Untitled
Abstract: No abstract text available
Text: APT120GR120D APT120GR120D 1200V, 120A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT Die The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and
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APT120GR120D
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5SMY 86M1730
Abstract: ac130
Text: Data Sheet, Doc. No. 5SYA 1695-03 04 14 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage
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12M1730
CH-5600
5SMY 86M1730
ac130
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for IR IGBT die
Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
Text: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient
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7135A
IRG7CH30K10B
IRG7CH30K10B
150mm
O-247
AN-1086
for IR IGBT die
IRG7PH30K10
IRG7CH
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Untitled
Abstract: No abstract text available
Text: SIGC25T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology positive temperature coefficient easy paralleling This chip is used for: power module BUP 213 C Applications: drives G Chip Type VCE IC Die Size Package SIGC25T120C
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SIGC25T120C
50ypes
L7141MM,
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Untitled
Abstract: No abstract text available
Text: SIGC25T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology positive temperature coefficient easy paralleling This chip is used for: power module BUP 213 C Applications: drives G Chip Type VCE IC Die Size Package SIGC25T120C
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SIGC25T120C
L7141MM,
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BUP213
Abstract: SIGC25T120C
Text: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size
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SIGC25T120C
C67078-A4674A001
7141-M,
BUP213
SIGC25T120C
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bup213
Abstract: BUP21
Text: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size
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SIGC25T120C
C67078-A4674A001
14ypes
7141-M,
bup213
BUP21
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Untitled
Abstract: No abstract text available
Text: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size
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SIGC25T120C
C67078-A4674A001
7141-M,
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L7151
Abstract: No abstract text available
Text: SIGC42T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology low turn-off losses positive temperature coefficient easy paralleling This chip is used for: power module BUP 314 C Applications: drives G Chip Type VCE IC Die Size
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SIGC42T120C
L7151MM,
L7151
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Untitled
Abstract: No abstract text available
Text: SIGC42T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology low turn-off losses positive temperature coefficient easy paralleling This chip is used for: power module BUP 314 C Applications: drives G Chip Type VCE IC Die Size
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SIGC42T120C
L7151MM,
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IRGC100B120UB
Abstract: 1kA IGBT
Text: PD - 93873 IRGC100B120UB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC100B120UB
150mm
IRGC100B120UB
1kA IGBT
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POWER MODUL SEMIKRON
Abstract: infineon igbt3 1200v 1200-V-Versionen 1200V-IGBT 400GD MiniSKiiP 1 Package semikron IGBT skiip Semikron Semitop 3 footprint semikron skim 1200VIGBT
Text: low profile – high power – less parts to deal with SKiM - ein neuer Industriestandard für IGBT-Module in SKiiP-Technologie Autor: Rickmer Heubeck, SEMIKRON International Abstract Für die Aufbau- und Verbindungstechnik von Leistungshalbleiter-Modulen werden hohe
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IRGC25B120KB
Abstract: 1kA IGBT
Text: PD - 93868 IRGC25B120KB Die in Wafer Form Features • • • • • 1200V IC nom =25A VCE(on) typ.=2.28V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC25B120KB
150mm
Thresh57]
IRGC25B120KB
1kA IGBT
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IRGC100B120KB
Abstract: 4kA IGBT
Text: PD - 93874 IRGC100B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 2.2V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC100B120KB
150mm
IRGC100B120KB
4kA IGBT
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SK 5207
Abstract: No abstract text available
Text: PD - 94562 IRGC16B120KB Die in Wafer Form Features 1200V IC nom =15A VCE(on) typ.=2.55V@ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC16B120KB
150mm
GB15RF120K
SK 5207
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IRGC75B120KB
Abstract: 0443 IC HA-1370S
Text: PD - 93872 IRGC75B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 75A VCE(on) typ.= 2.1 V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC75B120KB
150mm
IRGC75B120KB
0443 IC
HA-1370S
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IRGC50B120KB
Abstract: No abstract text available
Text: PD - 93870 IRGC50B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 50A VCE(on) typ.=2.15V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC50B120KB
150mm
IRGC50B120KB
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NGT 05
Abstract: 300c motor 300C IRGC5B120KB
Text: PD - 94314 IRGC5B120KB IRGC5B120KB IGBT Die in Wafer Form Features • GEN5 Non Punch Through NPT Technology • Low VCE(on) • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient Benefits • Benchmark Efficiency for Motor Control
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IRGC5B120KB
IRGC5B120KB
150mm
NGT 05
300c motor
300C
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300C
Abstract: IRGC8B120UB
Text: PD -94317 IRGC8B120UB IRGC8B120UB IGBT Die in Wafer Form Features • • • • • GEN5 Non Punch Through NPT Technology UltraFast 10µs Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient 1200 V IC(nom) = 8A VCE(on) typ. = 3.63V @
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IRGC8B120UB
IRGC8B120UB
150mm
20KHz
Satur300C
300C
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2 SK 0243
Abstract: No abstract text available
Text: PD-91799A International IQR Rectifier IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) (on) C ollector-to-Em itter Saturation Voltage 4.5V Max.
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IRG4CH40SB
PD-91799A
IRG4CH40SB
IRG4PH40S
2 SK 0243
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier PD-9,1422 IRGCH40KE TARGET IRGCH40KE IGBT Die in Wafer Form 1200 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.8V Max.
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P-942
IRGCH40KE
IRGCH40KE
250pA,
250pA
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Untitled
Abstract: No abstract text available
Text: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter
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IRGCH50FE
IRGCH50FE
250pA,
250pA
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Untitled
Abstract: No abstract text available
Text: PD-9.1419 International IQ R Rectifier IRGCH70KE TARGET IRGCH70KE IGBT Die in Wafer Form 1200 V Size 7 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE(on) Param eter Collector-to-Emitter Saturation Voltage
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IRGCH70KE
IRGCH70KE
250pA,
250pA
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Untitled
Abstract: No abstract text available
Text: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.
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IRGCH50KE
IRGCH50KE
250pA,
250pA
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