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GT30J110SRA
|
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Toshiba Electronic Devices & Storage Corporation
|
IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
|
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GT30N135SRA
|
|
Toshiba Electronic Devices & Storage Corporation
|
IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 |
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GT30J65MRB
|
|
Toshiba Electronic Devices & Storage Corporation
|
IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) |
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DF3D36FU
|
|
Toshiba Electronic Devices & Storage Corporation
|
TVS Diode (ESD Protection Diode), Bidirectional, +/-28 V, SOT-323 (USM), 2 protected lines, AEC-Q101 |
|
|
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DF3D29FU
|
|
Toshiba Electronic Devices & Storage Corporation
|
TVS Diode (ESD Protection Diode), Bidirectional, +/-24 V, SOT-323 (USM), 2 protected lines, AEC-Q101 |
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