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    IGBT 5SNG Search Results

    IGBT 5SNG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 5SNG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    cosmic

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-02 Nov 10 • Ultra low loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability


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    0150P450300 CH-5600 cosmic PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1426-02 01-2014 5SNG 0250P330305 HiPak IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


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    0250P330305 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 • Ultra low loss, rugged SPT+ chip-set  Smooth switching SPT+ chip-set for good EMC  High insulation package  AlSiC base-plate for high power cycling capability


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    0150P450300 CH-5600 PDF

    igbt 5SNG

    Abstract: 5SNG 0250P330305 5SNG0250P330305
    Text: Data Sheet, Doc. No. 5SYA 1426-01 06-2012 5SNG 0250P330305 HiPak IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


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    0250P330305 CH-5600 0250P330305 igbt 5SNG 5SNG 0250P330305 5SNG0250P330305 PDF

    5SNG 0250P330300

    Abstract: igbt 5SNG D-T2500
    Text: VCE IC = = 3300 V 250 A ABB HiPakTM IGBT Module 5SNG 0250P330300 Doc. No. 5SYA 1406-00 Aug 10 • Ultra low loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability


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    0250P330300 CH-5600 5SNG 0250P330300 igbt 5SNG D-T2500 PDF

    igbt 5SNG

    Abstract: IC 7400 configuration 5SNG0150P450300 5SNG 0150P450300
    Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-02 Sep 09 • Ultra low loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability


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    0150P450300 CH-5600 igbt 5SNG IC 7400 configuration 5SNG0150P450300 5SNG 0150P450300 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 •    Ultra low loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling


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    0150P450300 UL1557, E196689 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-03 04-2012 Ultra low loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal


    Original
    0150P450300 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1426-00 05-2012 5SNG 0250P330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


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    0250P330305 CH-5600 0250P330305 PDF

    5SYA2058

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1426-01 06-2012 5SNG 0250P330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


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    0250P330305 CH-5600 0250P330305 5SYA2058 PDF

    5SYA2042

    Abstract: 5SYA2043 5SNA-1500E330300 5SNA IGBT 6500 V diode 6.5 kv 5SZK9120 5SNA 1200E330100 5SNE 0800M170100
    Text: HiPak IGBT Modules with SPT & SPT + chips Setting new standards for SOA The HiPak™ modules are a family of highpower IGBTs in industry standard housings using the popular 190 x 140 mm, 130 x 140 mm and 140 x 70 mm footprints. They are available in three standard isolation voltages 4, 6 and


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    CH-5600 29palms 5SYA2042 5SYA2043 5SNA-1500E330300 5SNA IGBT 6500 V diode 6.5 kv 5SZK9120 5SNA 1200E330100 5SNE 0800M170100 PDF