions
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OCX256
85Gb/s
OCX256L)
OCX256P)
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Scan AV6
Abstract: No abstract text available
Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions
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OCX256
85Gb/s
OCX256L)
OCX256P)
Scan AV6
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IN126P
Abstract: AA-38 AH36 AR24
Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions
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OCX256
85Gb/s
OCX256L)
OCX256P)
IN126P
AA-38
AH36
AR24
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IN96
Abstract: No abstract text available
Text: 128-Channel Digital X-Ray Analog Front End AD8488 Data Sheet FEATURES GENERAL DESCRIPTION 128 integrator channels Correlated double sample error correction CDS Corrects for VOS and LF noise Power consumption per channel Normal: 11 mW Low power: 4 mW Low input leakage current: −1.5 pA typical
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128-Channel
AD8488
AD8488
128-channel,
MS-034-AAF-1
92409-A
255-Ball
BC-255-1)
AD8488KBCZ
IN96
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IN117
Abstract: aa36 in60p diode CORE i3 ARCHITECTURE diode ak38 AA34 crosspoint 256 x 256 ocx 256 in60p in75 iN92
Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports
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OCX256
85Gb/s
MKT-OCX256-DS
IN117
aa36
in60p diode
CORE i3 ARCHITECTURE
diode ak38
AA34
crosspoint 256 x 256 ocx 256
in60p
in75
iN92
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IN117
Abstract: in60p OCX256 IN104 TBGA792 crosspoint 256 x 256 IN126P
Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions
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OCX256
85Gb/s
OCX256L)
OCX256P)
One-5428750,
IN117
in60p
IN104
TBGA792
crosspoint 256 x 256
IN126P
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IN1206A
Abstract: No abstract text available
Text: 1N1199A R THRU 1N3673A(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODES STUD TYPE 12A Features 12Amp Rectifier 50-1000 Volts High Surge Capability Types up to 1000V V RRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +200 Storage Temperature: -65 C to +200
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1N1199A
1N3673A
12Amp
IN1199A
IN1200A
IN1202A
IN1204A
IN1206A
IN3671A
IN3673A
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IN126P
Abstract: IN125P IN117P IN118P IN68P diode ak38 IN121P diode ae38 AF39 OCX256
Text: Preliminary Revised March 2003 OCX256L • OCX256P Crosspoint Switch with LVDS Preliminary • Crosspoint Switch with LVPECL (Preliminary) • 256 configurable I/O ports General Description The OCX256 SRAM-based devices are non-blocking 128 X 128 digital crosspoint switches and are available in LVDS
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OCX256L
OCX256P
OCX256
OCX256P
IN126P
IN125P
IN117P
IN118P
IN68P
diode ak38
IN121P
diode ae38
AF39
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in78
Abstract: IN118 IN116 IN109 IN117 in76 IN103 MS-034 AAF-1 in107 IN104
Text: 128-Channel Digital X-Ray Analog Front End AD8488 Data Sheet FEATURES GENERAL DESCRIPTION 128 integrator channels Correlated double sample error correction CDS Corrects for VOS and LF noise Power consumption per channel Normal: 11 mW Low power: 4 mW Low input leakage current: −1.5 pA typical
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128-Channel
AD8488
AD8488
128-channel,
92409-A
MS-034-AAF-1
255-Ball
BC-255-1)
AD8488KBCZ
in78
IN118
IN116
IN109
IN117
in76
IN103
MS-034 AAF-1
in107
IN104
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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1N4510
Abstract: No abstract text available
Text: 74 DE | ? 2 S 4 b 2 1 DOOlCHb □ * 7 2 9 4 6 2 1 POWEREX INC 74C 0 1 0 9 6 5.2 Condensed Electrical and Thermal Characteristics and Ratings RECTIFIERS 12 TO 35 AM PERES 123 1N4510-11 1N248-50C IN1195-98A 1N2154-60 JED ECTY PE G ETY PE — — — — IN I 183-90
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1N4510-11
1N248-50C
IN1195-98A
1N2154-60
1N3765-68
1N5332
1N4510
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in1200A
Abstract: IN4506 IN1206A IN1204A IN3671A IN3909 IN4507 IN1202 in1198a IN1202A
Text: RICHARDSON/ SILICON DIODES N A T I O N A L EL LZE D • 773^17 0 0 D D 7Q 7 3m ■ NAT sir JE D E C TY P E IN1200A-1206A IN3670A-73A IN5331 IN3890-93 IN4510-11 IN3899 IN3903 N A T IO N A L T Y P E NO. IN1192A-98A IN3909-13 A25 I f m AV Max. average forward
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IN1200A-1206A
IN3670A-73A
IN5331
IN3890-93
IN4510-11
IN3899
IN3903
IN1192A-98A
IN3909-13
IN3910
in1200A
IN4506
IN1206A
IN1204A
IN3671A
IN3909
IN4507
IN1202
in1198a
IN1202A
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N1184 JAN
Abstract: 1N1184 1N119 1n2130
Text: SEN I CO N COnPONENTS INC 2flE D • 8 1 3 5 15 7 0000fl3b □ STUD BASE RECTIFIERS DO-5 CASE lQ RATINGS TO 60.0 AMPS t rr TYPE NUMBER PRV VOLTS VF TEIIR CURRENT AMPERES V TEMP AMPS ?c *R jtA TEMP oC VsM nS RATIO AMPS 1N2488 1N249B 1N250B 1N11B3 1N1183A
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0000fl3b
1n248b
1n249b
1n250b
1n11s3
1n1183a
1n1184
1n1184a
1n1185
1n1185a
1N1184 JAN
1N119
1n2130
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TIC2260
Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184
Text: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500
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DDQD035
MR500
IN5400
IN1612
IN1341A
MR750
IN1199A
IN3208
IN248B
IN1191A
TIC2260
C10601
SC141D
IN5829
IN3492
in540i
IN1190
IN3493
IN1183A
IN1184
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IN1184A
Abstract: IN1190 IN1185A IN1183A IN1184 C220D IN1188 C220B IN3659 C220E
Text: "as dF|dE5A3S4 00DD03b 1 g e n e r a l p u r p o s e r e c t if ie r s 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 3 6 10 AVERAGE RECTIFIED FORWARD CURRENT AMPERES C 30 35 IN3659 IN1183 IN1184 IN1185 IN1186 IN1183A IN1186A IN3289 IN3289A IN3263 IN1187
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00DD03b
IN3659
IN3660
IN3661
IN3563
IN1183
IN1184
IN1185
IN1186
IN1187
IN1184A
IN1190
IN1185A
IN1183A
C220D
IN1188
C220B
C220E
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1N1192A
Abstract: 1N1193A 1N1198A 1N1197A 1N1198 1N1191A 1N1194A 1N1195A 1N1196A
Text: ED AL INDUSTRIES 45E INC 3DTS71ti 0 D 0 D B 7 4 D Q3Q • ESL T '- ò ì - i y HEX. 11/16" ACROSS FLATS .150* MIN. W'-28 , UNF-2A% / B v - PIV SEE C H A R T IQ 22 Is 500 Vf 1.2 150 CASE _ AMPS V O 150 60 AMPS 150 PIV SEE C HAR T ,°C .°c °c STYLE STAMP
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3DTS71ti
0D0D274
11/16-ACROSS
INI19IA-INI198A
1N1191A
1N1192A
1N1193A
1N1194A
1N1195A
1N1196A
1N1198A
1N1197A
1N1198
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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TIC2260
Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834
Text: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200
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MR500
IN5400
IN1612
IN1341A
MR750
IN1199A
IN3208
IN248B
IN1191A
IN2154
TIC2260
t25000
IN1190
IN5829
IN3492
IN1184A
sc1430
jb33
IN2158
in5834
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SD5115
Abstract: IN3492 in1615 IN1202A IN5829 IN3495 IN3491 in3493 IN3880 2N15
Text: GENERAL PURPOSE RECTIFOSS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE102553511 n""""35 11I 820 00035 o r ~ O f - o / lo A V ER A G E REC TIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM V FM Ca s é 3 3
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MR500
MR501
MR502
MR504
MR506
MR508
MR510
IN3491
IN3492
IN3493
SD5115
in1615
IN1202A
IN5829
IN3495
IN3880
2N15
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