Intel 82430
Abstract: IDT70824
Text: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random
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Original
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IDT70824S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
Intel 82430
IDT70824
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PDF
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Intel 82430
Abstract: IDT70824 IDT70824L IDT70824S G84-3
Text: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)
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Original
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IDT70824S/L
35/45ns
20/25/35/45ns
IDT70824S
775mW
IDT70824L
with00:
200mV
Intel 82430
IDT70824
IDT70824L
IDT70824S
G84-3
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PDF
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PN-80-1
Abstract: G84 Package Intel 82430 IDT70824 IDT70824L IDT70824S IDT70824G
Text: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)
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Original
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IDT70824S/L
35/45ns
20/25/35/45ns
IDT70824S
775mW
IDT70824L
PN-80-1
G84 Package
Intel 82430
IDT70824
IDT70824L
IDT70824S
IDT70824G
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PDF
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IDT70824
Abstract: IDT70824L IDT70824S 0824X
Text: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)
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Original
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IDT70824S/L
35/45ns
20/25/35/45ns
IDT70824S
775mW
IDT70824L
IDT70824
IDT70824L
IDT70824S
0824X
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PDF
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Intel 82430
Abstract: IDT70824 IDT70824L IDT70824S
Text: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)
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Original
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IDT70824S/L
35/45ns
20/25/35/45ns
IDT70824S
775mW
IDT70824L
200mV
Intel 82430
IDT70824
IDT70824L
IDT70824S
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PDF
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Intel 82430
Abstract: IDT70824
Text: HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY SARAM IDT70824S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random Access from the other port
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Original
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IDT70824S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
Intel 82430
IDT70824
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PDF
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Intel 82430
Abstract: IDT70824
Text: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random
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Original
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IDT70824S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
Intel 82430
IDT70824
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PDF
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D1 PGA 478
Abstract: Intel 82430 saram idt
Text: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)
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Original
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IDT70824S/L
35/45ns
20/25/35/45ns
IDT70824S
775mW
IDT70824L
200mV
D1 PGA 478
Intel 82430
saram idt
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PDF
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IDT70824
Abstract: IDT70824L IDT70824S
Text: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: • • • • • High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) • Low-power operation
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Original
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IDT70824S/L
35/45ns
20/25/35/45ns
IDT70824S
775mW
IDT70824L
MIL-STD-883,
84-pin
G84-3)
IDT70824
IDT70824L
IDT70824S
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PDF
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2SC4493
Abstract: transistor KT 209 2049C
Text: Ordering number:EN3099 NPN Triple Diffused Planar Silicon Transistor 2SC4493 High-Voltage Amplifier, High-Voltage Switching Applications Package Dimensions unit:mm 2049C [2SC4493] 10.2 4.5 8.8 1.3 20.9 1.6 11.5 • High breakdown voltage. · Small Cob. · High reliability Adoption of HVP process .
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Original
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EN3099
2SC4493
2049C
2SC4493]
O-220MF
2SC4493
transistor KT 209
2049C
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 PART NO. EN G . NO. P O L A R IZ IN G P E G O P T IO N 3099-I2AI 3099-I2BI 50-29-1412 50-29-1462 WITH WITHOUT NOTES; 1. THIS HOUSING FOR USE WITH STANDARD .093/ 2.36 SERIES RECEPTACLES. 2. MATERIAL; I I- UNFILLED POLYESTER, 94V-0, COLOR-BLACK /£\ ONLY REQUIRED WHEN USING PARTS WITH OPTIONAL POLARIZING PEG.
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OCR Scan
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3099-I2AI
3099-I2BI
U2-I469
S3099I2XI
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PDF
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3099P-1-103
Abstract: 3099P-1-500 potentiometer dual 3099P-1-102 3099P-1-203 3099P 3099P-1-205 3099P-1-502 trimpot 100 ohm 3099P-1-504
Text: TRIMPOT A D JU S T M E N T POTENTIOMETER Model 3099 In-Line P otentiom eter C erm et Element 3A " Long FEATURES Actual Size • Stan d ard D IP size TO-116 . • C om p atib le with D IP autom atic insertion equipm ent. • Se a le d to m eet M IL-R -22097 im m ersion
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OCR Scan
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5M/8780/5
3099P-1-100
3099P-1-103
3099P-1-200
3099P-1-203
3099P-1-500
3099P-1-503
3099P-1-101
3099P-1-104
3099P-1-201
3099P-1-103
potentiometer dual
3099P-1-102
3099P-1-203
3099P
3099P-1-205
3099P-1-502
trimpot 100 ohm
3099P-1-504
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY SARAM J d t) IDT70824S/L Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random
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OCR Scan
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IDT70824S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) J d t) Integrated Device Technology, Inc. FEATURES: • • • • • H igh-speed access - M ilitary: 35/45ns (max.) - C om m ercial: 20/25/35/45ns (max.) Low -power operation
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OCR Scan
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IDT70824S/L
35/45ns
20/25/35/45ns
IDT70824S
T70824L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
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PDF
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2049B
Abstract: No abstract text available
Text: Ordering number: EN 3099 No.3099 _ 2 S C 4 4 9 3 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features . High breakdown voltage • Small Cq]j • High reliability adoption of HVP process
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OCR Scan
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PDF
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2SC4493
Abstract: 2049B
Text: Ordering number: EN 3099 No.3099 _ 2 S C 4 4 9 3 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features . High breakdown voltage • Small Cq]j • High reliability adoption of HVP process
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OCR Scan
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2SC4493
800Vicers
2049B
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PDF
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Untitled
Abstract: No abstract text available
Text: y r> HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) H / IDT70824S/L Integrated Device Technology, Inc. FEATURES: • • • • • High-speed access - Military: 3 5/4 5 n s (m ax.) - Com m ercial: 2 0 /2 5 /3 5 /4 5 n s (m ax.)
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OCR Scan
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IDT70824S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
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PDF
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Untitled
Abstract: No abstract text available
Text: S ÏN æ y HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Th e ID T 7 0 8 2 4 is a high-speed 4K x 16-bit Sequential Access Random Access M em ory (S A R A M ). T h e S A RA M
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OCR Scan
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IDT70824S/L
16-bit
0GS101G
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • T h e ID T 7 082 4 is a high-speed 4K x 16-bit Sequential Access Random Access M em ory (S A R A M ). T h e SA RA M
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OCR Scan
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IDT70824S/L
16-bit
IDT70B24S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
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PDF
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029T
Abstract: A-3099-P6A A-3099-0605 A-3099-0607 A-3099-P6B A-3099-P6C A-3099-P6D C26000
Text: II 12 ORDER NO. ENG. NUMBER 9 10 TERMINAL LOCATION SEE CHART MAT'L PEG TYPE 7 8 PLATING (SEE CHART) DIA ‘A’ 6 1 PLATING CODE TERMINAL LOCATION CHART (M=MALE, F=FEMALE, B=BLANK) TERMINAL CIRCU IT LOCATION LOCATION 1 2 4 3 5 6 CODE 10-18-1061 A -3099-P6A
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-3099-P6A
-3099-P6B
-3099-P6C
-3099-P6D
SD-43080-*
U70525
LJ2-I469
U90I83
SA3D996X
SPA-3099-6"
029T
A-3099-P6A
A-3099-0605
A-3099-0607
A-3099-P6B
A-3099-P6C
A-3099-P6D
C26000
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PDF
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A-3099-P4
Abstract: A-3099-P4A A-3099-P4B A-3099-P4C A-3099-P4D A-3099-P4E A-3099-P4F A-3099-P4H A-3099-P4J A-3099-P4K
Text: II 12 PART NO. ENG. NUMBER 9 10 TERMINAL LOCATION MAT'L SEE CHART POLAR. PEG PLATING (SEE CHART) 7 8 TERMINAL LOCATION CHART (M=MALE, F=FEMALE, B=BLANK) 10-18-1041 A-3099-P4 A V -0 YES B 10-18-1042 A -3099-P4A B V-0 YES B TERMINAL LOCATION CODE 1 2 3 4
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OCR Scan
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-3099-P4
-3099-P4A
-3099-P4B
-3099-P4C
-3099-P4D
-3099-P4E
-3099-P4F
-3099-P4H
-3099-P4J
-3099-P4K
A-3099-P4
A-3099-P4A
A-3099-P4B
A-3099-P4C
A-3099-P4D
A-3099-P4E
A-3099-P4F
A-3099-P4H
A-3099-P4J
A-3099-P4K
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PDF
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Untitled
Abstract: No abstract text available
Text: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features * * High-speed access - Military: 35/45ns (max.) - Commercial:20125135145ns (max.) Low-power operation - IDT70824S Active: 775mW(typ.) Standby: 5mW (typ.)
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OCR Scan
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IDT70824S/L
35/45ns
20125135145ns
80-pin
84-pin
IDT70824L
MIL-PRF-38535
775mW
4Kx16Sequential
MO-136,
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PDF
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A-3099-0901
Abstract: C26000 MOLEX assembly of location 5-03008 U2-I469
Text: II 12 PART NO. ENG. NUMBER 10-18-1090 A-3099-0901 A 9 10 TERMINAL LOCATION MAT'L SEE CHART V-0 POLAR. PEG PLATING (SEE CHART) YES B 7 8 6 TERMINAL LOCATION CHART (M=MALE, F=FEMALE, B=BLANK) TERMINAL LOCATION CODE A 1 2 3 1 UNPLATED CIRCUIT LOCATION M 3099
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OCR Scan
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0012T-0
SD-43080-*
U2-I469
SDA-3099-09*
5430999XI
A-3099-0901
C26000
MOLEX assembly of location
5-03008
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PDF
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C26000
Abstract: No abstract text available
Text: 9 PART NO. ENG. NUMBER 10-18-1120 A-3099- 1201 A 10-18-1121 A-3099- 1202 B POLAR. PEG PLATING SEE CHART V-0 YES B V-0 YES B LOCATION MAT'L (SEE CHART) 7 8 1 3099 1 TERMINAL LOCATION CHART (M=MALE, F=FEMALE, B=BLANK) 1 2 3 4 5 6 7 8 9 10 II 12 A M M M M M
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OCR Scan
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000080/I0
SD-43080-PIN
SD-1810â
SD-3099-
U2-1469
2BB00
SDA-3099-12"
3099I2I
C26000
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PDF
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