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    IGBT DISPLAY PLASMA Search Results

    IGBT DISPLAY PLASMA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT DISPLAY PLASMA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2pg001

    Abstract: 2PG001+equivalent
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V


    Original     		PDF 2002/95/EC) 2PG001 O-220F-A1 2PG001 2PG001+equivalent

    2PG003

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V


    Original     		PDF 2002/95/EC) 2PG003 O-220F-A1 2PG003

    2PG002

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V


    Original     		PDF 2002/95/EC) 2PG002 O-220F-A1 2PG002

    IXGA9289

    Abstract: igbt display plasma TO-3P weight IXGA120N30TC ixga120n30
    Text: Advanced Technical Information Trench IGBT IXGA9289 = 300 V VCES IC25 = 120 A VCE sat (typ) = 1.4 V For Plasma Display Applications (Development type IXGA_120N30TC) TO-263 (IXGA) Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM IC25 TC = 25°C, IGBT chip capability


    Original     		PDF IXGA9289 120N30TC) O-263 405B2 IXGA9289 igbt display plasma TO-3P weight IXGA120N30TC ixga120n30

    2pg001

    Abstract: 2pg001 datasheet 2PG001 IGBT 2PG001 equivalent
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High speed hall time: tf = 250 nsec(typ.)


    Original     		PDF 2002/95/EC) 2PG001 O-220F-A1 2pg001 2pg001 datasheet 2PG001 IGBT 2PG001 equivalent

    2PG009

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		PDF 2002/95/EC) 2PG009 O-220D-A1 2PG009

    2PG009

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		PDF 2002/95/EC) 2PG009 O-220D-A1 2PG009

    2pg002

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High speed hall time: tf = 190 nsec(typ.)


    Original     		PDF 2002/95/EC) 2PG002 O-220F-A1 2pg002

    IGBT 2pg011

    Abstract: 2PG011
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		PDF 2002/95/EC) 2PG011 O-220D-A1 IGBT 2pg011 2PG011

    2pg003

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High speed hall time: tf = 200 nsec(typ.)


    Original     		PDF 2002/95/EC) 2PG003 O-220F-A1 2pg003

    2PG011

    Abstract: IGBT 2pg011 2pg0 2 SJN00008AED 2pg011pcta
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		PDF 2002/95/EC) 2PG011 O-220D-A1 2PG011 IGBT 2pg011 2pg0 2 SJN00008AED 2pg011pcta

    2PG006

    Abstract: SJN00006AED
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.)


    Original     		PDF 2002/95/EC) 2PG006 O-220D-A1 2PG006 SJN00006AED

    2PG006

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.)


    Original     		PDF 2002/95/EC) 2PG006 O-220D-A1 2PG006

    2PG011

    Abstract: IGBT 2pg011 SJN00008AED
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		PDF 2002/95/EC) 2PG011 O-220D-A1 2PG011 IGBT 2pg011 SJN00008AED

    2pg001

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1


    Original     		PDF 2002/95/EC) 2PG001 O-220F-A1 2pg001

    2pg003

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1


    Original     		PDF 2002/95/EC) 2PG003 O-220F-A1 2pg003

    2PG006

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2PG006 O-220D-A1 2PG006

    2PG002

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1


    Original     		PDF 2002/95/EC) 2PG002 O-220F-A1 2PG002

    IXGQ90N33

    Abstract: 90n33 IXGQ90N33TCD IXGQ90N33TCD4 90N33T g90n33tc 90N33TC IXgq90n IXGQ90 TO-3P package
    Text: Preliminary Technical Information Plasma Display Power IGBT IXGQ90N33TCD4 Trench Gate High Speed Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V ±30 V 90 A IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s 360 A IDP TJ ≤ 150°C, tp ≤ 1μs


    Original     		PDF IXGQ90N33TCD4 90N33TC 5-30-07-C IXGQ90N33 90n33 IXGQ90N33TCD IXGQ90N33TCD4 90N33T g90n33tc IXgq90n IXGQ90 TO-3P package

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM IGBT DIE IXGD160N30PC-66 VCES = 300 V For Plasma Display Applications Die Outline Notes: 1. Wafer Diameter: 150 mm 2. Width of all Scribe Streets: 100 µm 3. Die Thickness: 200 ± 20 µm 4. Die Size Tolerance: ± 50 µm


    Original     		PDF IXGD160N30PC-66 22-A114-B A0011.

    Untitled

    Abstract: No abstract text available
    Text: TLP155 Photocouplers GaAℓAs Infrared LED & Photo IC TLP155 1. Applications • Plasma Display Panels PDPs • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers 2. General The Toshiba TLP155 consists of a GaAℓAs infrared light-emitting diodes and integrated high gain, high-speed


    Original     		PDF TLP155 TLP155

    Untitled

    Abstract: No abstract text available
    Text: TLP155 Photocouplers GaA As Infrared LED & Photo IC TLP155 1. Applications • Plasma Display Panels PDPs • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers 2. General The Toshiba TLP155 consists of a GaA As infrared light-emitting diodes and integrated high gain, high-speed


    Original     		PDF TLP155 TLP155

    Power MOS FET Gate Drive

    Abstract: inverter plasma
    Text: TLP705F TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP705F Plasma Display Panel Industrial Inverter IGBT/Power MOS FET Gate Drive Unit in mm 4.58±0.25 1.27±0.2 Peak output current : ±0.45 A max • Operating frequency : 250kHz (max) • Guaranteed performance over temperature : −40 to 100°C


    Original     		PDF TLP705F TLP705F TLP705 UL1577, E67349 11-5J101 Power MOS FET Gate Drive inverter plasma

    TLP705F

    Abstract: E67349 EN60747-5-2 TLP705 igbt display plasma
    Text: TLP705F TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP705F Plasma Display Panel Industrial Inverter IGBT/Power MOSFET Gate Drive Unit in mm 4.58±0.25 1.27±0.2 Peak output current : ±0.45 A max • Operating frequency : 250kHz (max) • Guaranteed performance over temperature : −40 to 100°C


    Original     		PDF TLP705F 250kHz TLP705F E67349 EN60747-5-2 TLP705 igbt display plasma