IGT 3200 Search Results
IGT 3200 Result Highlights (1)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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VSP3200Y |
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16-bit, 8 MSPS 3-Channel AFE for CCD/CMOS/CIS Sensors 48-LQFP |
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IGT 3200 Price and Stock
Abracon Corporation ABM8-32.000MHZ-10-DIG-TCrystals CRYSTAL 32.000MHZ 10PF SMD |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ABM8-32.000MHZ-10-DIG-T |
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IGT 3200 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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thyristor to48
Abstract: C819 smd THYRISTOR allied controls relays
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IRKT71/06 IRKD56/08 IRKT41/10 IRKH71/10 IRKT26/12 IRKT56/12 IRKH91/12 PVD1352 PVD1354 PVD3354 thyristor to48 C819 smd THYRISTOR allied controls relays | |
Contextual Info: SEMISTACK - Thyristor Circuit M3CK Id / Irms 2300 Symbol Id M3C Tamb = 35 °C Irms W1C °C Tamb = Presspack Stack 1 Three-pulse star with cathode-side connected 2 it di/dt)cr (dv/dt)cr VGT IGT Rthja SKT 940/40 (P 0,53/600 + P 0,53/350 + P 0,53/230) mm RC |
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60Hz/1min. | |
Contextual Info: SEMISTACK - Thyristor Circuit M3CA Id / Irms 2300 Symbol Id M3C Tamb = 35 °C Irms W1C °C Tamb = Presspack Stack 1 Three-pulse star with anode-side connected 2 it di/dt)cr (dv/dt)cr VGT IGT Rthja SKT 940/40 (P 0,53/600 + P 0,53/350 + P 0,53/230) mm RC Features |
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60Hz/1min. | |
P410CH60-65
Abstract: N1847TD580-650 N2503TC450-520 P0349LC600-650 P0769NC600-650 P201CH60-65 P440CH32-36 P480CH30-32 N560FH p1184n
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200/Vµ P0349LC600-650 125oC) 125oC 125oC, 101A322 P410CH60-65 N1847TD580-650 N2503TC450-520 P0349LC600-650 P0769NC600-650 P201CH60-65 P440CH32-36 P480CH30-32 N560FH p1184n | |
CP08G
Abstract: cp08e CQ08G CL16C CL16D CL16E CL16F CL16G CL16J CM16C
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CL16C CL16D CL16E CL16F H-101 CP08G cp08e CQ08G CL16C CL16D CL16E CL16F CL16G CL16J CM16C | |
Contextual Info: Date:- 15 May, 2003 Data Sheet Issue:- 1 Medium Voltage Thyristor Types K1121NC320 to K1121NC360 Old Type No.: P440CH32-36 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 3200-3600 V VDSM Non-repetitive peak off-state voltage, (note 1) |
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K1121NC320 K1121NC360 P440CH32-36 K1121NC360 | |
TBK5163203DH
Abstract: SCR thyristor test TBK5163203 TBK516 2000A thyristor scr
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TBK5163203DH 600V-3200A 200ma potent4000 SCR thyristor test TBK5163203 TBK516 2000A thyristor scr | |
K1121NC
Abstract: P440CH32-36 k1121 27801 pulse fuse 8kA P440-C
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K1121NC320 K1121NC360 P440CH32-36 K1121NC360 K1121NC P440CH32-36 k1121 27801 pulse fuse 8kA P440-C | |
TBK5163203Contextual Info: TBK5_3203 Phase Control Thyristor 3200 Amperes 1600 Volts Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 724 925-7272 WWW,PWRX.COM The TBK5 is a high voltage, high current disc pack SCR employing distributed gate structure. This design allows the SCR to be reliably operated at |
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TBK5163203DH 600V-3200A 200ma TBK5163203 | |
Contextual Info: T9S7_1403 Phase Control Thyristor Powerex, Inc., 173 Pavilion Ln, Youngwood, Pennsylvania 15697-1800 724 925-7272 www.pwrx.com 1400 Amperes 3200 Volts The T9S7 SCR employs a Dual-Bar amplifying gate structure which allows the SCR to be reliably operated at high di/dt and high dv/dt |
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T9S7321403DH 200V-1400A 200ma | |
prx thyristor
Abstract: scr prx TA20 thyristor t 500 n 1800
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TAK7321803 prx thyristor scr prx TA20 thyristor t 500 n 1800 | |
Contextual Info: T9S7_1403 Phase Control Thyristor Powerex, Inc., 173 Pavilion Ln, Youngwood, Pennsylvania 15697-1800 724 925-7272 www.pwrx.com 1400 Amperes 3200 Volts The T9S7 SCR employs a Dual-Bar amplifying gate structure which allows the SCR to be reliably operated at high di/dt and high dv/dt |
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T9S7321403DH 200V-1400A 200ma | |
prx thyristor
Abstract: thyristor t 500 n 1800 thyristor disc Vrrm 2000 TA20 DISC THYRISTOR
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TAK7321803 prx thyristor thyristor t 500 n 1800 thyristor disc Vrrm 2000 TA20 DISC THYRISTOR | |
R1127NC
Abstract: R1127NC32 rc snubber calculation Westcode N thyristor Semiconductors R1127N RC snubber thyristor design
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R1127NC32# R1127NC36# D315CH21-36) R1127NC R1127NC32 rc snubber calculation Westcode N thyristor Semiconductors R1127N RC snubber thyristor design | |
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Gate Turn-off Thyristor 100V 1000A
Abstract: scr phase control battery charger thyristor SCR 1000A scr battery charger scr trigger battery charger thyristor Phase Control battery charger 3000A thyristor scr TBS7 IGT 3200
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TBS716P13 Gate Turn-off Thyristor 100V 1000A scr phase control battery charger thyristor SCR 1000A scr battery charger scr trigger battery charger thyristor Phase Control battery charger 3000A thyristor scr TBS7 IGT 3200 | |
Contextual Info: C702 Phase Control Thyristor Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1000 Amperes 3200 Volts The C702 is a medium voltage, high current disc pack SCR employing a Bar gate, amplifying gate structure. This amplifying gate design allows the SCR to |
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C702CB 200V-1000A 200ma | |
thyristor powerex C702CB
Abstract: 726E-04 SCR 1000A C702 diode C702 C702CB thyristor cp 08
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C702CB 200V-1000A 200ma thyristor powerex C702CB 726E-04 SCR 1000A C702 diode C702 thyristor cp 08 | |
Contextual Info: DCR1800F18 Phase Control Thyristor DS6067 June 2011 LN28484 KEY PARAMETERS FEATURES • Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 1800 V 1800 A 32000 A 1000 V/µs 200 A/µs * Higher dV/dt selections available APPLICATIONS |
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DCR1800F18 DS6067 LN28484) DCR1800F16 DCR1800F14 DCR1800F12 150mA, | |
DCR1800F18Contextual Info: DCR1800F18 Phase Control Thyristor DS6067 June 2011 LN28484 KEY PARAMETERS FEATURES • Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 1800 V 1800 A 32000 A 1000 V/µs 200 A/µs * Higher dV/dt selections available APPLICATIONS |
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DCR1800F18 DS6067 LN28484) DCR1800F16 DCR1800F14 DCR1800F12 150mA, DCR1800F18 | |
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 2075 A 3260 A 32000 A 0.96 V 0.285 mΩ Ω Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-02 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications |
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18H4200 5SYA1046-02 18H4200 18H4000 18H3600 CH-5600 | |
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1800 A 2820 A 32000 A 1.2 V 0.43 mΩ Ω Phase Control Thyristor 5STP 18M6500 Doc. No. 5SYA1010-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications |
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18M6500 5SYA1010-03 18M6500 18M6200 18M5800 CH-5600 | |
westcode n 600 ch 18
Abstract: 74018 snubber report
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99T16 P480CH20 P480CH32 P480CH28D8G0 P480CH32. westcode n 600 ch 18 74018 snubber report | |
mmo-90 14 106
Abstract: w3c2 mmo-90 14 io6 3x82 SOT-227 pcb 9012IO
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2x30-. 2x45-. 2x60-. mmo-90 14 106 w3c2 mmo-90 14 io6 3x82 SOT-227 pcb 9012IO | |
HIGH VOLTAGE THYRISTOR
Abstract: THYRISTOR MODULE IXYS MCC 310-14io1 162-16io1 mcc95 16 101 IXYS MCC 162 THYRISTOR MODULE MCC 25 ixys mcc 26-16io1 THYRISTOR MODULE IXYS MCC 97 THYRISTOR MODULE IXYS MCC 310 ixys mcc 132 12
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E2-12 E2-16 E2-20 E2-24 E2-26 162CC44 MCC26 MCC19 HIGH VOLTAGE THYRISTOR THYRISTOR MODULE IXYS MCC 310-14io1 162-16io1 mcc95 16 101 IXYS MCC 162 THYRISTOR MODULE MCC 25 ixys mcc 26-16io1 THYRISTOR MODULE IXYS MCC 97 THYRISTOR MODULE IXYS MCC 310 ixys mcc 132 12 |