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    IGBT CHIP 1700V Search Results

    IGBT CHIP 1700V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    IGBT CHIP 1700V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC185T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC185T170R2C 1700V 100A C This chip is used for: • IGBT-Module BSM100GB170DL


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    SIGC185T170R2C BSM100GB170DL Q67041-A4697A001 7371M, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC185T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC185T170R2C 1700V 100A C This chip is used for: • IGBT-Module BSM100GB170DL


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    SIGC185T170R2C BSM100GB170DL Q67041-A4697A001 7371M, PDF

    A001

    Abstract: SIGC104T170R2C
    Text: Preliminary SIGC104T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC104T170R2C 1700V This chip is used for: • chip only


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    SIGC104T170R2C Q67041-A4695sawn 7351M, A001 SIGC104T170R2C PDF

    transistors ai 757

    Abstract: SIGC144T170R2C 1136 GE
    Text: Preliminary SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only


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    SIGC144T170R2C Q67041-A4696A001 7361M, transistors ai 757 SIGC144T170R2C 1136 GE PDF

    A001

    Abstract: SIGC144T170R2C
    Text: Preliminary SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only


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    SIGC144T170R2C Q67041-A4696sawn 7361M, A001 SIGC144T170R2C PDF

    SIGC104T170R2C

    Abstract: No abstract text available
    Text: Preliminary SIGC104T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC104T170R2C 1700V This chip is used for: • chip only


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    SIGC104T170R2C Q67041-A4695A001 7351M, SIGC104T170R2C PDF

    SIGC42T170R2C

    Abstract: IC17A
    Text: Preliminary SIGC42T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE SIGC42T170R2C 1700V This chip is used for: • chip only


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    SIGC42T170R2C Q67050-A4117A003 7341M, SIGC42T170R2C IC17A PDF

    IC17A

    Abstract: A003 SIGC42T170R2C
    Text: Preliminary SIGC42T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE SIGC42T170R2C 1700V This chip is used for: • chip only


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    SIGC42T170R2C Q67050-A4117sawn 7341M, IC17A A003 SIGC42T170R2C PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC42T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE SIGC42T170R2C 1700V This chip is used for: • chip only G Applications:


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    SIGC42T170R2C Q67050-A4117A003 7341M, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC144T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology • 280 µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • chip only C Applications: • drives G Chip Type VCE


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    SIGC144T170R2C L7361M, PDF

    infineon igbt die 1200V

    Abstract: No abstract text available
    Text: SIGC104T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC104T170R2C 1700V This chip is used for: • chip only G Applications:


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    SIGC104T170R2C Q67041-A4695A001 7351M, infineon igbt die 1200V PDF

    transistors ai 757

    Abstract: AI 757 AI 757 datasheet transistor ai 757 SIGC144T170R2C 1136 GE
    Text: SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only G Applications:


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    SIGC144T170R2C Q67041-A4696A001 7361M, transistors ai 757 AI 757 AI 757 datasheet transistor ai 757 SIGC144T170R2C 1136 GE PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only G Applications:


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    SIGC144T170R2C Q67041-A4696A001 7361M, PDF

    SIGC42T170R2C

    Abstract: No abstract text available
    Text: SIGC42T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE SIGC42T170R2C 1700V This chip is used for: • chip only G Applications:


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    SIGC42T170R2C Q67050-A4117A003 7341M, SIGC42T170R2C PDF

    SIGC144T170R2C

    Abstract: No abstract text available
    Text: SIGC144T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology • 280 µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • chip only C Applications: • drives G Chip Type VCE


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    SIGC144T170R2C L7361M, SIGC144T170R2C PDF

    BSM100GB170DL

    Abstract: SIGC185T170R2C
    Text: Preliminary SIGC185T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC185T170R2C 1700V 100A C This chip is used for:


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    SIGC185T170R2C BSM100GB170DL Q67041-A4697A001 7371M, BSM100GB170DL SIGC185T170R2C PDF

    A001

    Abstract: BSM100GB170DL SIGC185T170R2C
    Text: Preliminary SIGC185T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC185T170R2C 1700V 100A C This chip is used for:


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    SIGC185T170R2C BSM100GB170DL Q67041-A4697sawn 7371M, A001 BSM100GB170DL SIGC185T170R2C PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC185T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology  280µm chip  short circuit prove  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type VCE SIGC185T170R2C 1700V


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    SIGC185T170R2C SIGC185T170R2C L7371M, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC185T170C IGBT Chip in NPT-technology Features: • 1700V NPT technology  280µm chip  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  chip only C Applications:  drives


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    SIGC185T170C L7081M, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC144T170C IGBT Chip in NPT-technology Features: • 1700V NPT technology  280µm chip  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  chip only C Applications:  drives


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    SIGC144T170C L7071M, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC144T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology  280µm chip  short circuit prove  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type VCE SIGC144T170R2C 1700V


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    SIGC144T170R2C SIGC144T170R2C L7361M, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC57T170C IGBT Chip in NPT-technology Features: • 1700V NPT technology  280µm chip  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  chip only C Applications:  drives


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    SIGC57T170C L7111M, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC104T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology  280µm chip  short circuit prove  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type VCE SIGC104T170R2C 1700V


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    SIGC104T170R2C SIGC104T170R2C L7351M, PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC68T170R3 3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC68T170R3 VCE ICn 1700V 50A This chip is used for:


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    SIGC68T170R3 Q67050sawn A4147-A001 761-A, PDF