74hc06
Abstract: TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A
Text: 目录 各种功率半导体器件和IGBT IGBT模块电路构成 IGBT模块的额定值和特性 IGBT模块的损耗和散热设计 IGBT模块的门极驱动 上桥臂的驱动 3相供电VVVF变频器系统框图 IGBT元件的短路和过电压保护 IGBT元件的过电压保护缓冲电路
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PHMB400B12
PDMB100B12C
1/2LiC21/2Cse2
600V1
200A1
200V800AIGBT3
100kWIGBT
200A1200V800A
74hc06
TLP250
IGBT 10KHz
IR2171
ptmb50e6c
igbt rcd
SCR 207A
50A 1200V SCR
SCR 100A 1200V
Equivalent for SCR 207A
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74hc06
Abstract: equivalent components for scr 207a SCR 207A 15KW igbt 200 A 1200 V TLP250 200V igbt 15KW igbt SCR 100A 1200V 0.75KW* LG IGBT
Text: 목차 각종 전력 소자와 IGBT 2 IGBT 모듈의 회로 구성 4 IGBT 모듈의 정격 및 특성 6 IGBT의 모듈 손실과 방열 10 IGBT 모듈의 게이트 구동 20 상부 구동 24 3상 브리지 인버터 26 단락 및 과전압 보호 30 스너버 회로
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100kW
74hc06
equivalent components for scr 207a
SCR 207A
15KW igbt 200 A 1200 V
TLP250
200V igbt
15KW igbt
SCR 100A 1200V
0.75KW* LG
IGBT
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LA 4825
Abstract: No abstract text available
Text: 目次 各種パワーデバイスとIGBT 2 IGBTモジュール回路構成 4 IGBTモジュール定格と特性 6 IGBTモジュール損失と放熱 10 IGBTモジュールのゲート ドライブ 20 ハイサイドのドライブ 24 3相ブリッジインバータ
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TLP250 MOSFET DRIVER application note
Abstract: TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase
Text: CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC’s IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3-Phase Bridge Inverter 26 Short circuit and Over-voltage Protection 30 Snubber 33 Parallel Operation
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00A/600V
00A/1200V
TLP250 MOSFET DRIVER application note
TLP250 MOSFET DRIVER
calculation of IGBT snubber
74hc06
tlp250 equivalent
TLP250 igbt driver applications
TLP250 application note
difference between IGBT and MOSFET IN inverter
SCR 207A
scr driver ic for rectifier 3 phase
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PM300CBS060
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM300CBS060 PM300CBS060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM300CBS060 FEATURE a Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process.
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PM300CBS060
PM300CBS060
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150CVA120 PM150CVA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150CVA120 FEATURE • 3φ 150A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic
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PM150CVA120
20kHz
E80276
E80271
910110CVA120
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E80276
Abstract: PM150RLA120
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C
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PM150RLA120
E80276
PM150RLA120
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E80276
Abstract: PM150RLA120 optocoupler PC 187
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C
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PM150RLA120
E80276
PM150RLA120
optocoupler PC 187
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30KW Inverter Diagram
Abstract: E80276 PM300CVA060 03N14
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM300CVA060 PM300CVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM300CVA060 FEATURE • 3φ 300A, 600V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic
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PM300CVA060
20kHz
E80276
E80271
30KW Inverter Diagram
PM300CVA060
03N14
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30KW Inverter Diagram
Abstract: PM300CLA060 IGBT 10 A Optocoupler PC 801
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM300CLA060
30KW Inverter Diagram
PM300CLA060
IGBT 10 A
Optocoupler PC 801
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30KW Inverter Diagram
Abstract: E80276 PM300CVA060 power inverter circuit diagram
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM300CVA060 PM300CVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM300CVA060 FEATURE • 3φ 300A, 600V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic
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PM300CVA060
20kHz
E80276
E80271
91GENT
30KW Inverter Diagram
PM300CVA060
power inverter circuit diagram
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM300CLA060
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM300RLA060
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30KW Inverter Diagram
Abstract: PM300CLA060 E80276
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM300CLA060
30KW Inverter Diagram
PM300CLA060
E80276
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C
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30KW Inverter Diagram
Abstract: PM150CVA120 "SINUSOIDAL PWM" E80276 pm150cva12
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150CVA120 PM150CVA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150CVA120 FEATURE • 3φ 150A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic
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PM150CVA120
20kHz
E80276
E80271
30KW Inverter Diagram
PM150CVA120
"SINUSOIDAL PWM"
pm150cva12
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PM300RLA060
Abstract: 30KW Inverter Diagram
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM300RLA060
PM300RLA060
30KW Inverter Diagram
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E80276
Abstract: PM150CVA120 sinusoidal pwm
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150CVA120 PM150CVA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150CVA120 FEATURE • 3φ 150A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic
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PM150CVA120
20kHz
E80276
E80271
PM150CVA120
sinusoidal pwm
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PM300RLA060
Abstract: E80276
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM300RLA060
PM300RLA060
E80276
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM300CVA060 PM300CVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM300CVA060 FEATURE • 3φ 300A, 600V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic
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PM300CVA060
20kHz
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM300RLA060
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM300CLA060
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PM300CSD060
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM300CSD060 PM300CSD060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM300CSD060 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM300CSD060
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30KW Inverter Diagram
Abstract: PM150RSD120
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150RSD120 PM150RSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150RSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM150RSD120
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30KW Inverter Diagram
PM150RSD120
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