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    Spectrum Control SCIF-9120-101

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    Intersil Corporation IF9120

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    IF9120 Datasheets Context Search

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    IF9120

    Abstract: IRFR9120 IRFR91209A IRFU9120 kp158 623E3 4411E
    Text: IRFU9120, IRFR9120 S E M I C O N D U C T O R 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package • 5.6A, 100V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.600Ω • Temperature Compensating PSPICE Model


    Original     		PDF IRFU9120, IRFR9120 O-251AA IRFU9120 IRFR9120 235e-12 1e-30 01e-3 05e-6) IF9120 IRFR91209A kp158 623E3 4411E

    IF9120

    Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334
    Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field


    Original     		PDF IRFR9120, IRFU9120 TA17501. IF9120 TA17501 IRFR9120 IRFR91209A IRFU9120 TB334

    IF9120

    Abstract: IRFR9120 irfu9120 IRFR91209A TB334 4411E
    Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs January 2002 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are


    Original     		PDF IRFR9120, IRFU9120 TA17501. IF9120 IRFR9120 irfu9120 IRFR91209A TB334 4411E

    4411E

    Abstract: IF9120
    Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs July 1999 3987.4 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are


    Original     		PDF IRFR9120, IRFU9120 TA17501. 4411E IF9120

    IF9120

    Abstract: No abstract text available
    Text: IRFR9120, IRFU9120 H A R R IS X Semiconductor 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Description Features 5.6 A, 100 V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava­


    OCR Scan     		PDF IRFR9120, IRFU9120 600S2 84e-4 83e-6) 235e-12 1e-30 01e-3 05e-6) IF9120

    IRFR9120

    Abstract: p-channel pspice model IF9120 TA17501 123E5
    Text: IRFU9120, IRFR9120 & 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package JEDEC T 0-25 1 A A • 5.6A, 100V SOURCE • r DS ON = 0.600Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    OCR Scan     		PDF IRFR9120 IRFU9120 IRFR9120 1e-30 05e-6) 23o-3 23e-5) 05e-3 35e-5) p-channel pspice model IF9120 TA17501 123E5

    if9120

    Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334 623E3 irfr9120 harris
    Text: I R Semiconductor F I R R F 9 U 1 9 2 1 2 , 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 5.6A, 100V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava­


    OCR Scan     		PDF IRFR9120, IRFU9120 600S2 TB334 IRFR9120 O-252AA IF9120 IRFU9120 O-251 if9120 TA17501 IRFR91209A TB334 623E3 irfr9120 harris