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    IFRP450 MOSFET Search Results

    IFRP450 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IFRP450 MOSFET Datasheets Context Search

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    IFRP450

    Abstract: application IRFP450 IGBT loss calculate igbt 500V 2A irfp460 igbt IRFP450 MOSFET datasheet irfp450 mosfet 5A IGBT snubber resistance of IGBT datasheet irfp460 igbt
    Text: Index DT 93-3 500V IGBTS REPLACE MOSFETS AT LOWER COST by Laszlo Kiraly Introduction: Design Example: International Rectifier's 500V IGBTs have switching characteristics that are very close to those of power MOSFETs, without sacrificing the superior conduction characteristics of IGBTs. They offer


    Original
    IRFP450 50kHz AN-990, AN-983A 50ns/div. IRGP430 IRFP450, IRGP430U 100ns/div IFRP450 application IRFP450 IGBT loss calculate igbt 500V 2A irfp460 igbt IRFP450 MOSFET datasheet irfp450 mosfet 5A IGBT snubber resistance of IGBT datasheet irfp460 igbt PDF