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    IGBT 6500V Search Results

    IGBT 6500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 6500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R10 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R8 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles)

    IGBT 6500V

    Abstract: Hitachi DSA00281
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R7 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles) IGBT 6500V Hitachi DSA00281

    MBN750H65E2

    Abstract: IGBT 6500V 09008
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R6 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles) MBN750H65E2 IGBT 6500V 09008

    FZ600R65KF2

    Abstract: IGBT 6500V
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ600R65KF2 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 600A / ICRM = 1200A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FZ600R65KF2 BarcodeCode128 FZ600R65KF2 IGBT 6500V

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FZ750R65KE3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FZ750R65KE3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD250S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF DD250S65K3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD500S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF DD500S65K3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD500S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF DD500S65K3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD750S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF DD750S65K3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FZ250R65KE3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FZ250R65KE3

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FD250R65KE3-K hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FD250R65KE3-K

    FZ750R65KE3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ750R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ750R65KE3 Isolationseigenschaftenvon10 FZ750R65KE3

    DCR370T

    Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches


    Original     		PDF 4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ400R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 400A / ICRM = 800A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ400R65KE3 Isolationseigenschaftenvon10

    FZ600R65KE3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ600R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 600A / ICRM = 1200A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ600R65KE3 Isolationseigenschaftenvon10 FZ600R65KE3

    fz500r65ke3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ500R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ500R65KE3 Isolationseigenschaftenvon10 fz500r65ke3

    IRF 930

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD500S65K3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF DD500S65K3 Isolationseigenschaftenvon10 60yprovideapplicationnotes. IRF 930

    DD750S65K3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD750S65K3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF DD750S65K3 Isolationseigenschaftenvon10 60yprovideapplicationnotes. DD750S65K3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FD500R65KE3-K hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe • Traktionsumrichter


    Original     		PDF FD500R65KE3-K

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD250R65KE3-K hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FD250R65KE3-K Isolationseigenschaftenvon10

    DD250S

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD250S65K3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter


    Original     		PDF DD250S65K3 Isolationseigenschaftenvon10 600yprovideapplicationnotes. DD250S