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    IGBT, PASSIVATION Search Results

    IGBT, PASSIVATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
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    IGBT, PASSIVATION Price and Stock

    TE Connectivity 2363928-1

    Passive Components, Antennas
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2363928-1 25,000
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    • 100 -
    • 1000 $0.079
    • 10000 $0.077
    		Buy Now

    CTS Corporation CB3-3I-24M5760

    Oscillator - XO (Standard) - 24.576 MHz - Enable/Disable Function - HCMOS, TTL Output - ±50ppm Frequency Stability - 5V Supply - 4-SMD, No Lead.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CB3-3I-24M5760 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.907
    • 10000 $0.661
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    CTS Corporation CB3-3I-24M576000

    Oscillator - XO (Standard) - 24.576 MHz - Enable/Disable Function - HCMOS, TTL Output - ±50ppm Frequency Stability - 5V Supply - 4-SMD, No Lead.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CB3-3I-24M576000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.907
    • 10000 $0.661
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    Abracon Corporation ABM8-227-14.7456MHZ-T

    Passive Components, Crystals
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com ABM8-227-14.7456MHZ-T 1,000
    • 1 -
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    • 100 $0.423
    • 1000 $0.423
    • 10000 $0.369
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    Taoglas Antenna Solutions SGP.1575.18.4.E.02

    Passive Components, Antennas
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SGP.1575.18.4.E.02 756
    • 1 -
    • 10 $6.13
    • 100 $6.13
    • 1000 $5.42
    • 10000 $5.21
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    Find more IGBT, PASSIVATION price and stock on Findchips.com

    IGBT, PASSIVATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT120GR120D APT120GR120D 1200V, 120A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT Die The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and


    Original     		PDF APT120GR120D

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1323-02 11 02 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12K1721 CH-5600 12K1721

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1695-01 08 13 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12M1730 CH-5600

    5SMY 12J1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-02 11 02 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12J1721 CH-5600 12J1721 5SMY 12J1721

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-02 11 02 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12G1721 CH-5600 12G1721

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1318-01 11 06 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: alpha-Si and Silicon Nitride plus Polyimide Maximum rated values Parameter


    Original     		PDF 12M1721 CH-5600

    169800

    Abstract: 12M6501
    Text: Data Sheet, Doc. No. 5SYA 1698-00 12 08 5SMY 12M6501 IGBT-Die VCE = 6500 V IC = 31 A Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M6501 CH-5600 169800

    12M1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-02 11 02 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12M1721 CH-5600 12M1721

    5SMY 12J1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12J1721 CH-5600 5SMY 12J1721

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12K1721 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-01 12 01 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12G1721 CH-5600

    5SMY 86G1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-03 04 14 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12G1721 CH-5600 5SMY 86G1721

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-01 12 01 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M1721 CH-5600

    5SMY 86M1730

    Abstract: ac130
    Text: Data Sheet, Doc. No. 5SYA 1695-03 04 14 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M1730 CH-5600 5SMY 86M1730 ac130

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-03 04 14 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M1721 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-03 04 14 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12J1721 CH-5600

    12K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12K1280 CH-5600 12K1280

    132102

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12J1280 CH-5600 132102

    12M1280

    Abstract: 5SMY12M1280
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12M1280 CH-5600 12M1280 5SMY12M1280

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12J1280 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12M1280 CH-5600

    abb press-pack igbt

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4501 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride


    Original     		PDF 12N4501 CH-5600 abb press-pack igbt

    76K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12K1280 CH-5600 76K1280

    MJ86

    Abstract: 57 A
    Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12H1280 CH-5600 MJ86 57 A