IGBT WIT FREQUENCY RANGE Search Results

application of microprocessor in washing machine

Abstract: DC SERVO MOTOR closed loop pwm speed control 3 phase inverter ic ir2136 closed loop control of servo motor in microcontroller IRMCK201 IRMCK201 IC circuit diagram ac motor servo control circuit diagram IRMCK202 drill motor speed control circuit C source code resolver speed motor
Contextual Info: High Performance AC Drive by Single Chip Motion Control Engine IC Introduction of new breed of digital motion control IC :IRMCK201 and IRMCK203 Toshio Takahashi International Rectifier Director of Engineering Digital Control IC Design Center Abstract The IRMCK201 and IRMCK203 are new integrated

ST T4 3660

Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Contextual Info: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast

ST T4 3660

Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
Contextual Info: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in

Contextual Info: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in

irf 3250

Abstract: ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410
Contextual Info: PD - 94739 IRG4PH40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

IGbt wit frequency range

Abstract: t1624 035H IRFPE30
Contextual Info: PD- 95188 IRG4PH40UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

Contextual Info: PD - 94623A IRGP35B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

IRGP35B60PD

Abstract: IRFP250 IRFPE30 035H 30ETH06 ci 22A marking code
Contextual Info: PD - 94623 IRGP35B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

035H

Abstract: 8ETH06 IRFPE30 forward smps ic 200A 600V FET
Contextual Info: PD - 95558 SMPS IGBT IRGP20B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free Equivalent MOSFET Parameters 

Contextual Info: AY_D-1W & BY_D-1W SERIES 1W,FIXED INPUT, ISOLATED & UNREGULATED DUAL / SINGLE OUTPUT DC-DC CONVERTER RoHS FEATURES PRODUCT PROGRAM 12KVDC Isolation DIP Package Temperature Range: -40°C ~ +85°C No Heat sink Required No External Component Required Low isolation capacitance

035H

Abstract: IRFPE30 IRGP4050PBF
Contextual Info: PD-95743 IRGP4050PbF PDP Switch Features § § § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits

Contextual Info: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

Contextual Info: PD-95743 IRGP4050PbF PDP Switch Features § § § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits

igbt based welding machine

Abstract: IRFR12
Contextual Info: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A

Contextual Info: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A

irg7ph46

Abstract: 600v 20a IGBT driver tr marking code 25h irg7ph46uep marking code 117A IRG7PH46UPBF 8200 T igbt driver applications
Contextual Info: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

irg7ph42upbf

Abstract: marking code 5339
Contextual Info: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

Contextual Info: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

Contextual Info: PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

irg7ph35upbf

Abstract: IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A
Contextual Info: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

transistor VCE 1000V

Abstract: TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30
Contextual Info: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

035H

Abstract: IRFPE30
Contextual Info: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: 38C5 Group REJ03B0028-0200 Rev.2.00 Nov 23, 2005 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION The 38C5 group is the 8-bit microcomputer based on the 740 family core technology. The 38C5 group has an LCD drive control circuit, an A/D converter, and a serial interface as additional functions.

Contextual Info: PD- 95188A IRG4PH40UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter