IGBT 200 A Search Results

Full-bridge forward inverter

Abstract: SCR gate Control IC SCR 100A
Contextual Info: QIA0620004 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 7-Pack IGBT Module 200 Amperes / 600 Volts Description: Powerex 7-Pack IGBT power module is configured as a full-bridge inverter with an additional IGBT switch and an additional SCR. The Aluminum Silicon

E78996 datasheet bridge

Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF
Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

E78996 diode

Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: International I , i • I M R Rectifier PD -5.058B p r e l im in a r y "HALF-BRIDGE" IGBT INT-A-PAK GA 200 T S 60 U Ultra-Fast Speed IGBT Feat ures V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

SCR 100A

Abstract: SCR gate Control IC Full-bridge forward inverter scr inverter SCR Gate Drive turn off SCR 600V GE SCR SCR 50A SCR Inverter datasheet GE power SCR datasheet
Contextual Info: QIA0620004 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com 7-Pack IGBT Module 200 Amperes / 600 Volts Description: Powerex 7-Pack IGBT power module is configured as a full-bridge inverter with an additional IGBT switch and an

Full-bridge inverter

Abstract: SCR gate Control IC scr dc motor forward reverse control SCR 100A
Contextual Info: QIA0620004 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com 7-Pack IGBT Module 200 Amperes / 600 Volts Description: Powerex 7-Pack IGBT power module is configured as a full-bridge inverter with an additional IGBT switch and an

igbt control servo motor

Contextual Info: QIR0620001 Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 724 925-7272 www.pwrx.com IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT

Contextual Info: International lORRectifi G f PD - 5.047B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA250TS60U Ultra-Fast Speed IGBT Features V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200

DIODE i2t

Abstract: QIQ0645001 48025f
Contextual Info: QIQ0645001 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy

Contextual Info: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package

VS-GA200HS60S1PBF

Contextual Info: VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half-Bridge IGBT Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package

Contextual Info: International TOR Rectifier PD -5.048 PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces - 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package

E78996

Abstract: GA200HS60S1PBF E78996 datasheet bridge GA200HS60S1 tig welding machine tig welding 30EPH06 e78996 italy tig welding half bridge
Contextual Info: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package

GA400TD60U

Contextual Info: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Feature Featuress VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

GA150TS60U

Abstract: 150TS60U
Contextual Info: International 3BSR Rectifi6r preliminary "HALF-BRIDGE" IGBT INT-A-PAK PD'5056 G A 150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

GA100TS120UPBF

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK UltrafastTM Speed IGBT FEATURES • Generation 4 IGBT technology 3 • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode 6 7

GA100TS120U

Contextual Info: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

irf p 1806

Contextual Info: International Rectifier IÖR PD - 5.059B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-Fast Speed IGBT Featu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

iu728

Contextual Info: International ISgR Rectifier preliminary "HALF-BRIDGE" IGBT INT-A-PAK PD'5047A GA250TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V c e s = 60 0V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

GA100TS120U

Abstract: 18672
Contextual Info: PD - 5.060 PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: International IQ R Rectifier PD - 5.047B PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK GA250TS60U Ultra-Fast Speed IGBT Fe at ur es • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

GA200TD120U

Contextual Info: PD - 50061D GA200TD120U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses