CM600HG-130H
Abstract: HCM-1002-H high voltage igbt
Text: SECURITY CODE A Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura F S.Iura G S.Iura R H.Yamaguchi I.Umezaki I.Umezaki E M.Yamamoto H.Yamaguchi H.Yamaguchi V 7-Oct.-2002 18-May-2004 20-May-2004
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18-May-2004
20-May-2004
CM600HG-130H
HCM-1002-H
10-Dec
22-Jan
26-Jan
17-May-2004
CM600HG-130H
HCM-1002-H
high voltage igbt
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schematic diagram inverter air conditioner
Abstract: schematic diagram for inverter air conditioner injection molding machine wire diagram schematic diagram washing machines PS21246-E air conditioner schematic diagram schematic diagram Refrigerators coin washing machine application of microprocessor in washing machine fab15
Text: IEEE INDUSTRY APPLICATIONS MAGAZINE • JULY|AUG. 2002 • WWW.IEEE.ORG/IAS HYBRID POWER MODULES utilize a unique INJECTION-MOLDED LEAD-FRAME DESIGN and provide cost-effective integration of power devices, gate drive, and protection. 26 HE USE OF INVERTERS IN APPLI-
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T0360NA25A
Abstract: D-68623 T0360 TX031NA25A
Text: WESTCODE Date:- 28 Aug, 2002 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Bi-Polar Gate Transistor Type T0360NA25A Development Type Number: TX031NA25A Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage
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T0360NA25A
TX031NA25A)
T0360NA25A
D-68623
T0360
TX031NA25A
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IC 0001 SPMS
Abstract: curve tracer equipment heat sink design guide, IGBT calculation of IGBT snubber Power PCB Relays FPAL20SM60-IGBT INVERTER 10kW mosfet 5kw high power rf spms 12 volt 1N4937
Text: Application Note 9018 May, 2002 Smart Power Module User’s Guide 8.Bootstrap Circuit 8.1 Operation of a Bootstrap Circuit The VBS voltage, which is the voltage difference between VB SPM pins 20, 25 and 29 and VS (SPM pins 21, 26 and 30), provides the supply to the HVICs within the SPM. This supply must
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4kw inverter diagram
Abstract: IGBT power loss inverter Controller PWM 3kw FSAM15SH60 curve tracer equipment obsolete ic cross reference 3kw inverter CSP15 IGBT JUNCTION TEMPERATURE CALCULATION 3 phase inverter 120 conduction mode waveform
Text: Application Note 9021 May, 2002 A Novel IGBT Inverter Module for Low-Power Drive Applications By M.K Kim, K.Y Jang, B.H Choo, J.B Lee, B.S Suh, T.H Kim Abstract - This paper presents a novel 3-phase IGBT module called the SPM Smart Power Module . This is a new design developed to provide a very compact, low cost, high performance and reliable motor drive system. Several distinct design concepts were used to achieve
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full bridge igbt induction heating generator
Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
Text: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets
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M7 diode vishay
Abstract: No abstract text available
Text: 100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Compliant to RoHS Directive 2002/95/EC • Very low stray inductance design for high speed operation
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100MT060WDF
2002/95/EC
11-Mar-11
M7 diode vishay
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X4612
Abstract: No abstract text available
Text: 100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Compliant to RoHS Directive 2002/95/EC • Very low stray inductance design for high speed operation
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100MT060WDF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
X4612
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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circuit diagram of 5kw smps full bridge
Abstract: TJM 10 earth fault relay SCK 054 VARISTOR TMS320F2406 SCHEMATIC 10kw POWER SUPPLY WITH IGBTS SCHEMATIC 5kw power supply 30A thermistor SCK 054 5kw inverter schematic TJM 11 earth fault relay 5kw smps full bridge S.M.P.S
Text: Application Note 9018 May, 2002 Smart Power Module User’s Guide CONTENTS 1. Introduction .3 2. SPM-Inverter System Overview .4
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TRANSISTOR 1pz
Abstract: igbt die 1200V trench npt The field stop IGBT FS IGBT 50-DEGREE CSTBT igbt igbt testing procedure
Text: Characterization and Modeling of the LPT CSTBT the 5th Generation IGBT X. Kang, L. Lu, X. Wang, E. Santi, J.L. Hudgins, P.R. Palmer*, J.F. Donlon* Department of Electrical Engineering University of South Carolina Columbia, SC 29208, USA santi@engr.sc.edu
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UC3842 smps design with TL431
Abstract: MC34063 Boost MOSFET mc34063 step down with mosfet computer schematic power supply circuit diagram circuit diagram of mosfet based smps power supply smps with uc3842 and tl431 mc34063 step up with mosfet g6351 atx power supply UC3842 diagram schematic diagram dc-dc flyback converter
Text: SWITCHMODEt Power Supplies Reference Manual and Design Guide SMPSRM/D Rev. 3A, July−2002 SCILLC, 2006 Previous Edition © 2002 “All Rights Reserved’’ SMPSRM ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice
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July-2002
UC3842 smps design with TL431
MC34063 Boost MOSFET
mc34063 step down with mosfet
computer schematic power supply circuit diagram
circuit diagram of mosfet based smps power supply
smps with uc3842 and tl431
mc34063 step up with mosfet
g6351
atx power supply UC3842 diagram
schematic diagram dc-dc flyback converter
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2PG009
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
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2002/95/EC)
2PG009
O-220D-A1
2PG009
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IGBT MOTOR CONTROL
Abstract: IGBT K 40 T 2002 MJ75
Text: MKI 75-06 A7 IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Preliminary Data B3 Features IGBTs ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings ● ● 600 V ± 20 V 90 60 A A ICM = 120
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MWI7506A7
IGBT MOTOR CONTROL
IGBT K 40 T 2002
MJ75
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2PG006
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High-speed switching: tf = 175 ns (typ.)
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2PG006
O-220D-A1
2PG006
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2PG011
Abstract: IGBT 2pg011 SJN00008AED
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
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2PG011
O-220D-A1
2PG011
IGBT 2pg011
SJN00008AED
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single phase bridge rectifier IC
Abstract: No abstract text available
Text: MUBW 10-12 A7 Converter - Brake - Inverter Module CBI2 21 D11 D13 22 7 1 2 3 D12 D14 D16 T1 D7 D15 D1 16 15 6 T2 T7 14 23 11 10 T3 18 17 T4 D2 D3 T5 D5 20 19 5 D4 12 4 T6 D6 13 24 8 B4 NTC 9 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V
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mot25
MUBW1012A7
single phase bridge rectifier IC
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1006 diode
Abstract: b4-10 diode
Text: MUBW 10-06 A7 Converter - Brake - Inverter Module CBI2 21 D11 D13 22 7 1 2 3 D12 D14 D16 T1 D7 D15 D1 16 15 6 T2 T7 14 23 11 10 T3 18 17 T4 D2 D3 T5 D5 20 19 5 D4 12 4 T6 D6 13 24 8 B4 NTC 9 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V
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MUBW1006A7
1006 diode
b4-10 diode
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H bridge 300v 30a
Abstract: MKI 50-06 A7
Text: MKI 50-06 A7 IC25 = 72 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA 13 T5 T1 Preliminary Data D1 D5 9 1 10 2 16 T2 14 T6 D2 D6 11 3 12 4 17 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C
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MWI5006A7
H bridge 300v 30a
MKI 50-06 A7
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MUBW10-06A7
Abstract: C150 D-68623 10-06A7 1766 RECTIFIER
Text: MUBW 10-06 A7 Converter - Brake - Inverter Module CBI2 21 D11 D13 22 7 1 2 3 D12 D14 D16 T1 D7 D15 D1 16 15 6 T2 T7 14 23 11 10 T3 18 17 T4 D2 T5 D3 D5 20 19 5 T6 D4 12 4 D6 13 24 8 B4 NTC 9 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V
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MUBW1006A7
MUBW10-06A7
C150
D-68623
10-06A7
1766 RECTIFIER
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d1191
Abstract: 400-12E4 ic equivalent MID 400 MII400-12E4 ZY180L 0002K MJ50150
Text: MII 400-12E4 IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Module phaseleg and chopper topolgies with optional temperature sensor MII 400-12E4 MID 400-12E4 MID 400-12E4T 3 T1 11 D2 2 10 1 T2 T2 11 3 T1 D1 1 9 MDI 400-12E4 3 D1 8 MID 400-12E4(T) MDI 400-12E4
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400-12E4
400-12E4T
400-12E4
MII400-12E4
d1191
ic equivalent MID 400
MII400-12E4
ZY180L
0002K
MJ50150
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GB15XP120KTPBF
Abstract: diodes jc 817 gb15xp120kt
Text: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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GB15XP120KTPbF
E78996
2002/95/EC
18-Jul-08
GB15XP120KTPBF
diodes
jc 817
gb15xp120kt
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GB05XP120KTPBF
Abstract: No abstract text available
Text: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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GB05XP120KTPbF
E78996
2002/95/EC
18-Jul-08
GB05XP120KTPBF
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PCIM 96
Abstract: mitsubishi igbt cm
Text: New 1.7kV IGBT Chip with Fine Pattern and Optimized Buffer Layer John F. Donlon, Eric R. Motto K. Satoh, K. Suzuki, Y. Yoshihiura, T. Takahashi Powerex, Inc. 173 Pavilion Lane Youngwood, PA 15697 USA Mitsubishi Electric Corporation 1-1-1Imajukuhigashi Nishi-ku
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