IMI 706 Search Results

0X00

Abstract: 16C550 LM3S3748 ti SIDE marking marking code C2 diode
Contextual Info: P R E L IMI NA RY LM3S3748 Microcontroller D ATA SH E E T D S -LM3 S 3 748 - 2 8 3 0 Copyr i ght 2007- 2008 Lum i na r y M i c ro, Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE, EXPRESS OR

Pioneer SSA 40

Abstract: G4060 LT 6732 IMI6140 G4420
Contextual Info: /y INTERNATIONAL MICROCIRCUITS INCORPORATED ^ G io v o o /i/û o o f / V ^ u y I r ’; ~ j> LTj _ < ¿6 ' >L ^ '- i-G -p - PRODUCT FEATURES IM I DESIGN CYCLE FLOWCHART 2.0 and 3.5 Micron CMOS Single and Dual Level Metal cr~ Up to 6200 2-input NAND equivalents ^

Contextual Info: 2SK2958 L ,2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-568B (Z) 3rd. Edition June 1, 1998 Features • Low on-resistance • = 5.5mi2 typ. 4V gate drive devices. • High speed switching R d s ( o„) Outline LDPAK 2SK2958(L),2SK2958(S)

2SD700

Abstract: DDD7772 DC-AC Power Inverter
Contextual Info: TOSHIBA SL {DISCRETE/OPTO> DE | T D ^ B S Q 0QD7771 t | ~ = T-33-35 S IL IC O N NPN T R IP L E D IF F U SE D M E S A TYPE _ D A R L IN G T O N POWER _ 2SD700 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. g-04.o±aa

4053l

Abstract: 1453l 1658525-9
Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - By - 5 4 2 3 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. REVISIONS DIST GP 00 LTR ELECTRICAL PROPERTIES CURRENT RATING 1 AMP INSULATION RESISTANCE > 5 x 1 0 9 OHMS @ 500 VDC DWV > 1 0 0 0 VRMS AT SEA LEVEL

Hitachi 2SJ

Abstract: Hitachi DSA002751
Contextual Info: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A • Capable of 4 V gate drive

Contextual Info: 2SK1880 L , 2SK1880(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • N o secondary breakdown • Suitable for Switching regulator Outline 2SK1880(L), 2SK1880(S)

Contextual Info: IMI145152 FREQUENCY SYNTHESIZER CMOS LSI PARALLEL TUNING PLL FREQUENCY SYNTHESIZER February 1996 PRODUCT FEA TURES PRODUCT DESCRIPTION T h e IM I 1 4 5 1 5 2 is a m e m b e r o f a fa m ily o f p h a s e lo c k lo o p >1 50 Mhz typical input frequency s y n th e s iz e r Ics fro m In te r n a tio n a l M ic ro c ic ru ic ts . T h is p a rt is

FP7 Metal Oxide

Abstract: HL500 marking B53 n 332 ab
Contextual Info: A COMPANY OF METAL OXIDE FILM Power type H./HR./HL. VISHAY C O M P O N E N T S U .K . Features • low inductance • low voltage coefficient • suitable for water cooling • excellent overload characteristics • suitable for dumm y load applications

Contextual Info: SANYO SEMICONDUCTOR CORP S 3 e ]> 7 * H 7 0 7 fa OOCHMfll TTI « T S A J r- H l - 0 5 - 0 [Ordering number: EN353*| Monolithic Linear IC LA4571MB SA \YO F Low-voltage Headphone Amplifier for Stereo Audio i PINOUT OVERVIEW The LA457JMB is * low-voliage, stereo headphone

SB-0016

Contextual Info: Philip» Semiconductor* Product »pacification 20-bit bus interface latch 3-State MB2841 FEATURES DESCRIPTION • High speed parallel latches The MB2841 Bus Interface register is designed to provide extra data width for wider data/address paths of buses carrying parity.

HY 1906 transistor

Abstract: AME8816AEHA250 p 8123 transistor 7492 pinout diagram AME8816AEDV150 AME8816AEDV180 AME8816AEDV250 AME8816AEDV330 AME8816AEDV475 AME8816AEHA150
Contextual Info: AME, Inc. AME8816 1.5A CMOS LDO n General Description n Functional Block Diagram Fixed Versions The AME8816 family of positive, linear regulators feature low quiescent current (45µA typ.) with low dropout voltage, making them ideal for battery applications.

XV21

Contextual Info: ONY |_ ICX059ALB 1/3 inch CCD Image Sensor for CCIR B/W Camera Description 14 pin DIP Ceramic The ICX059ALB is an interline transfer CCD solid-state image sensor suitable for CCIR B/W video cameras. High sensitiveness and low dark current are achieved

sony 330

Abstract: ccd sony super HAD II CXD1267 ICX207AL LTCM500S super had ccd diode gp 537
Contextual Info: SONY ICX207AL & Ä 4 .5 m m ' 1 / 4 S Ü C C IR & ICX207ALÜ, C C IR ^ ^ : (O yuA tfc > f super HAD CCD& '4ÏOfâJÏÏKX *9., « p dbICX087AOc£î U $J£, t^ o 7 - r - ; i / K ü Ä i l 5 : ^ ö ü L ^ ^ : 'e , Ifiis $ riiO ^ y jr- 'Jf i lOmm <£>14 fc? ^ DIP

rx3e

Abstract: RX-3E signal path designer rx3e 8 pin
Contextual Info: in U AP-706 APPLICATION NOTE DRAM Controller for 40 MHz i960 CA/CF Microprocessors February 2, 1995 Order Number: 272655-001 I 1-539 AP-706 1.0 INTRODUCTION This application note describes a DRAM controller for use with the i960® CF 40 MHz microprocessor. Other

Contextual Info: SONY ICX0 5 6 A K B 1/4-inch CCD Image Sensor for NTSC Color Video Camera Description The ICX056AKB is an interline transfer CCD solid- 13 pin PCA Ceramic state im age sensor suitable tor NTSC 1/4-inch color video cameras. High sensitivity is achieved through the

Nippon capacitors

Contextual Info: HB56UW472EJNB Series, HB56UW464EJNB Series 4.194.304-word x 72-bit High Density Dynamic RAM Module 4.194.304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-723A Z Rev.1.0 Feb. 20, 1997 Description The HB56UW 472EJNB, HB56UW 464EJNB belong to 8 Byte DIMM (Dual In-line Memory M odule)

3AR3

Abstract: 1372C sony 17 v2 16pin rfe 945H
Contextual Info: SONY ICX406BQF Diagonal 8.98mm Type 1/1.8 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX406BQF is a diagonal 8.98mm (Type 1/1.8) interline CCD solid-state image sensor with a square pixel array and 3.98M effective pixels. Frame readout

TDA1230

Abstract: tda 7223 SERCON410
Contextual Info: SGS-THOMSON S E R C O N 4 1 QB [ M 3 [ B § iU IC T i( M D S § SERCOS INTERFACE CONTROLLER PRELIMINARY DATA Single-chip controller for SERCOS interface Real time communication for industrial control systems 8/16-bit bus interface, Intel and Motorola con­

21RB

Abstract: ERF640
Contextual Info: S e m i c o n d u c t o r LM359 Dual, High Speed, Programmable, Current Mode Norton Amplifiers General Description Features The LM359 consists of two current differencing (Norton) in­ put amplifiers. Design emphasis has been placed on obtain­ ing high frequency performance and providing user program­

IRF P552H

Abstract: p552h irf 552h MB88551 LA 7674 j004 FPT-80P-M01 PF202 MB88551H MB68P551H
Contextual Info: FUJITSU HIGH-PERFORMANCE CMOS SINGLE-CHIP 4-BIT MICRO­ COMPUTER WITH ONE TIME PROMl MB88P551H MB88P552H TM333-B872: February 1987 ONE TIME PROGRAMMABLE READ ONLY MEMORT VERSION OF HIGH-SPEED CMOS SINGLE-CHIP 4-BIT MICROCOMPUTER WITH MULTI I/O AND A/D CONVERTER

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

TC88401F

Abstract: tc511000
Contextual Info: I l TC88401F-1 B C1D'Î72MC| 0 Q 5 S 3 Ô 7 Ifib m j O S 3 TOS H IB A 1. UC/UP b4E » GENERAL TC88401F is a voice recording C M O S L S I using the APC-M LQ (Adaptive Predictive Coding w ith Maximum Likelihood Quantization) Method. The voice recording / playback system is configured

DIGRAM FOR TEST IC 324

Abstract: 54s00 tsx 07 nano yd 803 1N41 54S04 e fzr lts 543 HT 12E APPLICATION invertor
Contextual Info: .MIL-K-32510/708 13P5 T J g-LVolX 1W5 ' MIL -M-38510/70A 2 December 19Î2 Q u a l i f i c a t i o n re q u i reme n ts have been removed f o r d e v ic e typ e 10 see i . 1 . M ILIT ARY SPECIF IC ATIO N MICROCIRCUITS, D IG IT A L . 3 IP 0 L A * , SCHOTTKY T T L, «AMO GATES