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    IGBT 2MBI75U4A-120 FUJI Search Results

    IGBT 2MBI75U4A-120 FUJI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

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    2MBI75U4A-120

    Abstract: 2mbi75u4a120 IGBT 2MBI75U4A-120 FUJI 2MBI75U4A ED-4701 MT5F12959
    Text: SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI75U4A-120 Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki MS5F 6060 MS5F6060 1 a 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment May.-31 -’06


    Original     		PDF 2MBI75U4A-120 MS5F6060 H04-004-07b P8/13) H04-004-06b H04-004-03a 2MBI75U4A-120 2mbi75u4a120 IGBT 2MBI75U4A-120 FUJI 2MBI75U4A ED-4701 MT5F12959