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    IGBT H BRIDGE APPLICATION Search Results

    IGBT H BRIDGE APPLICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT H BRIDGE APPLICATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    "IGBT h-bridge"

    Abstract: h-bridge ic amp h-bridge gate drive ic QIB0607002 RG83 igbt h bridge application what is fast IGBT transistor 7272 300 amp igbt ups
    Text: Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 724 925-7272 QIB0607002 H-BRIDGE 75 Amp/600 Volts Description: Powerex IGBT H-Bridge Module is designed especially for customer applications. Each module consists of four IGBT Transistors in an


    Original     		QIB0607002 Amp/600 100ns) "IGBT h-bridge" h-bridge ic amp h-bridge gate drive ic QIB0607002 RG83 igbt h bridge application what is fast IGBT transistor 7272 300 amp igbt ups PDF

    IGBT 50 amp 1000 volt

    Abstract: CQ-111 100 Amp current 1300 volt diode 12 VOLT 100 AMP smps IGBT 250 amp smps 12 volt OM9038SF OM9039SF 12 VOLT 150 AMP smps 150 VOLT 10 AMP smps
    Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design


    Original     		OM9038SF OM9039SF 12-Pin IGBT 50 amp 1000 volt CQ-111 100 Amp current 1300 volt diode 12 VOLT 100 AMP smps IGBT 250 amp smps 12 volt OM9038SF OM9039SF 12 VOLT 150 AMP smps 150 VOLT 10 AMP smps PDF

    OM9038SF

    Abstract: OM9039SF 12 VOLT 100 AMP smps diode v3e
    Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design


    OCR Scan     		12-Pin OM9038SF 0M9Q39SF OM9039SF 12 VOLT 100 AMP smps diode v3e PDF

    tyco igbt module 25A

    Abstract: P385A P385A-11-pm tyco igbt module 20 a IEC-147 p385a11
    Text: fast switching H bridge module fastPIM 1 H Features: - 1 Phase Input Rectifier Bridge - 1 Phase fast switching IGBT + FRED full H bridge - NTC V23990-P38X-A_ fastPIM 1 H module types / Produkttypen Part-Number V23990- Voltage Current P380-A-PM P381-A-PM P382-A-PM


    Original     		V23990-P38X-A_ V23990- P380-A-PM P381-A-PM P382-A-PM P385-A11-PM P386-A11-PM P387-A11-PM D-81359 tyco igbt module 25A P385A P385A-11-pm tyco igbt module 20 a IEC-147 p385a11 PDF

    F4-35R12NS4

    Abstract: No abstract text available
    Text: Technische Information / technical information F4-35R12NS4 IGBT-Module IGBT-modules EconoPACK 1 mit schnellem IGBT2 für hochfrequentes Schalten als H-Brückenkonfiguration EconoPACK™1 module with fast IGBT2 for high switching frequency as H-bridge configuration


    Original     		F4-35R12NS4 F4-35R12NS4 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM300DU-12H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured * Description: H H H it Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration


    OCR Scan     		CM300DU-12H PDF

    CGBT

    Abstract: diode c446
    Text: Provisional Data Sheet PD-9.1156 H Rectifier IRGTIN075M06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses • Short circuit rated Description IR's advanced IGBT technology is the key


    OCR Scan     		IRGTIN075M06 Outline11 C-446 CGBT diode c446 PDF

    h-bridge igbt pwm schematics circuit

    Abstract: h-bridge pwm schematics circuit 600v h-bridge gate drive schematics circuit half bridge inverter schematic igbt inverter reference schematics POW-R-PAK pwm ac chopper control igbt h-bridge gate drive IGBT 10KHz three phase h-bridge gate drive ic
    Text: TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 PP75B120 POW-R-PAK 75A / 1200V TM H-Bridge IGBT Assembly Description: TM The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase


    Original     		PP75B120 10kHz PP75B120 h-bridge igbt pwm schematics circuit h-bridge pwm schematics circuit 600v h-bridge gate drive schematics circuit half bridge inverter schematic igbt inverter reference schematics POW-R-PAK pwm ac chopper control igbt h-bridge gate drive IGBT 10KHz three phase h-bridge gate drive ic PDF

    600v h-bridge gate drive schematics circuit

    Abstract: h-bridge igbt pwm schematics circuit 3 phase inverter schematic h-bridge pwm schematics circuit PP75B060 Power INVERTER schematic circuit pwm ac chopper control igbt gate drive board for three phase inverter IGBT 10KHz pwm INVERTER 6 phase ac
    Text: TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 PP75B060 POW-R-PAK 75A / 600V TM H-Bridge IGBT Assembly Description: TM The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase


    Original     		PP75B060 10kHz PP75B060 600v h-bridge gate drive schematics circuit h-bridge igbt pwm schematics circuit 3 phase inverter schematic h-bridge pwm schematics circuit Power INVERTER schematic circuit pwm ac chopper control igbt gate drive board for three phase inverter IGBT 10KHz pwm INVERTER 6 phase ac PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE J H H H M IH É Ü É M á iK •PPi* Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge con­


    OCR Scan     		CM30TF-12H PDF

    half bridge 600V MOSFET driver IC

    Abstract: 16P2N M81702FP half bridge MOSFET driver IC
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81702FP RY INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T tric e: Notice parame Som PR HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81702FP is high voltage Power MOSFET and IGBT module driver for half bridge applications.


    Original     		M81702FP M81702FP OP-16 half bridge 600V MOSFET driver IC 16P2N half bridge MOSFET driver IC PDF

    16P2N

    Abstract: M81703FP half bridge 600V MOSFET driver IC
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81703FP RY INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T tric e: Notice parame Som PR HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81703FP is high voltage Power MOSFET and IGBT module driver for half bridge applications.


    Original     		M81703FP M81703FP OP-16 16P2N half bridge 600V MOSFET driver IC PDF

    l g washing machine circuit diagram

    Abstract: 16P2N M81700FP half bridge 600V MOSFET driver IC HO89 half bridge MOSFET driver IC half bridge driver
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81700FP RY INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T tric e: Notice parame Som PR HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81700FP is high voltage Power MOSFET and IGBT module driver for half bridge applications.


    Original     		M81700FP M81700FP OP-16 l g washing machine circuit diagram 16P2N half bridge 600V MOSFET driver IC HO89 half bridge MOSFET driver IC half bridge driver PDF

    half bridge 600V MOSFET driver IC

    Abstract: igbt pdp pulse module ic BJE 42
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81719FP RY INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81719FP is high voltage Power MOSFET and IGBT module driver for half bridge applications.


    Original     		M81719FP M81719FP 120mA/ 250mA half bridge 600V MOSFET driver IC igbt pdp pulse module ic BJE 42 PDF

    958b

    Abstract: AS36 IFR 740 IRGTI120F06
    Text: International ü r ]Rectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V • Rugged Design • Sim ple gate-drive • Fast operation up to 10 K H z hard switching, or 5 0K H z resonant • Switching-Loss Rating includes all "tail"


    OCR Scan     		IRGTI120F06 10KHz 50KHz C-224 0DEDD14 958b AS36 IFR 740 IRGTI120F06 PDF

    Untitled

    Abstract: No abstract text available
    Text: MKI 80-06T6K IGBT Modules H-Bridge IC25 = 89 A VCES = 600 V VCE sat typ. = 1.8 V Trench IGBT Preliminary data Part name (Marking on product) MKI 80-06T6K 10/17/18/23 15 21 16 22 8 11/12 E72873 19/20 7 5 1 6 2 3/4/9/24 Features: Application: Package: • Trench IGBT technology


    Original     		80-06T6K E72873 20111110b 80-06T6K MKI80-06T6K PDF

    ic laf 0001

    Abstract: LAF 0001 laf 0001 power IR LFN IRGTI200F06 200A 600V FET 2S0240 50PCL
    Text: International n Rectifier PD-9.968B IRGTI200F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V .R ugged Design .Sim ple gate-drive .F as t operation up to 10KHz hard switching, or 50K H z resonant .Switching-Loss Rating includes all "tail" losses


    OCR Scan     		IRGTI200F06 10KHz 50KHz applicationI200F06 100nH C-236 ic laf 0001 LAF 0001 laf 0001 power IR LFN IRGTI200F06 200A 600V FET 2S0240 50PCL PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of four IGBTs in an H-Bridge configura­ tion, with each transistor having a


    OCR Scan     		CM75BU-12H -150A/ PDF

    Igbt 1200v 300a

    Abstract: IGBT based voltage source converter h-bridge igbt pwm schematics circuit IGBT 250 amp h-bridge igbt pwm half bridge inverter schematic IGBT 50 amp 1000 volt pc 890 600v h-bridge gate drive schematics circuit pwm ac chopper control igbt
    Text: TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 PP300B120 TM POW-R-PAK 300A / 1200V H-Bridge IGBT Assembly Description: TM The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a


    Original     		PP300B120 10kHz PP300B120 Igbt 1200v 300a IGBT based voltage source converter h-bridge igbt pwm schematics circuit IGBT 250 amp h-bridge igbt pwm half bridge inverter schematic IGBT 50 amp 1000 volt pc 890 600v h-bridge gate drive schematics circuit pwm ac chopper control igbt PDF

    pwm inverter IGBT 100a

    Abstract: h-bridge igbt pwm schematics circuit igbt 100a &24v dc motor control 100A 600v h-bridge gate drive schematics circuit three phase h-bridge gate drive ic IGBT 10KHz half bridge inverter schematic IGBT full bridge schematics overcurrent inverter protection
    Text: TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 PP100B120 TM POW-R-PAK 100A / 1200V H-Bridge IGBT Assembly Description: TM The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a


    Original     		PP100B120 PP100B120 pwm inverter IGBT 100a h-bridge igbt pwm schematics circuit igbt 100a &24v dc motor control 100A 600v h-bridge gate drive schematics circuit three phase h-bridge gate drive ic IGBT 10KHz half bridge inverter schematic IGBT full bridge schematics overcurrent inverter protection PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of four IGBTs in an H-Bridge configura­ tion, with each transistor having a


    OCR Scan     		CM100BU-12H PDF

    C1017

    Abstract: No abstract text available
    Text: Provisional Data Sheet PD-9.1200 International [^Rectifier IRGTDN150K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 150A • Rugged Design •S im ple gate-drive •S w itching-Loss Rating includes all "tail" losses •S h ort circuit rated


    OCR Scan     		IRGTDN150K06 C-1018 5S452 C1017 PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR MOD1004 TECHNICAL DATA DATA SHEET 1125, REV. 12 1 2 3 4 5 11 10 9 8 7 6 600 VOLT, 40 AMP IGBT H-BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER Tj=250C UNLESS OTHERWISE SPECIFIED SYMBOL MIN TYP MAX UNIT 600 - - V - - 40


    Original     		MOD1004 /-20V PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG30V2YS40 TO SH IBA GTR M O DU LE SILICON N CHANNEL IGBT MG30V2YS40 HIGH PO W E R SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS The Electrodes are Isolated from Case. H igh Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode


    OCR Scan     		MG30V2YS40 PDF