IMD2 TRANSISTOR Search Results

IMD2 transistor

Contextual Info: ROHM CO LTD HOE D l & Z & W • QQ0b3&7 N y > v 'X £ /Transistors IMD2 1 BHRHM IMD2 - " O M —£ — " " T '-" — . 11 ' ■ J Z V 3 - 9 0 M /inverter Driver Isolated Mini-Mold Device • i'Hfé'tfSSEI/Dlme.nslons Unit : mm 1) SM T (S C -59) ¿ | g ] - f t « f C

IMD2 transistor

Abstract: BHRH
Contextual Info: ROHM CO LTD HOE D • l&Z&W QQ0b3&7 1 BHRHM N y > v 'X £ /Transistors IMD2 - " IMD2 O M —£ — " " T '-" — . 11 ' ■ J Z V 3 - 9 0 M /inverter Driver Isolated Mini-Mold Device • i'Hfé'tfSSEI/Dlme.nslons Unit : mm 1) SM T (S C -59) ¿ | g ] - f t « f C

Contextual Info: IMD2 /T ra n s is to rs IM D2 7 < V U — ~t ~ " j K $ — " E — J U K ~ f / ’v / X •i >/'v — *1 F y ' f /Vlnverter Driver Isolated Mini-Mold Device V r > J V ; V d i- r 1 1 SMT SC-59) < t( s ) - W S C 2f@C7) h A'"A T i ' -5 o -3 2) U, f £ 7 '< f c - 5 0

DIN45004B

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line CA922 CA922A VHF/UHF CATV A m plifiers Designed for broadband applications requiring low-distortion and high output capability. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion-implanted arsenic emitter transistors and an all gold

DIN45004B

Abstract: DIN-45004B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line CA912 CA912A VHF/UHF CATV Am plifier . . . designed for broadband applications requiring low -d isto rtio n and high output capability. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion-im planted arsenic em itter transistors and an all

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line CA901 CA901A VHF/UHF CATV Amplifiers . . . designed for broadband applications requiring low-distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion-implanted arsenic emitter transistors and an all gold metal system.

TPV597

Contextual Info: , Dnc. ^s.mi- lonciuct oi The RF Line UHF Linear Power Transistor TPV597 . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.

IMD2 transistor

Abstract: 470-860 mhz Power amplifier w
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity.

Contextual Info: THS4509 www.ti.com SLOS454 – JANUARY 2005 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER • • • • • • • • • • • Fully Differential Architecture Centered Input Common-mode Range Minimum Gain of 2V/V 6 dB Bandwidth: 1900 MHz (100 mVpp, G = 10 dB,

Contextual Info: THS4509 www.ti.com SLOS454B – JANUARY 2005 – REVISED JANUARY 2006 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER FEATURES • • • • • • • • • • • • • • • DESCRIPTION Fully Differential Architecture Centered Input Common-mode Range

SLOA054

Abstract: ADS5500 SLMA002 SLMA004 THS4509 THS4509RGTR THS4509RGTT
Contextual Info: THS4509 www.ti.com SLOS454 – JANUARY 2005 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER • • • • • • • • • • • Fully Differential Architecture Centered Input Common-mode Range Minimum Gain of 2V/V 6 dB Bandwidth: 1900 MHz (100 mVpp, G = 10 dB,

opamp ic single powersupply

Abstract: ADS5500 SLMA002 THS4508 THS4509 THS4509RGTR THS4509RGTT THS4511 THS4513 SLOA054
Contextual Info: THS4509 www.ti.com SLOS454D – JANUARY 2005 – REVISED FEBRUARY 2007 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER FEATURES • • • • • • • • • • • • • • • DESCRIPTION Fully Differential Architecture Centered Input Common-mode Range

Contextual Info: THS4509 www.ti.com SLOS454B – JANUARY 2005 – REVISED JANUARY 2006 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER FEATURES • • • • • • • • • • • • • • • DESCRIPTION Fully Differential Architecture Centered Input Common-mode Range

Contextual Info: THS4509 www.ti.com SLOS454A – JANUARY 2005 – REVISED SEPTEMBER 2005 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER FEATURES • • • • • • • • • • • • • • • DESCRIPTION Fully Differential Architecture Centered Input Common-mode Range

ADS5500

Abstract: SLMA002 SLMA004 SLOA054 THS4509 THS4509RGTR THS4509RGTT
Contextual Info: THS4509 www.ti.com SLOS454 – JANUARY 2005 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER • • • • • • • • • • • Fully Differential Architecture Centered Input Common-mode Range Minimum Gain of 2V/V 6 dB Bandwidth: 1900 MHz (100 mVpp, G = 10 dB,

SMD Transistors w27

Abstract: ADS5500 QFN-16 THS4508 THS4509 THS4509RGTR THS4509RGTT THS4511 THS4513
Contextual Info: THS4509 www.ti.com . SLOS454G – JANUARY 2005 – REVISED MAY 2008 WIDEBAND, LOW-NOISE, LOW DISTORTION, FULLY DIFFERENTIAL AMPLIFIER

linear amplifier 470-860

Abstract: SD1732 THU2600A-R
Contextual Info: THU2600A-R 25 W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors with diffused emitter ballast resistors to enhance ruggedness and reliability. •

Contextual Info: THS4509 www.ti.com . SLOS454G – JANUARY 2005 – REVISED MAY 2008 WIDEBAND, LOW-NOISE, LOW DISTORTION, FULLY DIFFERENTIAL AMPLIFIER

Contextual Info: THS4509 www.ti.com . SLOS454G – JANUARY 2005 – REVISED MAY 2008 WIDEBAND, LOW-NOISE, LOW DISTORTION, FULLY DIFFERENTIAL AMPLIFIER

SLOA054

Abstract: ADS5500 SLMA002 SLMA004 THS4509 THS4509RGTR THS4509RGTT transformer 50 Hz RK73H1ETTP
Contextual Info: THS4509 www.ti.com SLOS454 – JANUARY 2005 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER • • • • • • • • • • • Fully Differential Architecture Centered Input Common-mode Range Minimum Gain of 2V/V 6 dB Bandwidth: 1900 MHz (100 mVpp, G = 10 dB,

sd4100

Abstract: class-A amplifier THU2640
Contextual Info: THU2640 60 W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors with diffused emitter ballast resistors to enhance ruggedness and reliability. •

ADS5500

Abstract: SLMA002 SLMA004 SLOA054 THS4509 THS4509QRGTRQ1
Contextual Info: THS4509-Q1 www.ti.com. SLOS547 – NOVEMBER 2008 WIDEBAND LOW-NOISE LOW-DISTORTION FULLY DIFFERENTIAL AMPLIFIER

Contextual Info: THS4509 www.ti.com SLOS454F – JANUARY 2005 – REVISED OCTOBER 2007 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • 1 Fully Differential Architecture Centered Input Common-mode Range

SLOS454H

Abstract: Transformer ADT2-1T ADS5500 QFN-16 THS4508 THS4509 THS4509RGTR THS4509RGTT THS4511 THS4513
Contextual Info: THS4509 www.ti.com SLOS454H – JANUARY 2005 – REVISED NOVEMBER 2009 WIDEBAND, LOW-NOISE, LOW-DISTORTION, FULLY-DIFFERENTIAL AMPLIFIER Check for Samples: THS4509 FEATURES 1 • • • • • • • • • • • • • • 23 DESCRIPTION Fully-Differential Architecture