Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH20N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 650V 20A 2.5V 28ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH20N65C3
IC110
O-247
20N65C3
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375A1
Abstract: IXXH75N60C3
Text: Advance Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60C3
IC110
O-247
062in.
75N60C3
375A1
IXXH75N60C3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH75N60C3
O-247
Non60
75N60C3
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50N60C3
Abstract: No abstract text available
Text: Preliminary Technical Information IXXH50N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C
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IXXH50N60C3D1
IC110
O-247
IF110
50N60C3
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75n60
Abstract: No abstract text available
Text: Preliminary Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60C3
IC110
O-247
062in.
75N60C3
75n60
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transistor C013
Abstract: No abstract text available
Text: VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 90 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz
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VS-GB90SA120U
OT-227
E78996
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
transistor C013
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Untitled
Abstract: No abstract text available
Text: VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 90 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz
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VS-GB90SA120U
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYA20N65C3 IXYH20N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 20A 2.5V 28ns TO-263 AA (IXYA) Symbol Test Conditions Maximum Ratings
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IXYA20N65C3
IXYH20N65C3
IC110
O-263
20N65C3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.2V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH40N65C3
IC110
O-247
40N65C3H1
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH75N60C3D1
O-247
IF110
75N60C3
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Untitled
Abstract: No abstract text available
Text: IXYH40N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.20V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH40N65C3H1
IC110
O-247
IF110
40N65C3H1
10-30-12/DMHP19-067F
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXXH30N60C3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.2V 32ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH30N60C3
IC110
O-247
30N60C3D1
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150-A54
Abstract: No abstract text available
Text: Advance Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60C3D1
IC110
O-247
IF110
062in.
75N60C3
150-A54
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IXXH75N60C3D1
Abstract: 75N60C3
Text: Preliminary Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60C3D1
IC110
O-247
IF110
062in.
75N60C3
IXXH75N60C3D1
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.2V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH40N65C3
IC110
O-247
40N65C3H1
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30N60C3D
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH30N60C3D1
O-247
IF110
30N60C3D1
30N60C3D
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.2V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings
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IXYH40N65C3H1
IC110
O-247
IF110
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IXYH40N65C3H1
Abstract: 40N65
Text: Advance Technical Information IXYH40N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 650V 40A 2.2V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IXYH40N65C3H1
IC110
O-247
IF110
062in.
40N65C3H1
IXYH40N65C3H1
40N65
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DS100493
Abstract: No abstract text available
Text: Preliminary Technical Information IXXH60N65C4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V VGES VGEM
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IXXH60N65C4
IC110
O-247
60N65C4
DS100493
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXXH110N65C4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V
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IXXH110N65C4
IC110
110N65C4
1-30-13-A
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60N65C4
Abstract: No abstract text available
Text: Advance Technical Information IXXH60N65C4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V VGES
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IXXH60N65C4
IC110
O-247
60N65C4
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYP20N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM
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IXYP20N65C3D1M
IC110
IF110
20N65C3
0-13-A
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IXXH110N65C4
Abstract: No abstract text available
Text: Advance Technical Information IXXH110N65C4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V VGES
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IXXH110N65C4
IC110
110N65C4
IXXH110N65C4
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GB75SA120UP
Abstract: No abstract text available
Text: GB75SA120UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz
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GB75SA120UP
2002/95/EC
OT-227
OT-227
11-Mar-11
GB75SA120UP
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