Untitled
Abstract: No abstract text available
Text: APTGV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3
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APTGV50H60T3G
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APTGV50H60T3G
Abstract: APT0406 APT0502
Text: APTGV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Q3 11 • Solar converter
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APTGV50H60T3G
APTGV50H60T3G
APT0406
APT0502
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PDF
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Untitled
Abstract: No abstract text available
Text: APTGV50H60BG Trench & Field Stop IGBT Q1, Q3: VCES = 600V , IC = 50A @ Tc = 80°C Boost chopper CoolMos + full bridge NPT & Trench + Field Stop IGBT Power module K K CoolMOS™ Q5: VCES = 600V ; IC = 49A @ Tc = 25°C VBUS2 VBUS1 Q1 Q3 CR1 G1 CR5 Fast NPT IGBT Q2, Q4:
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APTGV50H60BG
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APT0406
Abstract: APT0502 solar converter
Text: APTCV60TLM70T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 29A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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APTCV60TLM70T3G
APT0406
APT0502
solar converter
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PDF
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Untitled
Abstract: No abstract text available
Text: SIGC42T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC42T60NC 600V This chip is used for: • IGBT-Modules G Applications: • drives ICn 50A
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SIGC42T60NC
Q67041-A4692A001
7272-M,
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Untitled
Abstract: No abstract text available
Text: SIGC42T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC42T60NC 600V This chip is used for: • IGBT-Modules G Applications: • drives ICn 50A
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SIGC42T60NC
Q67041-A4692A001
7272-M,
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1465F
Abstract: M4150 APT0406 APT0502 CR152
Text: APTCV40H60CT1G Full - Bridge CoolMOS & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V ; ID = 36A @ Tc = 25°C Application 3 4 • Solar converter Features Q3 Q1
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APTCV40H60CT1G
APTCV50H60CT1G
1465F
M4150
APT0406
APT0502
CR152
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PDF
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50N60C3
Abstract: No abstract text available
Text: Preliminary Technical Information IXXH50N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C
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IXXH50N60C3D1
IC110
O-247
IF110
50N60C3
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PDF
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Untitled
Abstract: No abstract text available
Text: APTCV40H60CT1G Full - Bridge CoolMOS & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V ; ID = 36A @ Tc = 25°C Application 3 4 • Solar converter Features Q3 Q1
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APTCV40H60CT1G
APTCV50H60CT1G
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Untitled
Abstract: No abstract text available
Text: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3
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APTGV30H60T3G
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APT0406
Abstract: APT0502 APTGV30H60T3G
Text: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Q3 11 • Solar converter
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APTGV30H60T3G
APT0406
APT0502
APTGV30H60T3G
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM MMIX1X200N60B3 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 120A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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MMIX1X200N60B3
IC110
110ns
10-30kHz
MMIX1X200N60B3
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PDF
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IXXH50N60B3D1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH50N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH50N60B3D1
135ns
O-247
IF110
50N60B3D1
IXXH50N60B3D1
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol Test Conditions VCES VCGR
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MMIX1X200N60B3H1
IC110
110ns
10-30kHz
IF110
MMIX1X200N60B3
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PDF
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MMIX1X200N60B3
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM MMIX1X200N60B3 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 120A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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Original
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10-30kHz
IC110
MMIX1X200N60B3
110ns
MMIX1X200N60B3
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR
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IXXN200N60B3H1
IC110
110ns
10-30kHz
OT-227B,
E153432
IF110
200N60B3
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PDF
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IXXH50N60B3D1
Abstract: 50N60B3D1 18A100
Text: Advance Technical Information IXXH50N60B3D1 XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH50N60B3D1
IC110
135ns
O-247
IF110
062in.
50N60B3D1
IXXH50N60B3D1
18A100
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MMIX1X200N60B3H1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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10-30kHz
IC110
IF110
MMIX1X200N60B3H1
110ns
MMIX1X200N60B3
MMIX1X200N60B3H1
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGR72N60B3H1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings
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IXGR72N60B3H1
IC110
247TM
IF110
72N60B3
02-10-09-D
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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MMIX1X200N60B3H1
IC110
110ns
10-30kHz
IF110
MMIX1X200N60B3
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PDF
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72N60A3
Abstract: IXGR72N60A3H1 IF110 ISOPLUS247
Text: Advance Technical Information IXGR72N60A3H1 GenX3TM 600V IGBT w/Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 52A 1.35V 250ns Ultra-Low Vsat PT IGBT for up to 5kHz Switching Symbol Test Conditions Maximum Ratings
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IXGR72N60A3H1
IC110
250ns
IF110
72N60A3
04-23-09-C
IXGR72N60A3H1
IF110
ISOPLUS247
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXGR72N60C3 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = £ = 600V 35A 2.7V 55ns High-Speed Low-Vsat PT IGBT 40-100 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES
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IXGR72N60C3
IC110
247TM
72N60C3
11-25-09-C
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 600V IGBT w/Diode IXGR72N60A3H1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 52A 1.35V 250ns Ultra-Low Vsat PT IGBT for up to 5kHz Switching Symbol Test Conditions Maximum Ratings
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IXGR72N60A3H1
IC110
250ns
247TM
72N60A3
04-23-09-C
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IXGR60N60C3C1
Abstract: G60N60 60N60C3 IF110 ISOPLUS247
Text: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES
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IXGR60N60C3C1
IC110
40-100kHz
247TM
IF110
60N60C3C1
IXGR60N60C3C1
G60N60
60N60C3
IF110
ISOPLUS247
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