MGP20N40CL
Abstract: NT 407 F TRANSISTOR TO 220 MGP20N40CL-D
Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N40CL/D
MGP20N40CL
MGP20N40CL/D*
MGP20N40CL
NT 407 F TRANSISTOR TO 220
MGP20N40CL-D
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NT 407 F TRANSISTOR TO 220
Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N40CL/D
MGP20N40CL
NT 407 F TRANSISTOR TO 220
MOTOROLA TRANSISTOR T2
NT 407 F MOSFET TRANSISTOR
MGP20N40CL
632 transistor motorola
mosfet ignition coil
NT 407 F TRANSISTOR
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N14CL/D
MGP20N14CL
MGP20N14CL/D*
NT 407 F TRANSISTOR TO 220
NT 407 F MOSFET TRANSISTOR
NT 407 F TRANSISTOR
NT 407 F power transistor
mosfet 407
MGP20N14CL
MOTOROLA TRANSISTOR TO-220
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MGP20N40CL
Abstract: NT 407 F power transistor NT 407 F TRANSISTOR TO 220
Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N40CL/D
MGP20N40CL
MGP20N40CL
NT 407 F power transistor
NT 407 F TRANSISTOR TO 220
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NT 407 F TRANSISTOR TO 220
Abstract: 108 motorola transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR motorola mosfet 632 transistor motorola 221A-09 MOTOROLA TRANSISTOR MGP20N14CL motorola transistor ignition
Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N14CL 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N14CL/D
MGP20N14CL
NT 407 F TRANSISTOR TO 220
108 motorola transistor
NT 407 F MOSFET TRANSISTOR
NT 407 F TRANSISTOR
motorola mosfet
632 transistor motorola
221A-09
MOTOROLA TRANSISTOR
MGP20N14CL
motorola transistor ignition
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F TRANSISTOR NT 407 F MOSFET TRANSISTOR NT 407 F power transistor MGP20N14CL
Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N14CL/D
MGP20N14CL
NT 407 F TRANSISTOR TO 220
NT 407 F TRANSISTOR
NT 407 F MOSFET TRANSISTOR
NT 407 F power transistor
MGP20N14CL
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR MGP20N35CL
Text: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N35CL/D
MGP20N35CL
NT 407 F TRANSISTOR TO 220
NT 407 F MOSFET TRANSISTOR
NT 407 F TRANSISTOR
MGP20N35CL
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MGP20N35CL
Abstract: mosfet, igbt, transistor NT 407 F TRANSISTOR TO 220
Text: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N35CL/D
MGP20N35CL
MGP20N35CL/D*
MGP20N35CL
mosfet, igbt, transistor
NT 407 F TRANSISTOR TO 220
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F MOSFET TRANSISTOR motorola mosfet 108 motorola transistor motorola sps transistor motorola transistor ignition MGP20N14CL mosfet transistor NT 407 F transistor MOTOROLA TRANSISTOR 279
Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N14CL/D
MGP20N14CL
NT 407 F TRANSISTOR TO 220
NT 407 F MOSFET TRANSISTOR
motorola mosfet
108 motorola transistor
motorola sps transistor
motorola transistor ignition
MGP20N14CL
mosfet transistor
NT 407 F transistor
MOTOROLA TRANSISTOR 279
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200 amp 120 V igbt
Abstract: MHPM6B20A60D
Text: MOTOROLA Order this document by MHPM6B20A60D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B20A60D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT
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MHPM6B20A60D/D
MHPM6B20A60D
MHPM6B20A60D/D*
200 amp 120 V igbt
MHPM6B20A60D
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motorola e6 SCHEMATIC
Abstract: MHPM6B15A120D
Text: MOTOROLA Order this document by MHPM6B15A120D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B15A120D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT
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MHPM6B15A120D/D
MHPM6B15A120D
2500re
MHPM6B15A120D/D*
motorola e6 SCHEMATIC
MHPM6B15A120D
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MHPM6B10A120D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHPM6B10A120D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B10A120D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT
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MHPM6B10A120D/D
MHPM6B10A120D
2500re
MHPM6B10A120D/D*
MHPM6B10A120D
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MHPM6B10A60D1
Abstract: MHPM6B10A60D Dimensioning Inverter
Text: MOTOROLA Order this document by MHPM6B10A60D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B10A60D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT
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MHPM6B10A60D/D
MHPM6B10A60D
MHPM6B10A60D/D*
MHPM6B10A60D1
MHPM6B10A60D
Dimensioning Inverter
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ESD 141
Abstract: MGP20N63CL
Text: MOTOROLA Order this document by MGP20N63CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N63CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–
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MGP20N63CL
220AB
ESD 141
MGP20N63CL
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motorola transistor ignition
Abstract: MGP15N40CL
Text: MOTOROLA Order this document by MGP15N40CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N40CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–
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MGP15N40CL/D
MGP15N40CL
motorola transistor ignition
MGP15N40CL
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MGP15N38CL
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP15N38CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N38CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–
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MGP15N38CL/D
MGP15N38CL
220AB
MGP15N38CL
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47-6 k5 diode
Abstract: Motorola 022 6934 MHPM7B30A60B rectifier bridge 300v 30a
Text: MAXIMUM, DEVICE RATINGS continued (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit IGBT Reverse Voltage VCES 600 v Gate-Emitter Voltage. VGES +20 v [c 30 A BRAKE CIRCUIT - \ , : - - Continuous IGBT Collector Current Peak IGBT Collector Current (PW = 1.0 ms) (2)
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MHPM7B30A60B
140WI
1PHX36017+
MHPM7B30A60BID
47-6 k5 diode
Motorola 022 6934
MHPM7B30A60B
rectifier bridge 300v 30a
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MHPM2A400A60M
Abstract: motorola hybrid module A60M MOTOROLA Power Factor MOTOROLA Hybrid Power Module
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MHPM2A400A60WD DATA . MHPM2A4~A60M Preliminary Data %eet Hybrid Power Module IGBT Module High Current . 400 Amp, 600 Volt IGBT Half-Btidge ● Low On–Voltage, ● Excellent Shoti Circuit Capability
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MHPM2A400A60WD
2PHXM66H
M2-26629298
MHPM2A400A60M
motorola hybrid module
A60M
MOTOROLA Power Factor
MOTOROLA Hybrid Power Module
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N35CL
-220A
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GP20N
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Cltannel IGBT MGP20N40CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) T his Logic Level Insulated G ate Bipolar Transistor (IGBT)
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MGP20N40CL
21A-09
O-220AB
GP20N
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GP20N40CL
Abstract: transistor tl 430 c
Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information M GP20N40CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N40CL/D
GP20N40CL
21A-09
GP20N40CL
transistor tl 430 c
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33153/D ^ MOTOROLA -M C33153 Advance Information Single IGBT G ate Driver The MC33153 is specifcally designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor
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MC33153/D
C33153
MC33153
1PHX36013-0
DCH3751
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate-Emitter ESD protection, Gate-Collector overvoltage
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OCR Scan
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MGP20N35CL/D
MGP20N35CL
21A-06
O-220AB)
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate-Emitter ESD protection, Gate-Collector overvoltage
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OCR Scan
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MGP20N40CL/D
MGP20N40CL
O-220AB)
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