IMPEDANCE Search Results
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Nichicon Corporation UUD1H101MNL1GSAluminum Electrolytic Capacitors - SMD 50volts 100uF AEC-Q200 |
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UUD1H101MNL1GS | Reel | 419,500 | 500 |
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Nichicon Corporation UCL1V471MNL1GSAluminum Electrolytic Capacitors - SMD 35V470 uF105CSMT AEC-Q200 |
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UCL1V471MNL1GS | Reel | 249,200 | 400 |
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Nichicon Corporation UUD1C221MCL1GSAluminum Electrolytic Capacitors - SMD 16volts 220uF 20% AEC-Q200 |
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UUD1C221MCL1GS | Reel | 172,800 | 900 |
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Nichicon Corporation UCD1H221MNL1GSAluminum Electrolytic Capacitors - SMD 50volts 220uF AEC-Q200 |
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UCD1H221MNL1GS | Reel | 75,000 | 500 |
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Nichicon Corporation UUD1V221MNL1GSAluminum Electrolytic Capacitors - SMD 35volts 220uF AEC-Q200 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UUD1V221MNL1GS | Reel | 50,500 | 500 |
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IMPEDANCE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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3 phase ac sinewave phase inverter single ic
Abstract: U5J diode
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OCR Scan |
MG50Q2YS40 2-94D1A 3 phase ac sinewave phase inverter single ic U5J diode | |
Contextual Info: G T 1 5 J 1 0 2 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 1 0 ± 0 -3 . ¿ 3 .2 ± 0 .2 2 .7 ± 0 .2 . High Input Impedance . High Speed : t£=0.35iJs Max. . Lou Saturation Voltage : VcE(sat)"*.OV(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta«250C) |
OCR Scan |
35iJs Tc-25 Ta-25 | |
MG100Q2YS1Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage: |
OCR Scan |
MG100Q2YS1 MG100Q2YS1 | |
MG400 TOSHIBAContextual Info: TOSHIBA MG400Q1US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG400 1 US51 HIGH P O W ER SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • H igh Input Impedance H ighS peed : tf= 0.3/;s Max. Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.) |
OCR Scan |
MG400Q1US51 MG400 MG400 TOSHIBA | |
SN75435
Abstract: SN74ls194
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OCR Scan |
SN75435 SLRS003A- D2848, 600-mA SN7427 SN74LS194 | |
Contextual Info: T O SH IB A MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 75A) |
OCR Scan |
MG75J1BS11 | |
Contextual Info: TOSHIBA TC74ACT32 Quad 2-Input OR Gate Features: • High Speed: tpcJ = 4.5ns typ. at V cc = 5V • Low Power Dissipation: lcc = 4 |iA (max.) at Ta = 25°C • Com patible with T T L Outputs: V,L = 0 .8 V (max.) V ih = 2 .0 V (min.) • Symmetrical Output Impedance: ll0Hl = I0 l = 2 4 m A |
OCR Scan |
TC74ACT32 | |
MG50H2YS1Contextual Info: MG50H2YS1 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance : tf= 1 . 0/is Max. . High Speed trr = 0 . 5 y s ( M a x .) . Enhancement-Mode . Includes a Complete Half Bridge in one |
OCR Scan |
MG50H2YS1 MG50H2YS1 | |
mg75n2ys
Abstract: LTA 703 S MG75N2YS1 MG75N2 MG75N2Y
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MG75N2YS1 mg75n2ys LTA 703 S MG75N2YS1 MG75N2 MG75N2Y | |
Contextual Info: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode • |
OCR Scan |
GT2QG102 GT20G102 2-10S2C | |
TL431I
Abstract: TL431M TL431MFK TL431AC TL431C TL431CDR 30PPM TL431AI L431c tl4311
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TL431C, TL431AC, TL431I, TL431AI, TL431M, TL431Y SLVS005I TL431 TL431A TL431I TL431M TL431MFK TL431AC TL431C TL431CDR 30PPM TL431AI L431c tl4311 | |
Contextual Info: TOSHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete Half Bridge in One |
OCR Scan |
MG90V2YS40 2-94C1A | |
Contextual Info: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode |
OCR Scan |
MG300J1US51 2-70v MG300J1US51 | |
GT15Q101Contextual Info: GT15Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm #3 2±0.2 MOTOR CONTROL APPLICATIONS. I5.9MAX . High Input Impedance . High Speed : tf= 0 . 5ys Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode I1AXIMUM RATINGS (Ta=25°C) SYMBOL |
OCR Scan |
GT15Q101 2-16C1C GT15Q101 | |
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G50Q2YS50Contextual Info: TOSHIBA MG50Q2YS50A TEN TATIVE TO S H IB A G TR M O D U LE SILICO N IM C H A N N EL IG B T MG50Q2YS50A HIGH PO W ER SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load |
OCR Scan |
MG50Q2YS50A G50Q2YS50A G50Q2YS50 | |
Contextual Info: UC5661 y UNITRODE Ethernet Coaxial Impedance Monitor FEATURES DESCRIPTION • Compatible with IEEE 802.3 10Base5, 10Base2, and 10BaseT The UC5661 is a monolithic integrated circuit which functions as an Ether net Coaxial Impedance Monitor CIM . This IC is intended to augment the |
OCR Scan |
10Base5, 10Base2, 10BaseT UC5661 UC5661 400ns. 475ns | |
300Q1US41Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V |
OCR Scan |
MG300Q1US41 00A/ius 300Q1US41 | |
Contextual Info: TOSHIBA TC74AC86 Quad Exclusive OR Gate Features: • High Speed: tpd = 4.4ns typ. at Vcc = 5V • Low Power Dissipation: lcc = 4(iA (max.) at Ta = 25°C • High Noise Immunity: V NH = V NIL = 2 8% V cc (min.) • Symmetrical Output Impedance: ll0Hl = l0i = 24mA |
OCR Scan |
TC74AC86 74AC86 TC74ACT86 | |
GT60M101Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0 |
OCR Scan |
GT60M101 --15V GT60M101 | |
Contextual Info: TOSHIBA TC74AC164 8-bit Shift Register S-IN, P-OUT Features: • High Speed: fmax = 170MHz (typ.) at Vco = 5V • Low Power Dissipation: • High Noise Immunity: VN,H=VNIL=28% Voc (min.) • Symmetrical Output Impedance: llOHl = I o l = 24mA (min.). Capability of driving 50ft transmission lines. |
OCR Scan |
TC74AC164 170MHz | |
MG50J2YS1
Abstract: IGBT MG50J2YS1
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OCR Scan |
MG50J2YS1 MG50J2YS1 IGBT MG50J2YS1 | |
Contextual Info: u 1J POWER SPLITTER .19 MAX 7 1 TRAK MICROWAVE POWER SPLITTER .3 5 S P L /2 E F - 0 1 / 7 5 SPECIFICATIONS: FREQUENCY LOSS VSWR AMP BALANCE PHASE BALANCE ISOLATION POWER IMPEDANCE 5 0 0 - 2 0 0 0 MHz 0 .8 dB TYP, 2 .0 dB MAX 1.5:1 MAX ± 0 .1 dB TYP, ± 0 .3 dB MAX |
OCR Scan |
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C3452
Abstract: C3450
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OCR Scan |
MC3450, MC3452 C3452 C3450 | |
Contextual Info: TO SHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.) |
OCR Scan |
MG75Q2YS50 Tempe30 |